CROISSANCE PAR TRANSPORT EN PHASE VAPEURCADORET R.1982; LES SURFACES DES SOLIDES MINERAUX; FRA; PARIS: SOCIETE FRANCAISE MINERAL. CRISTALLOGR.; DA. 1982; VOL. 2; PP. 447-483; BIBL. 2 P.; ILL.Book Chapter

MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH₄/H₂ AT REDUCED PRESSURESCADORET R; HOTTIER F.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 2; PP. 259-274; BIBL. 26 REF.Article

ANALYSIS OF SILICON CRYSTAL GROWTH USING LOW PRESSURE CHEMICAL VAPOUR DEPOSITIONHOTTIER F; CADORET R.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 2; PP. 245-258; BIBL. 27 REF.Article

Growth mechanisms of (00.1)GaN substrates in the hydride vapour-phase method : surface diffusion, spiral growth, H₂ and GaCl₃ mechanismsCADORET, R.Journal of crystal growth. 1999, Vol 205, Num 1-2, pp 123-135, issn 0022-0248Article

DIAGNOSTIC DISCREPANCY IN PERSONAL ACCOUNTS OF PATIENTS WITH "SCHIZOPHRENIA"NORTH C; CADORET R.1981; ARCH. GEN. PSYCHIATRY; ISSN 0003-990X; USA; DA. 1981; VOL. 38; NO 2; PP. 133-137; BIBL. 9 REF.Article

INVESTIGATION OF THE PARAMETERS WHICH CONTROLL THE GROWTH OF (111) AND (111) FACES OF GAAS BY CHEMICAL VAPOUR DEPOSITLAPORTE JL; CADORET M; CADORET R et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 3; PP. 663-674; BIBL. 20 REF.Article

CHEMICAL VAPOUR DEPOSITION OF SILICON UNDER REDUCED PRESSURE IN A HOT-WALL REACTOR: EQUILIBRIUM AND KINETICSLANGLAIS F; HOTTIER F; CADORET R et al.1982; J. CRYST. GROWTH; NLD; DA. 1982; VOL. 56; NO 3; PP. 659-672; BIBL. 21 REF.Article

GAAS GROWTH BY VAPOUR PHASE TRANSPORT. II. INTERPRETATION OF THE GROWTH OF THE (001) FACES BY THE ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES.CADORET R; HOLLAN L; LOYAU JB et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 2; PP. 187-194; BIBL. 6 REF.Article

Mécanismes de croissance des faces {001} exactes et désorientées de GaAs par la méthode aux chlorures sous H₂ : diffusion superficielle, croissance par spirale, mécanismes de désorption HCl et GaCl₃ = GaAs growth mechanism of exact and misoriented {001} faces by the chloride method in H₂: Surface diffusion, spiral growth, HCl and GaCl₃ desorption mechanismCADORET, R; GIL-LAFON, E.Journal de physique. I. 1997, Vol 7, Num 7, pp 889-907, issn 1155-4304Article

GAAS GROWTH BY VAPOUR PHASE TRANSPORT. I. STUDY OF THE EFFECT OF SUPERSATURATION AND SURFACE ADSORPTION.LOYAU JB; OBERLIN M; OBERLIN A et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 2; PP. 176-186; BIBL. 13 REF.Article

ASSOCIATION AND LINKAGE BETWEEN ALCOHOLISM AND ELEVEN SEROLOGICAL MARKERS = ASSOCIATION ET LIAISON ENTRE L'ALCOOLISME ET 11MARQUEURS SEROLOGIQUESHILL SY; GOODWIN DW; CADORET R et al.1975; J. STUD. ALCOHOL; U.S.A.; DA. 1975; VOL. 36; NO 7; PP. 981-992; BIBL. 2 P.Article

DEPRESSION SPECTRUM DISEASE VERSUS PURE DEPRESSIVE DISEASE.VAN VALKENBURG C; LOWRY M; WINOKUR G et al.1977; J. NEW. MENTAL DIS.; U.S.A.; DA. 1977; VOL. 165; NO 5; PP. 341-347; BIBL. 13 REF.Article

DEPRESSION SPECTRUM DISEASE VERSUS PURE DEPRESSIVE DISEASE: SOME FURTHER DATA.WINOKUR G; CADORET R; BAKER M et al.1975; BRIT. J. PSYCHIATRY; G.B.; DA. 1975; VOL. 127; PP. 75-77; BIBL. 5 REF.Article

Mechanism of Si polycrystalline growth on a Si₃N₄ substrate from SiH₄/H₂ at reduced pressuresCADORET, R; HOTTIER, F.Journal of crystal growth. 1983, Vol 64, Num 3, pp 583-592, issn 0022-0248Article

Decreased epinephrine in familial alcoholism. Initial findingsSWARTZ, C. M; DREWS, V; CADORET, R et al.Archives of general psychiatry. 1987, Vol 44, Num 11, pp 938-941, issn 0003-990XArticle

Computed growth rates of (001) GaN substrates in the hydride vapour phase methodCADORET, R; TRASSOUDAINE, A; AUJOL, E et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 1, pp 5-9, issn 0031-8965Conference Paper

Equipements de transmission RNIS à 144 kbit/s de «deuxième génération» pour réseau de distribution = Second generation ISDN transmission equipment for distribution networkMARCEL, F; WAJIH, M; CADORET, R et al.Commutation & transmission. 1988, Vol 10, Num 4, pp 67-84, issn 0242-1283Article

Clinical differences between antisocial and primary alcoholicsCADORET, R; TROUGHTON, E; WIDMER, R et al.Comprehensive psychiatry. 1984, Vol 25, Num 1, pp 1-8, issn 0010-440XArticle

Hétéroépitaxie de structures contraintes Ga_xIn_1-xAs/InP et de couches InP à faible taux de défauts sur Si par la méthode aux hydrures = Strained Ga_xIn_1-xAs/InP heterostructures and low defect density InP films on Si epitaxied by the hydride methodPiffault, Nathalie; Cadoret, R.1994, 276 p.Thesis

Approach of the interplay between kinetics and diffusion in hot wall reactors used in V.P.E. of III-V compoundsCADORET, R; LAPORTE, J. L; HARROUS, M et al.Materials research bulletin. 1986, Vol 21, Num 10, pp 1259-1267, issn 0025-5408Article

Etude sur l'élaboration de monocristaux de Pb_0,8Sn_0,2Te par la méthode du flux force = Pb_0,8Sn_0,2Te crystallization from vapor by the forced flux methodOMALY, J; RHAJERISON, J; CADORET, R et al.Annales de chimie (Paris. 1914). 1988, Vol 13, Num 6, pp 489-497, issn 0151-9107Article

Numérisation du réseau de distribution (Edition 2 de la NT-LAA-ELR 300) = Distribution network digitizing. Second issue of NT/LAA/ELR/300CADORET, R.1986, 35 p.Report

Le réseau de lignes d'abonnés = Suscriber line networkCADORET, R.1984, 43 p.Report

La Transmission numérique sur ligne d'abonné au congrès «ISSLS» de 1982 = 1982 ISSLS conference. Suscriter line digital transmissionCADORET, R.1982, 44 p.Report

Epitaxial growth of InP/InAs/InP quantum wellsMIHAILOVIC, M; CADORET, M; BANVILLET, H et al.Superlattices and microstructures. 1990, Vol 8, Num 2, pp 175-177, issn 0749-6036, 3 p.Article