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BARRIER AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND TRANSPARENT CONDUCTING OXIDES AND ITS INFLUENCE ON SOLAR CELL PERFORMANCESANCHEZ SINENCIO F; WILLIAMS R.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2757-2760; BIBL. 9 REF.Article

FREE EXCITONS AT ROOM TEMPERATURE IN CADMIUM TELLURIDE: A PHOTOELECTROCHEMICAL EVIDENCELEMASSON P.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 8; PP. 627-631; BIBL. 14 REF.Article

COMMON ANION HETEROJUNCTIONS: CDTE-CDHGTEMIGLIORATO P; WHITE AM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 65-69; BIBL. 17 REF.Article

SURFACE PREPARATION EFFECTS ON EFFICIENT INDIUM-TIN-OXIDE-CDTE AND CDS-CDTE HETEROJUNCTION SOLAR CELLSWERTHEN JG; FAHRENBRUCH AL; BUBE RH et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2750-2756; BIBL. 19 REF.Article

THERMODYNAMIC FUNCTIONS FOR THE CONGRUENT SUBLIMATION OF CADMIUM TELLURIDEDELARGY B; FINCH A; GARDNER PJ et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 2; PP. 194-198; BIBL. 28 REF.Article

PREDICTION OF NEGATIVE DIFFUSIVITY UNDER TRANSIENT REGIME CONDITIONSBOITTIAUX B; CONSTANT E; REGGIANI L et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 407-409; BIBL. 11 REF.Article

EMISSION PROPERTIES IN ELECTROLYTICALLY PREPARED CDTE P-N JUNCTIONSSALDANA XI; VAZQUEZ LOPEZ C; ZEHE A et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 5; PP. 433-434; BIBL. 10 REF.Article

GROWTH OF CDTE FILMS ON SAPPHIRE BY MOLECULAR BEAM EPITAXYMYERS TH; YAWCHENG LO; BICKNELL RN et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 247-248; BIBL. 8 REF.Article

SYSTEME CDTE-GD2TE3AGAEV AB; ZUL'FUGARLY DI; ALIEV OM et al.1983; ZURNAL NEORGANICESKOJ HIMII; ISSN 0044-457X; SUN; DA. 1983; VOL. 28; NO 1; PP. 256-258; BIBL. 4 REF.Article

COLLIMATION OF PORTABLE CADMIUM TELLURIDE DETECTORS FOR BIOTELEMETRYBOJSEN J; STABERG B; KOELENDORF K et al.1982; INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES; ISSN 0020-708X; USA; DA. 1982; VOL. 33; NO 12; PP. 1359-1363; BIBL. 13 REF.Article

PARTICULARITES DE LA DISTRIBUTION D'INTENSITE DES CHAMPS ELECTRIQUES DANS LES DETECTEURS A BASE DE STRUCTURES MSM (MDSDM) ENREGISTRANT UN RAYONNEMENTKASHERININOV PG.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 1888-1893; BIBL. 11 REF.Article

AN EVALUATION OF CDTE SURFACE BARRIER DIODES AS DETECTORS FOR ENERGETIC CHARGED PARTICLESRISTINEN RA; PETERSON RJ; HAMILL JJ et al.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 502936; NLD; DA. 1981; VOL. 188; NO 2; PP. 445-452; BIBL. 14 REF.Article

LASER-INDUCED DAMAGE MEASUREMENTS IN CDTE AND OTHER II-VI MATERIALSSOILEAU MJ; WILLIAMS WE; VAN STRYLAND EW et al.1982; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1982; VOL. 21; NO 22; PP. 4059-4062; BIBL. 22 REF.Article

ELECTROLYTE ELECTROREFLECTANCE STUDY OF LASER ANNEALING EFFECTS ON THE CDTE/HG0.8CD0.2TE(111) SYSTEMAMIRTHARAJ PM; POLLAK FH; WATERMAN JR et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 860-862; BIBL. 7 REF.Article

PARTICULARITES DE L'ABSORPTION D'IMPULSIONS DE LUMIERE DE L'ORDRE DE LA PICO-SECONDE PAR DES MONOCRISTAUX DE CDTEBALTRAMEYUNAS R; VAJTKUS YU; PYATRAUSKAS M et al.1982; OPTIKA I SPEKTROSKOPIJA; ISSN 0030-4034; SUN; DA. 1982; VOL. 53; NO 3; PP. 575-576; BIBL. 8 REF.Article

A METALLOGRAPHIC INVESTIGATION OF COMPOSITIONAL INHOMOGENEITIES IN HG1-XCDXTE WAFERSGOLDSTEIN M; HOROWITZ A; AMIT M et al.1982; METALLOGRAPHY; ISSN 0026-0800; USA; DA. 1982; VOL. 15; NO 3; PP. 323-329; BIBL. 8 REF.Article

ANISOTYPE MULTIHETEROJUNCTION EUTECTIC COMPOSITES: THE CDTE-GATE SYSTEMVAN HOOF LAH; ALBERS W.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3476-3479; BIBL. 17 REF.Article

ELECTROOPTIC GIGAHERTZ LIGHT-PIPE MODULATOR FOR CO2 LASER WAVELENGTHSCHOLTZ AL; LEED WR; BONEK E et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 6; PP. 1021-1029; BIBL. 20 REF.Article

ALPHA -PARTICLE POLARIZATION EFFECTS IN CADMIUM TELLURIDE RADIATION DETECTORSBILBE RM; NICHOLLS JE; LUNN B et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. 239-243; ABS. GER; BIBL. 5 REF.Article

Experimental determination of the fracture toughness of CdTeWERMKE, B; PETZOLD, M.Crystal research and technology (1979). 1990, Vol 25, Num 6, pp K121-K124, issn 0232-1300Article

Rare materials for photovoltaics: Recent tellurium price fluctuations and availability from copper refiningGREEN, Martin A.Solar energy materials and solar cells. 2013, Vol 119, pp 256-260, issn 0927-0248, 5 p.Article

Performance characteristics of pixelated CZT crystals used on the GammaTracker projectBECKER, Eric M; SEIFERT, Carolyn E; MYJAK, Mitchell J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8142, issn 0277-786X, isbn 978-0-8194-8752-0, 81420F.1-81420F.17Conference Paper

Neutron detection with Gd/CdTe semiconductor detectorMIYAKE, Aki; NISHIOKA, Takahiro; SINGH, Shailendra et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7805, issn 0277-786X, isbn 978-0-8194-8301-0, 78051L.1-78051L.7Conference Paper

Dual Anode Contact Geometries for X-ray and Gamma-ray Spectroscopy and 3-D LocalizationMARTIN, J. W; GARSON, A. B; LI, Q et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7449, issn 0277-786X, isbn 978-0-8194-7739-2 0-8194-7739-7, 1Vol, 744904.1-744904.8Conference Paper

Effects of a traveling magnetic field on vertical gradient freeze growth of cadmium zinc tellurideYECKEL, Andrew; DERBY, Jeffrey J.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8142, issn 0277-786X, isbn 978-0-8194-8752-0, 814214.1-814214.7Conference Paper

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