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EDGE PROFILES IN THE PLASMA ETCHING OF POLYCRYSTALLINE SILICONADAMS AC; CAPIO CD.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 2; PP. 366-370; BIBL. 18 REF.Article

THE DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSUREADAMS AC; CAPIO CD.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 1042-1046; BIBL. 18 REF.Article

THE CHEMICAL DEPOSITION OF BORON-NITROGEN FILMSADAMS AC; CAPIO CD.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 399-405; BIBL. 19 REF.Article

AN EVALUATION OF THE PRISM COUPLER FOR MEASURING THE THICKNESS AND REFRACTIVE INDEX OF DIELECTRIC FILMS ON SILICON SUBSTRATESADAMS AC; SCHINKE DP; CAPIO CD et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1539-1543; BIBL. 16 REF.Article

CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDEADAMS AC; ALEXANDER FB; CAPIO CD et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 7; PP. 1545-1551; BIBL. 28 REF.Article

THE HIGH TEMPERATURE DEPOSITION AND EVALUATION OF PHOSPHORUS- OR BORON-DOPED SILICON DIOXIDE FILMSADAMS AC; CAPIO CD; HASZKO SE et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 313-319; BIBL. 20 REF.Article

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