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kw.\*:("CAPTURE PORTEUR CHARGE")

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EFFET DE LA SOUS-COUCHE DE GEO2 SUR LA CAPTURE DES PORTEURS DE CHARGE DANS LE SYSTEME GERMANIUM-SIO2 PYROLITIQUEZABOTIN VM; KOZLOV SN; PLOTNIKOV GS et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 359-364; BIBL. 13 REF.Article

DISTRIBUTION OF NATURAL RADIOACTIVITY ATTACHED TO ATMOSPHERIC AEROSOL PARTICLESTYMEN G.1978; J. ENVIRONMENT. SCI. HEALTH, A; USA; DA. 1978; VOL. 13; NO 10; PP. 803-815; BIBL. 23 REF.Article

MESOPAUSE DUST AS A SINK FOR IONIZATION.PARTHASARATHY R.1976; J. GEOPHYS. RES.; U.S.A.; DA. 1976; VOL. 81; NO 13; PP. 2392-2396; BIBL. 6 REF.Article

THE CAPTURE OF IONS BY VORTEX LINES AT LOW TEMPERATURES.OSTERMEIER RM; GLABERSON WI.1974; PHYS. LETTERS, A; NETHERL.; DA. 1974; VOL. 49; NO 3; PP. 223-224; BIBL. 6 REF.Article

INFLUENCE DES IONS DE CUIVRE ET DE L'ORIENTATION CRISTALLOGRAPHIQUE SUR LES PROPRIETES SUPERFICIELLES DU GERMANIUM EN CONTACT AVEC L'ELECTROLYTESHIROKOV AA; BOZHKOV VG; VYATKIN AP et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1975; VOL. 18; NO 8; PP. 97-101; BIBL. 12 REF.Article

CALCUL DES COEFFICIENTS DE FIXATION DES PETITS IONS POSITIFS EN ATMOSPHERE BIPOLAIRE SYMETRIQUE.TYMEN G; RENOUX A.1977; CHEMOSPHERE; G.B.; DA. 1977; VOL. 6; NO 7; PP. 393-400; BIBL. 10 REF.Article

SLOW STATES IN INSB/SIOX THIN FILM TRANSISTORS.SEWELL H; ANDERSON JC.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 641-649; BIBL. 15 REF.Article

DYNAMIQUE DE CAPTURE ET DE RECOMBINAISON DES PORTEURS DANS LE PROCESSUS DE DECHARGE D'UN PHOTORECEPTEUR A SEMICONDUCTEURARKHIPOV VI; RUDENKO AI.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 8; PP. 1527-1531; BIBL. 2 REF.Article

A NEW METHOD FOR MEASURING THE LIFE TIME OF CAPTURED ELECTRONS IN DEEP TRAPSSTRASSLER S; KELLER G.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 42; NO 7; PP. 513-514; BIBL. 4 REF.Serial Issue

DETERMINATION OF THE CAPTURE RATE CN OF THE GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N+-I-N+ SILICON SCLC DIODES.KASSING R; LENZ H.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 131-139; ABS. ALLEM.; BIBL. 25 REF.Article

THE INFLUENCE OF CAPTURE OF THE INJECTED CURRENT CARRIERS ON THE CHARACTERISTICS OF BARITT DIODES.HARUTUNIAN VM; BUNIATIAN VV.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 491-497; BIBL. 30 REF.Article

CAPTURE PROCESSES OF EXCITONS AND FREE CARRIERS BY SHALLOW DONOR-ACCEPTOR PAIRS IN CDS.FUKUSHIMA T; SHIONOYA S.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 38; NO 3; PP. 797-803; BIBL. 9 REF.Article

ETUDE DES PROCESSUS DE CAPTURE DES PORTEURS DE CHARGE DANS LES STRUCTURES MOS A NITRURE DE SILICIUM AVEC UNE COUCHE TUNNEL MINCE DE BIOXYDE DE SILICIUMGUZEV AA; KURYSHEV GL; RZHANOV AV et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 1; PP. 27-32; BIBL. 6 REF.Article

RECOMBINAISON ET CAPTURE DES PORTEURS DE CHARGE DANS LES COUCHES EPITAXIALES D'ARSENIURE DE GALLIUM SE TROUVANT DANS DE FORTS CHAMPS ELECTRIQUESKRAVCHENKO AF; LISENKER BS; MARONCHUK YU E et al.1975; MIKROELEKTRONICA; S.S.S.R.; DA. 1975; VOL. 4; NO 4; PP. 311-316; BIBL. 20 REF.Article

DETERMINATION DES BARRIERES DE POTENTIEL DANS LE SYSTEME GE-SI3N4 A PARTIR DE LA CAPTURE DES PORTEURS PHOTOINJECTESMISHCHENKO M; NEJZVESTNYJ IG; SINYUKOV MP et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 6; PP. 501-507; BIBL. 11 REF.Article

OPTIMIZATION OF RECOMBINATION LEVELS AND THEIR CAPTURE CROSS SECTION IN POWER RECTIFIERS AND THYRISTORS.BALIGA BJ; SURINDER KRISHNA.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 225-232; BIBL. 24 REF.Article

DETERMINATION OF INTERFACE STATE DENSITY AND CAPTURE CROSS SECTION BY A HYSTERESIS PULSED C-V METHODKAPLAN G.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 87-89; BIBL. 7 REF.Article

EVALUATION OF AEROSOL EFFECT ON ELECTRICAL CONDUCTIVITY IN THE LOWER STRATOSPHERETAKAGI M; MORITA Y.1980; J. GEOMAGN. GEOELECTR.; ISSN 0022-1392; JPN; DA. 1980; VOL. 32; NO 11; PP. 671-681; BIBL. 2 P.Article

TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS SECTIONS AT SURFACE STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPYKATSUBE T; KAKIMOTO K; IKOMA T et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3504-3508; BIBL. 20 REF.Article

TWO-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION DAMAGELAI SK.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 58-60; BIBL. 28 REF.Article

A DETERMINATION OF INTERFACE STATE ENERGY DURING THE CAPTURE OF ELECTRONS AND HOLES USING DLTSWANG KL.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 819-821; BIBL. 12 REF.Article

REGIME DE FAIBLE INVERSION DANS UN TRANSISTOR METAL-DIELECTRIQUE-SEMICONDUCTEUR AU GERMANIUMKVON ZE DON; NEIZVESTNYJ IG.1978; MIKROELEKTRONIKA; SUN; DA. 1978; VOL. 7; NO 6; PP. 553-559; BIBL. 10 REF.Article

SCHOTTKY I2L (SUBSTRATE FED LOGIC)-AN ANALYSIS OF THE IMPLICATIONS OF THE VERTICAL INJECTOR STRUCTURE AND SCHOTTKY COLLECTION.BLATT V; SUMERLING GW.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 128-135; BIBL. 4 REF.Article

CAPTURE DES PORTEURS DANS LE PROCESSUS DE DECHARGE D'UN PHOTORECEPTEUR A SEMI-CONDUCTEURARKHIPOV VI; RUDENKO AI.1977; ZH. NAUCH. PRIKL. FOTOGR. KINEMATOGR.; S.S.S.R.; DA. 1977; VOL. 22; NO 3; PP. 195-199; BIBL. 3 REF.Article

Temperature dependence of electron-capture cross section of localized states in α-Si: HOKUSHI, H; TAKAHAMA, T; TOKUMARU, Y et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 5184-5187, issn 0163-1829Article

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