The electrical characteristics of metal/SiO₂/InSb capacitor fabricated by photoenhanced chemical vapor depositionTAI-PING SUN; SI-CHEN LEE; SHENG-JENN YANG et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 5, pp 1115-1121, issn 0734-211X, 7 p.Article

Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingHORI, T; IWASAKI, H; TSUJI, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 2, pp 340-350, issn 0018-9383, 11 p.Article

NON-STEADY-STATE BULK-GENERATION PROCESS IN PULSED METAL-INSULATOR-SEMICONDUCTOR CAPACITORS.SIMMONS JG; WEI LS.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 2; PP. 153-158; BIBL. 29 REF.Article

NONEQUILIBRIUM PROPERTIES OF MIS-CAPACITORSKELBERLAU U; KASSING R.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 321-327; BIBL. 13 REF.Article

AN INVESTIGATION OF THE SILICON-SAPPHIRE INTERFACE USING THE MIS CAPACITANCE METHOD.GOODMAN AM.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 63-65; BIBL. 13 REF.Article

GRAIN BOUNDARY EFFECTS IN POLY-SI AS DETERMINED BY LOW FREQUENCY CAPACITANCE AND CONDUCTANCE DATARAO VJ; ANDERSON WA; RAJESWARAN G et al.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 67; NO 2; PP. 709-715; ABS. GER; BIBL. 9 REF.Article

THE INFLUENCE OF THE OUTER OXIDE SURFACE CONDITIONS OF MLS CAPACITORS ON THE SHAPE OF THEIR C-V CURVESVITANOV PK; KAMENOVA M; SOTIROVA MS et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 70; NO 1; PP. L5-L7; BIBL. 6 REF.Article

MODELING OF THE TRANSIENT RESPONSE OF AN MIS CAPACITORCOLLINS TW; CHURCHILL JN; HOLMSTROM FE et al.1978; ADV. ELECTRON. ELECTRON PHYS.; USA; DA. 1978; VOL. 47; PP. 267-329; BIBL. 26 REF.Article

ON THE THEORY OF MIS CAPACITANCE.NAKHMANSON RS.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 745-758; BIBL. 31 REF.Article

Basic properties of metal/insulator-semiconductor structures containing borazone and diamond layers produced by the reactive pulse plasma methodSZMIDT, J; JAKUBOWSKI, A; MICHALSKI, A et al.Thin solid films. 1983, Vol 110, Num 1, pp 7-20, issn 0040-6090Article

Surface conductivity measurements by a capacitive coupling techniqueDOLGOPOLOV, V; MAZURE, C; ZRENNER, A et al.Journal of applied physics. 1984, Vol 55, Num 12, pp 4280-4283, issn 0021-8979Article

Thermal wave propagation through metal insulator silicon capacitorKUMAR, S; BHATTACHARYA, P; SHARMA, D. K et al.SPIE proceedings series. 1998, pp 1196-1199, isbn 0-8194-2756-X, 2VolConference Paper

Simple formulas for analysis of C-V characteristics of MIS capacitorJAKUBOWSKI, A; INIEWSKI, K.Solid-state electronics. 1983, Vol 26, Num 8, pp 755-756, issn 0038-1101Article

A CORRECTED FORMULA FOR TRANSIENT CHARGING OF AN INSULATOR IN DLTS EXPERIMENTSTHURZO I.1983; JOURNAL OF PHYSICS D: APPPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 2; PP. L37-L38; BIBL. 1 REF.Article

AN INVESTIGATION OF THE INTERFACE STATE DENSITY IN METAL-SILICON NITRIDE-SILICON STRUCTURESBIGORGNE JP; FAVRE M; SALACE G et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 243-247; BIBL. 16 REF.Article

THE EFFECT OF RF ANNEALING UPON ELECTRON-BEAM IRRADIATED MIS STRUCTURESMA WHL; MA TP.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 663-666; BIBL. 18 REF.Article

DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIESCHANG CC; JOHNSON WC.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1368-1373; BIBL. 13 REF.Article

INTERFACE-STATE CHARACTERISTICS OF GAN/GAAS MIS CAPACITORSLAKSHMI E; BHATTACHARYYA AB.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 8; PP. 811-815; BIBL. 24 REF.Article

ELECTRICAL CONDUCTION OF SILICON NITRIDE FILMSPOPOVA L; ANTOV B; VITANOV P et al.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 5; PP. 487-495; BIBL. 14 REF.Article

FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS.CHANG CC; JOHNSON WC.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 10; PP. 1249-1255; BIBL. 21 REF.Article

MODULATION DU RAYONNEMENT MILLIMETRIQUE DANS UNE STRUCTURE MISGUSAKOV VV; KATS LI.1979; ZH. TEKH. FIZ.; SUN; DA. 1979; VOL. 49; NO 6; PP. 1306-1309; BIBL. 8 REF.Article

CORRELATION OF PULSED M.O.S. CAPACITOR MEASUREMENTS WITH OXIDATION INDUCED DEFECTS.UNTER TF; ROBERTS PCT; LAMB DR et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 4; PP. 93-94; BIBL. 8 REF.Article

ELECTRICAL PROPERTIES OF CVD AL₂O-GAAS MIS CAPACITORSTANAKA K; TAKAHASHI H; KUNIYOSHI S et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1093-1094; BIBL. 8 REF.Article

METAL-INSULATOR-SEMICONDUCTOR STUDIES OF LEAD TELLURIDELILLY DA; JOSLIN DE; KAN HKA et al.1978; INFRARED PHYS.; G.B.; DA. 1978; VOL. 18; NO 1; PP. 51-57; BIBL. 15 REF.Article

COMMENTS ON: NON-STEADY-STATE BULK-GENERATION PROCESSES IN PULSED METAL-INSULATOR-SEMI-CONDUCTOR CAPACITORS.GRIMBERGEN CA; KUPER P.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 12; PP. 1040-1041; BIBL. 3 REF.Article