Mercury cadmium telluride characterization. International workshopSEILER, David G.Semiconductor science and technology. 1993, Vol 8, Num 6S, issn 0268-1242, 206 p.Conference Proceedings

Indirect tunneling capacitance of the p-n junction for narrow band-gap semiconductorsLIN HE; TANG DINGYUAN.Chinese physics. 1988, Vol 8, Num 4, pp 1116-1126, issn 0273-429X, 11 p.Article

Excess currents in narrow gap CdxHg1-xTe p-n junctionsBAZHENOV, N. L; GASANOV, S. I; IVANOV-OMSKII, V. I et al.Infrared physics. 1993, Vol 34, Num 1, pp 37-41, issn 0020-0891Article

Ellipsometric profiling of HgCdTe heterostructuresMCLEVIGE, W. V; ARIAS, J. M; EDWALL, D. D et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2483-2486, issn 0734-211XArticle

Deep antisite-complex levels in Hg_1-xCd_xTeHANKE, M; HENNIG, D; KASCHTE, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 5, pp 1148-1151, issn 0734-211XArticle

Present status and future of theoretical work on point defects and diffusion in semiconductorsMORGAN-POND, C. G.Journal of electronic materials. 1991, Vol 20, Num 6, pp 399-408, issn 0361-5235Conference Paper

Mercury diffusion in Hg_1-xCd_xTeARCHER, N; PALFREY, H.Journal of electronic materials. 1991, Vol 20, Num 6, pp 419-424, issn 0361-5235Conference Paper

TWO-DIMENSIONAL EFFECTS IN INTRINSIC PHOTOCONDUCTIVE INFRARED DETECTORSKOLODNY A; KIDRON I.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 1; PP. 9-22; BIBL. 18 REF.Article

An x-ray photoelectron spectroscopie study of chemical etching and chemo-mechanical polishing of HgCdTeCHANG, W. H; LEE, T; LAU, W. M et al.Journal of applied physics. 1990, Vol 68, Num 9, pp 4816-4819, issn 0021-8979Article

HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxyARIAS, J. M; ZANDIAN, M; WILLIAMS, G. M et al.Journal of applied physics. 1991, Vol 70, Num 8, pp 4620-4622, issn 0021-8979Article

Haynes-Shockley experiment on n-type HgCdTeSHACHAM-DIAMAND, Y; KIDRON, I.Journal of applied physics. 1984, Vol 56, Num 4, pp 1104-1108, issn 0021-8979Article

An experimental study of nonlinear effects in room temperature HgCdTe thermal optical bistability: increasing absorption and self-defocusingCOPPO, P. M; CECCHI, S; SALIERI, P et al.Optics communications. 1990, Vol 75, Num 3-4, pp 332-338, issn 0030-4018Article

Metal-semiconductor-metal (MSM) photodetectors fabricated on MOCVD grown Hg_1-κCd_κTeLEECH, P. W; PETKOVIC, N; GWYNN, P. J et al.Electronics Letters. 1990, Vol 26, Num 22, pp 1848-1849, issn 0013-5194Article

Device quality Hg_1-xCd_xTe material by low-temperature precracking metalorganic chemical vapor depositionLU, P.-Y; WILLIAMS, L. M; CHU, S. N. G et al.Applied physics letters. 1989, Vol 54, Num 20, pp 2021-2022, issn 0003-6951Article

Particularités du spectre des semiconducteurs déformés uniaxialement ayant des bandes dégénérées dans un champ magnétique perpendiculaire à la pressionRUMYANTSEV, E. L; RUT, O. EH.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 8, pp 1341-1347, issn 0015-3222Article

Temperature measurement in a THM solution zone for the growth of Hg_1-xCd_xTeKIESSLING, F. M; GILLE, P.Crystal research and technology (1979). 1990, Vol 25, Num 11, pp 1359-1364, issn 0232-1300, 6 p.Article

Atomic migration and surface evaporation of Hg in Hg_1-xCd_xTe crystals observed by 40-MeV O⁵⁺ ion backscattering methodTAKITA, K; IPPOSHI, T; MURAKAMI, K et al.Journal of applied physics. 1986, Vol 59, Num 5, pp 1500-1503, issn 0021-8979Article

Fast and slow surface electrons in HgCdTeEMTAGE, P. R; TEMOFONTE, T. A; NOREIKA, A. J et al.Applied physics letters. 1989, Vol 54, Num 20, pp 2015-2017, issn 0003-6951Article

Process modeling of point defect effects in Hg_1-xCd_xTeMELENDEZ, J. L; HELMS, C. R.Journal of electronic materials. 1993, Vol 22, Num 8, pp 999-1004, issn 0361-5235Conference Paper