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Injection current-dependent quantum efficiency of InGaN-based light-emitting diodes on sapphire and GaN substratesYANG, Y; CAO, X. A; YAN, C. H et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 195-199, issn 1862-6300, 5 p.Conference Paper

GaN electronics for high power, high temperature applicationsPEARTON, S. J; REN, F; ABERNATHY, C. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 227-231, issn 0921-5107Article

Plasma damage in p-GaNCAO, X. A; ZHANG, A. P; DANG, G. T et al.Journal of electronic materials. 2000, Vol 29, Num 3, pp 256-261, issn 0361-5235Article

Microstructural origin of leakage current in GaN/InGaN light-emitting diodesCAO, X. A; TEETSOV, J. A; SHAHEDIPOUR-SANDVIK, F et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 172-177, issn 0022-0248, 6 p.Article

Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaNCAO, X. A; LEBOEUF, S. F; ARTHUR, S. D et al.SPIE proceedings series. 2004, pp 48-53, isbn 0-8194-5468-0, 6 p.Conference Paper

Dramatically improved current spreading in UV leds via SI delta-doping in the N-algan cladding layerLEBOEUF, S. F; CAO, X. A; ROWLAND, L. B et al.Proceedings - Electrochemical Society. 2003, pp 158-165, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Carrier capture and recombination at localized states in InGaN/GaN light-emitting diodesCAO, X. A; LEBOEUF, S. F; ROWLAND, L. B et al.Proceedings - Electrochemical Society. 2003, pp 166-173, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodesCAO, X. A; TOPOL, K; KALOYEROS, A. E et al.SPIE proceedings series. 2002, pp 105-113, isbn 0-8194-4543-6, 9 p.Conference Paper

Removal and passivation of surface defects in perforated GaN-based light-emitting diodesYANG, Y; CAO, X. A.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7518, issn 0277-786X, isbn 978-0-8194-7907-5 0-8194-7907-1, 1Vol, 75180V.1-75180V.6Conference Paper

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nmCAO, X. A; YAN, C. H; D'EVELYN, M. P et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 242-248, issn 0022-0248, 7 p.Article

Simplified Electro-optical model for device and circuit simulations of light emitting diodes (LEDs)EBONG, A; DOWNEY, E; ARTHUR, S et al.SPIE proceedings series. 2004, pp 286-293, isbn 0-8194-5060-X, 8 p.Conference Paper

Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodesCAO, X. A; LEBOEUF, S. F; ROWLAND, L. B et al.Journal of electronic materials. 2003, Vol 32, Num 5, pp 316-321, issn 0361-5235, 6 p.Article

Modeling and circuit simulation of GaN-based light emitting diodes for optimum efficiency through uniform current spreadingEBONG, A; ARTHUR, S; DOWNEY, E et al.SPIE proceedings series. 2002, pp 187-194, isbn 0-8194-4543-6, 8 p.Conference Paper

Characterization of zinc-tin-oxide films deposited by thermal co-evaporationACHARYA, R; ZHANG, Y. Q; CAO, X. A et al.Thin solid films. 2012, Vol 520, Num 19, pp 6130-6133, issn 0040-6090, 4 p.Article

Thermal and nonthermal factors affecting the quantum efficiency of deep-ultraviolet light-emitting diodesGUO, H; YANG, Y; CAO, X. A et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 12, pp 2953-2957, issn 1862-6300, 5 p.Article

Advanced processing of GaN for electronic devicesCAO, X. A; PEARTON, S. J; REN, F et al.Critical reviews in solid state and materials sciences. 2000, Vol 25, Num 4, pp 279-390, issn 1040-8436Article

Electrical and optical characteristics of green light-emitting diodes on bulk GaN substratesYANG, Y; CAO, X. A; YAN, C. H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7231, issn 0277-786X, isbn 978-0-8194-7477-3 0-8194-7477-0, 1Vol, 2310W1-7310W.6Conference Paper

Surface chemical and electronic properties of plasma-treated n-type Al_0.5Ga_0.5NCAO, X. A; PIAO, H; LI, J et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 10, pp 3410-3416, issn 1862-6300, 7 p.Article

Temperature-dependent electroluminescence of AlGaN-based UV LEDsCAO, X. A; LEBOEUF, S. F; STECHER, T. E et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 329-331, issn 0741-3106, 3 p.Article

Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodesMERFELD, D. W; CAO, X. A; LEBOEUF, S. F et al.Journal of electronic materials. 2004, Vol 33, Num 11, pp 1401-1405, issn 0361-5235, 5 p.Article

GaN electronics for high power, high temperature applicationsPEARTON, S. J; REN, F; CHANG, P et al.The Electrochemical Society interface. 2000, Vol 9, Num 2, pp 34-39, issn 1064-8208Article

Cl₂/Ar high-density-plasma damage in GaN Schottky diodesZHANG, A. P; DANG, G; HICKMAN, R et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 2, pp 719-722, issn 0013-4651Article