Deposition of a-C:H films on UHMWPE substrate and its wear-resistanceDONG XIE; HENGJUN LIU; XINGRUI DENG et al.Applied surface science. 2009, Vol 256, Num 1, pp 284-288, issn 0169-4332, 5 p.Article

Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor depositionGUANGWEI GUO; GUANGZE TANG; YAJUN WANG et al.Applied surface science. 2011, Vol 257, Num 10, pp 4738-4742, issn 0169-4332, 5 p.Article

The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVAPENG WANG; XIA WANG; YOUMING CHEN et al.Applied surface science. 2007, Vol 253, Num 7, pp 3722-3726, issn 0169-4332, 5 p.Article

The effect of direct current bias on the characteristics of Cu/C:H composite thin films on poly ethylene terephthalate film prepared by electron cyclotron resonance-metal organic chemical vapor depositionBUP JU JEON; KO, Hyungduk; HYUN, Jin et al.Thin solid films. 2006, Vol 496, Num 2, pp 395-401, issn 0040-6090, 7 p.Article

Radiation-induced release of hydrogen from C:H films: basic regularities and mechanismTRAKHTENBERG, I. S; RUBSHTEIN, A. P; LEVIN, A. D et al.Diamond and related materials. 1999, Vol 8, Num 12, pp 2164-2168, issn 0925-9635Article

A study of the mobility and trapping of minor hydrogen concentrations in diamond in three dimensions using quantitative ERDA microscopyCONNELL, S. H; SELLSCHOP, J. P. F; BUTLER, J. E et al.Diamond and related materials. 1998, Vol 7, Num 11-12, pp 1714-1718, issn 0925-9635Article

Deposition of DLC films in CH₄/Ar and CH₄/Xe r.f. plasmasMUTSUKURA, N; YOSHIDA, K.-I.Diamond and related materials. 1996, Vol 5, Num 9, pp 919-922, issn 0925-9635Article

Elastic recoil detection analysis for hydrogen near the surface of chemical-vapor-deposited diamondYAGI, H; TANIDA, K; NISHIMURA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 5A, pp L577-L579, issn 0021-4922, 2Article

A surface reaction with atoms : hydrogenation of sp- and sp²-hybridized carbon by thermal H(D) atomsBIENER, J; SCHUBERT, U. A; SCHENK, A et al.The Journal of chemical physics. 1993, Vol 99, Num 4, pp 3125-3128, issn 0021-9606Article

Hydrogen diffusion and stability in polycrystalline CVD undoped diamondBALLUTAUD, D; JOMARD, F; THEYS, B et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 405-410, issn 0925-9635Conference Paper

NEXAFS characterization of nanostructured carbon thin-films exposed to hydrogenLENARDI, C; BARBORINI, E; BRIOIS, V et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 1195-1200, issn 0925-9635Conference Paper

From tribological coatings to low-κ dielectrics for ULSI interconnectsGRILL, A.Thin solid films. 2001, Vol 398-99, Num 1, pp 527-532, issn 0040-6090Conference Paper

Hall effect measurement and band bending calculation of hydrogenated diamond film grown by chemical vapor depositionSHIRAKAWA, Y; ANDA, Y; MAKI, T et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3414-3417, issn 0021-4922, 1Article

Study of hydrogen in DLC film by ERDA with ⁵⁸Ni ionsAVASTHI, D. K; KABIRAJ, D; MEHTA, J et al.Vacuum. 1995, Vol 46, Num 7, pp 633-636, issn 0042-207XArticle

Morphology, conductivity, and pseudodoping in amorphous and amorphous-crystalline C:H filmsDANCHENKOV, A. A; LIGACHEV, V. A; POPOV, A. I et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 8, pp 683-686, issn 1063-7826Article

Composite Ag/C:H films prepared by DC planar magnetron depositionBOLDYRYEVA, Hanna; HLIDEK, Pavel; BIEDERMAN, Hynek et al.Thin solid films. 2003, Vol 442, Num 1-2, pp 86-92, issn 0040-6090, 7 p.Conference Paper

A tight-binding molecular dynamics study of vibrational spectra of H-covered diamond (100) surfacesSMIRNOV, K. S; RASEEV, G.Surface science. 2000, Vol 459, Num 1-2, pp 124-134, issn 0039-6028Article

Depth profiles of boron and hydrogen in boron-doped diamond films and related performance characteristicsLIAO, C; WANG, Y; YANG, S et al.Diamond and related materials. 1999, Vol 8, Num 7, pp 1229-1233, issn 0925-9635Article

NEA peak of the differently terminated and oriented diamond surfacesDIEDERICH, L; AEBI, P; KÜTTEL, O. M et al.Surface science. 1999, Vol 424, Num 2-3, pp L314-L320, issn 0039-6028Article

Hydrogen incorporation control in high quality homoepitaxial diamond (111) growthSAKAGUCHI, I; NISHITANI-GAMO, M; KIAN PING LOH et al.Diamond and related materials. 1999, Vol 8, Num 7, pp 1291-1295, issn 0925-9635Conference Paper

Determination of parameter error area in ellipsometry of superthin and 'little contrasting' layersTOLMACHEV, V. A.Optics communications. 1998, Vol 153, Num 1-3, pp 39-44, issn 0030-4018Article

Calculation of migration barriers on hydrogenated diamond surfacesGALI, A; MESZAROS, A; DEAK, P et al.Diamond and related materials. 1996, Vol 5, Num 6-8, pp 613-616, issn 0925-9635Conference Paper

The nature of the state of hydrogen on the surface and in the bulk of natural and synthetic diamond (using ion beam techniques)SELLSCHOP, J. P. F; CONNELL, S. H; MADIBA, C. C. P et al.Vacuum. 1994, Vol 45, Num 4, pp 397-402, issn 0042-207XConference Paper

HREEL spectroscopy of thin ion beam deposited C:H(D) filmsBIENER, J; SCHENK, A; WINTER, B et al.Journal of electron spectroscopy and related phenomena. 1993, Vol 64-65, pp 331-339, issn 0368-2048Conference Paper

Hydrogenated polycrystalline diamond films: Elastic and inelastic electron reflectivityAZRIA, R; LAFOSSE, A; AMIAUD, L et al.Progress in surface science. 2011, Vol 86, Num 5-8, pp 94-114, issn 0079-6816, 21 p.Article