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Results 1 to 25 of 858

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OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORSHOEFFLINGER B.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 971-976; BIBL. 13 REF.Article

SHORT-CHANNEL MOSFET VT-VDS CHARACTERISTICS MODEL BASED ON A POINT CHARGE AND ITS MIRROR IMAGESOHNO Y.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 211-216; BIBL. 11 REF.Article

A MODEL OF IMPACT IONIZATION THROUGH SURFACE STATESHAMASAKI M; TAIRA K.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6224-6226; BIBL. 6 REF.Article

INVESTIGATION OF PARAMETER SENSITIVITY OF SHORT CHANNEL MOSFETSSELBERHERR S; SCHUETZ A; POETZL H et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 85-90; BIBL. 7 REF.Article

V-SHAPED NOTCHED-CHANNEL FIELD-EFFECT TRANSISTOR.MOK TD; SALAMA CAT.1974; ELECTRON-LETTERS; G.B.; DA. 1974; VOL. 10; NO 23; PP. 478-480; BIBL. 6 REF.Article

DEPENDENCE OF MOSFET NOISE PARAMETERS IN N-CHANNEL MOSFETS ON OXIDE THICKNESSPARK HS; VAN DER ZIEL A.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 4; PP. 313-315; BIBL. 8 REF.Article

THRESHOLD VOLTAGE SHIFT OF N-CHANNEL SI-GATE MOSFET'S.HORIUCHI S.1975; I.E.E.E. TRANS ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1038-1043; BIBL. 18 REF.Article

VDS VOLTAGE CAPABILITIES OF A DIFFUSED J.F.E.T. WITH A VERTICAL-CHANNEL ARRANGEMENT.MORENZA JL; ESTEVE D.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 8; PP. 172-174; BIBL. 8 REF.Article

CAPACITANCE AND R-C TIME CONSTANT OF A NEARLY PINCHED-OFF SEMICONDUCTING CHANNEL IN THE HIGH-FREQUENCY REGIME.LEHOVEC K; ZAMANI N.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 11; PP. 673-675; BIBL. 6 REF.Article

THRESHOLD VOLTAGE SHIFT OF P-CHANNEL MOS-TRANSISTORS BY IMPLANTATION OF DONORS.RUNGE H.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 1; PP. 43-46; BIBL. 5 REF.Article

CASMOS - AN ACCURATE MOS MODEL WITH GEOMETRY-DEPENDENT PARAMETERS. IOAKLEY RE; HOCKING RJ.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 6; PART. 1; PP. 239-247; BIBL. 9 REF.Article

ELECTRICALLY VARIABLE CHANNEL-LENGTH CHANGES IN MNOS TRANSISTORS.LONKY ML; TURLEY AP.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 3; PP. 162-164; BIBL. 6 REF.Article

MOBILITY PARAMETERS AND METAL-OXIDE-SEMICONDUCTOR-TRANSISTOR PROPERTIESMARTINOT H; ROSSEL P; VASSILIEFF G et al.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 24; PP. 599-600; BIBL. 11 REF.Serial Issue

COMPARISON BETWEEN TWO-DIMENSIONAL SHORT-CHANNEL MOSFET MODELSUMESH KUMAR.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 37-46; BIBL. 85 REF.Article

CHANNEL-COLLECTOR TRANSISTORSZIPPERIAN TE; WARNER RM JR; GRUNG BL et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 341-343; BIBL. 13 REF.Article

INVESTIGATION OF THE MOST CHANNEL CONDUCTANCE IN WEAK INVERSIONKOOMEN J.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 7; PP. 801-810; BIBL. 28 REF.Serial Issue

ELECTRON MOBILITY IN N-CHANNEL DEPLETION-TYPE MOS TRANSISTORSOHNO Y; OKUTO Y.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 190-194; BIBL. 11 REF.Article

SHORT-CHANNEL MOST THRESHOLD VOLTAGE MODELRATNAKUMAR KN; MEINDL JD.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 937-948; BIBL. 31 REF.Article

MODELE DU TRANSISTOR MOS VALABLE DANS UN GRAND DOMAINE DE COURANTSOGUEY H; CSERVENY S.1982; BULL. SCHWEIZ. ELEKTROTECH. VER. VERB. SCHWEIZ. ELEKTRIZITATSW.; ISSN 0004-587X; CHE; DA. 1982; VOL. 73; NO 3; PP. 113-116; ABS. GER; BIBL. 6 REF.Article

THRESHOLD SHIFTING OF NMOS TRANSISTORS BY ARSENIC ION IMPLANTATION PRIOR TO GATE OXIDATION = AJUSTAGE DU SEUIL DE TRANSISTORS NMOS PAR IMPLANTATION D'IONS D'ARSENIC AVANT L'OXYDATION DE LA GRILLEDE SOUZA JP; CHARRY E.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1176-1178; BIBL. 9 REF.Article

A COMPATIBLE NMOS, CMOS METAL GATE PROCESSSCHNEIDER J; ZIMMER G; HOEFFLINGER B et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 7; PP. 832-836; BIBL. 7 REF.Article

FREEZE-OUT EFFECTS ON N-CHANNEL MOSFET'S.AYMELOGLU S; ZEMEL JN.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 466-470; BIBL. 11 REF.Article

SOS MOSFET TWO-DIMENSIONAL ANALYSISFUKUMA M; OKUTO Y.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 410-413; BIBL. 9 REF.Article

N-CHANNEL MOSFETS WITH WSI2 GATEFARROKH MOHAMMADI; SARASWAT KC.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 2; PP. 24-25; BIBL. 9 REF.Article

DEGRADATION BEHAVIOUR OF N-CHANNEL M.O.S.F.E.T.S OPERATED AT 77 KDAVIS JR.1980; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1980; VOL. 127; NO 4; PP. 183-187; BIBL. 16 REF.Article

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