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OXIDATION OF HG1-XCDXTE STUDIED WITH SURFACE SENSITIVE TECHNIQUESMORGEN P; SILBERMAN JA; LINDAU I et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 597-610; BIBL. 20 REF.Article

FIELD INDUCED TUNNELING IN HG1-XCDXTE PHOTODIODESANDERSON WW.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1080-1082; BIBL. 13 REF.Article

ULTIMATE IR HORIZON SENSORJAIN YK; ALEX TK; KALAKRISHNAN B et al.1980; I.E.E.E. TRANS. AEROSPACE ELECTRON. SYST.; USA; DA. 1980; VOL. 16; NO 2; PP. 233-237; BIBL. 7 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES ET DE RECOMBINAISON D'UN PHOTOMELANGEUR A BASE DE CDHGTELILENKO YU V.1980; IZV. VYSS. UCEBN. ZAVED., FIZ.; ISSN 0021-3411; SUN; DA. 1980; VOL. 23; NO 7; PP. 100-103; BIBL. 7 REF.Article

MACLAGE DANS LES CRISTAUX DE CDTE ET CDXHG1-XTEKURILO IV; KUCHMA VI.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 4; PP. 569-572; BIBL. 3 REF.Article

INTERDIFFUSION IN DOPED SEMICONDUCTOR ALLOYS HGWCD1-WTELEUTE V; SCHMIDTKE HM; STRATMANN W et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. 183-192; ABS. GER; BIBL. 23 REF.Article

OPTICAL PHASE CONJUGATION IN HGL-XCDXTEKHAN MA; KRUSE PW; READY JF et al.1980; OPT. LETTERS; USA; DA. 1980; VOL. 5; NO 6; PP. 261-263; BIBL. 15 REF.Article

INFLUENCE DE L'ETALEMENT GAUSSIEN SUR LE SPECTRE DE PHOTOCONDUCTIVITE DE CDXHG1-XTEVISHNYAKOV EM; KURBANOV KR; YAKIMENKO AD et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 6; PP. 991-993; BIBL. 3 REF.Article

ADMITTANCE SPECTROSCOPY OF DEEP LEVELS IN HG1-XCDXTEPOLLA DL; JONES CE.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6233-6237; BIBL. 18 REF.Article

SPUTTERING OF CDXHG1-XTE FILMS IN MERCURY VAPOUR PLASMAZOZIME A; SELLA C; COHEN SOLAL G et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 2; PP. 373-378; BIBL. 2 REF.Serial Issue

COMPLEX BAND STRUCTURE AND SUPERLATTICE ELECTRONIC STATESSCHULMAN JN; MCGILL TC.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4149-4155; BIBL. 14 REF.Article

OSCILLATIONS IN SCATTERED 4HE+ ION YIELD CURVES FROM HGCDTEBAUN WL.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 100; NO 3; PP. L491-L494; BIBL. 8 REF.Article

PARTICULARITES DE L'ABSORPTION DANS LA REGION DE LA LIMITE DE LA BANDE FONDAMENTALE DANS CDXHG1-XTE A BANDE INTERDITE ETROITESAGINOV LD; PONOMARENKO VP; FEDIRKO VA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 3; PP. 470-473; BIBL. 12 REF.Article

RECOMBINAISON RADIATIVE DUE AUX IMPURETES DANS CDXHG1-XTE NGEL'MONT BL; IVANOV OMSKIJ VI; MAL'TSEVA VA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 6; PP. 1109-1115; BIBL. 13 REF.Article

CALCULATION OF THE AUGER LIFETIME IN P-TYPE HG1-XCDXTECASSELMAN TN.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 848-854; BIBL. 20 REF.Article

NEAR-BAND-GAP PHOTOLUMINESCENCE OF HG1-XCDXTEHUNTER AT; SMITH DL; MCGILL TC et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 200-203; BIBL. 8 REF.Article

PLASMA ANODIZATION OF HG1-XCDXTENEMITROVSKY Y; GOSHEN R.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 9; PP. 813-815; BIBL. 11 REF.Article

PLASTIC BENDING OF CDXHG1-XTECOLE S.1980; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1980; VOL. 15; NO 10; PP. 2591-2596; BIBL. 20 REF.Article

LARGE OPTICAL NONLINEARITIES AND CW DEGENERATE FOUR-WAVE MIXING IN HGCDTEJAIN RK; STEEL DG.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 1; PP. 72-77; BIBL. 27 REF.Article

LOW TEMPERATURE METAL SATURATION OF HG1-XCDXTE(S)CHING HUA SU; POK KAI LIAO; BREBRICK RF et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 5; PP. 931-942; BIBL. 14 REF.Article

QUANTUM EFFICIENCY OF INTERNAL PHOTOEFFECTS IN NARROW-GAP SEMICONDUCTORS: A MODELSCHAROCH P; SZATKOWSKI J.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5710-5714; BIBL. 10 REF.Article

TWO-ELECTRON CONDUCTION IN N-TYPE HG1-XCDXTEFINKMAN E; MEMIROVSKY Y.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1052-1058; BIBL. 28 REF.Article

PHOTOCONDUCTIVITE DE CD0,2)HG0,8)TE DANS L'INTERVALLE DE LONGUEUR D'ONDE 10-150 MU M AUX TEMPERATURES 4,2 A 40 KSAGINOV LD; STAFEEV VI; FEDIRKO VA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 4; PP. 710-711; BIBL. 1 REF.Article

DIFFUSION OF INDIUM IN HG1-XCDXTEMARGALIT S; NEMIROVSKY Y.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 6; PP. 1406-1408; BIBL. 9 REF.Article

ELIMINATING LOW-FREQUENCY 1/F NOISE IN HGCDTE BY SPUTTERINGZHENG K; KUANG HANN DUH; VAN DER ZIEL A et al.1983; PHYSICA. B + C; ISSN 511463; NLD; DA. 1983; VOL. 119; NO 3; PP. 249-251; BIBL. 3 REF.Article

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