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FIELD INDUCED TUNNELING IN HG1-XCDXTE PHOTODIODESANDERSON WW.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1080-1082; BIBL. 13 REF.Article

COMPLEX BAND STRUCTURE AND SUPERLATTICE ELECTRONIC STATESSCHULMAN JN; MCGILL TC.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4149-4155; BIBL. 14 REF.Article

OSCILLATIONS IN SCATTERED 4HE+ ION YIELD CURVES FROM HGCDTEBAUN WL.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 100; NO 3; PP. L491-L494; BIBL. 8 REF.Article

PARTICULARITES DE L'ABSORPTION DANS LA REGION DE LA LIMITE DE LA BANDE FONDAMENTALE DANS CDXHG1-XTE A BANDE INTERDITE ETROITESAGINOV LD; PONOMARENKO VP; FEDIRKO VA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 3; PP. 470-473; BIBL. 12 REF.Article

RECOMBINAISON RADIATIVE DUE AUX IMPURETES DANS CDXHG1-XTE NGEL'MONT BL; IVANOV OMSKIJ VI; MAL'TSEVA VA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 6; PP. 1109-1115; BIBL. 13 REF.Article

CALCULATION OF THE AUGER LIFETIME IN P-TYPE HG1-XCDXTECASSELMAN TN.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 848-854; BIBL. 20 REF.Article

NEAR-BAND-GAP PHOTOLUMINESCENCE OF HG1-XCDXTEHUNTER AT; SMITH DL; MCGILL TC et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 200-203; BIBL. 8 REF.Article

PLASMA ANODIZATION OF HG1-XCDXTENEMITROVSKY Y; GOSHEN R.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 9; PP. 813-815; BIBL. 11 REF.Article

PLASTIC BENDING OF CDXHG1-XTECOLE S.1980; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1980; VOL. 15; NO 10; PP. 2591-2596; BIBL. 20 REF.Article

LARGE OPTICAL NONLINEARITIES AND CW DEGENERATE FOUR-WAVE MIXING IN HGCDTEJAIN RK; STEEL DG.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 1; PP. 72-77; BIBL. 27 REF.Article

LOW TEMPERATURE METAL SATURATION OF HG1-XCDXTE(S)CHING HUA SU; POK KAI LIAO; BREBRICK RF et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 5; PP. 931-942; BIBL. 14 REF.Article

QUANTUM EFFICIENCY OF INTERNAL PHOTOEFFECTS IN NARROW-GAP SEMICONDUCTORS: A MODELSCHAROCH P; SZATKOWSKI J.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5710-5714; BIBL. 10 REF.Article

TWO-ELECTRON CONDUCTION IN N-TYPE HG1-XCDXTEFINKMAN E; MEMIROVSKY Y.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1052-1058; BIBL. 28 REF.Article

PHOTOCONDUCTIVITE DE CD0,2)HG0,8)TE DANS L'INTERVALLE DE LONGUEUR D'ONDE 10-150 MU M AUX TEMPERATURES 4,2 A 40 KSAGINOV LD; STAFEEV VI; FEDIRKO VA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 4; PP. 710-711; BIBL. 1 REF.Article

DIFFUSION OF INDIUM IN HG1-XCDXTEMARGALIT S; NEMIROVSKY Y.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 6; PP. 1406-1408; BIBL. 9 REF.Article

ELIMINATING LOW-FREQUENCY 1/F NOISE IN HGCDTE BY SPUTTERINGZHENG K; KUANG HANN DUH; VAN DER ZIEL A et al.1983; PHYSICA. B + C; ISSN 511463; NLD; DA. 1983; VOL. 119; NO 3; PP. 249-251; BIBL. 3 REF.Article

INFRARED ABSORPTION SPECTRA OF CD0.2HG0.8TE CRYSTALSGURAUSKAS E; KAVALIAUSKAS J; KRIVAITE G et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 195-202; ABS. RUS; BIBL. 28 REF.Article

NON-LINEAR REFRACTIVE INDEX CHANGES IN CDHGTE AT 175 K WITH 10.6 MU M RADIATIONHILL JR; PARRY G; MILLER A et al.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 2; PP. 151-156; BIBL. 16 REF.Article

OBSERVATION OF DEEP LEVELS IN HG1-XCDXTE WITH OPTICAL MODULATION SPECTROSCOPYPOLLA DL; AGGARWAL RL; MROCZKOWSKI JA et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 338-340; BIBL. 14 REF.Article

MEASUREMENT OF SPACE CHARGE GENERATION-RECOMBINATION CURRENT IN HG1-XCDXTE PHOTODIODES BY DEEP LEVEL TRANSIENT SPECTROSCOPYPOLLA DL; REINE MB; SOOD AK et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 719-723; BIBL. 15 REF.Article

THE KIRKENDALL AND FRENKEL EFFECTS IN HG1-ALPHA CDXTEIVANOV OMSKII VI; MIRONOV KE; OGORODNIKOV VK et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 1; PP. 37-41; ABS. RUS; BIBL. 7 REF.Article

ETUDE DU TRANSFERT DU CADMIUM LORS DE LA CROISSANCE DE COUCHES EPITAXIQUES DE CDXHG1-XTEBOVINA LA; ZAITOV FA; MESHCHERYAKOVA VP et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 22; PP. 8-11; BIBL. 1 REF.Article

STRUCTURE DES CRISTAUX DES SOLUTIONS SOLIDES CDXHG1-XTE OBTENU A PARTIR DE L'ETAT FONDUVOJNYKH NM; SOKOLOV AM; INDENBAUM GV et al.1974; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1974; NO 5; PP. 240-242; BIBL. 6 REF.Article

Bipolar transistor action in cadmium mercury tellurideASHLEY, T; CRIMES, G; ELLIOTT, C. T et al.Electronics Letters. 1986, Vol 22, Num 11, pp 611-613, issn 0013-5194Article

EVIDENCE OF STRESS-MEDIATED HG MIGRATION IN HG1-XCDXTERACCAH PM; LEE U; SILBERMAN JA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 374-376; BIBL. 10 REF.Article

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