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CRITICAL CHANNELING ANGLES OF LOW ENERGY IONS IN SILICON.GRAHMANN H; FEUERSTEIN A; KALBITZER S et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 2; PP. 117-119; BIBL. 14 REF.Article

ION TREATMENT OF SILICON IN A GLOW DISCHARGE.SOKOLOWSKI M; SOKOLOWSKA A; ROLINSKI E et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 30; NO 1; PP. 29-35; BIBL. 18 REF.Article

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MESURE DE LA SECTION EFFICACE TOTALE DE REACTION D'IONS LOURDS: APPLICATION AU SYSTEME ¹²C+¹²C A 112 MEV = HEAVY ION TOTAL CROSS-SECTION REACTION MEASUREMENTS: THE CASE OF ¹²C+¹²C REACTION AT 112 MEVCHERKAOUI TADILI RAJAH.1982; ; FRA; DA. 1982; 89 P.; 30 CM; ABS. ENG; BIBL. 26 REF.; TH. 3E CYCLE: PHYS. NUCL./GRENOBLE 1/1982Thesis

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KBETA /KALPHA INTENSITY RATIOS FOR X-RAY PRODUCTION BY FAST DEUTERONS, ALPHA PARTICLES, AND CARBON IONS.LI TK; WATSON RL.1974; PHYS. REV., A; U.S.A.; DA. 1974; VOL. 9; NO 4; PP. 1574-1581; BIBL. 27 REF.Article

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THE DECREASE IN THE ELECTRICAL SHEET RESISTANCE OF BORON AND THE FORMATION OF BORON CARBIDE BY ION IMPLANTATION OF C⁺ IONS INTO BORON AND SUBSEQUENT ANNEALINGTREUTLER CPO; DIENEL G; HOHMUTH K et al.1981; J. LESS-COMMON MET.; ISSN 0022-5088; CHE; DA. 1981; VOL. 80; NO 1; PP. 1-5; BIBL. 16 REF.Article

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