DISCONTINUITIES IN DRIFT SOLUTIONS DUE TO REVERSAL IN AMBIPOLAR DRIFT. INJECTION ANS ACCUMULATION OF HOT CARRIERS.DMITRIEV AP; STEFANOVICH AF; TSENDIN LD et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. 45-53; ABS. RUSSE; BIBL. 12 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

HOT ELECTRONS IN A GAAS HETEROLAYER AT LOW TEMPERATUREPRICE PJ.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6863-6866; BIBL. 16 REF.Article

DYNAMIQUE DES ELECTRONS DANS L'ARGON ET LE XENON CONDENSESGUSHCHIN EM; KRUGLOV AA; OBODOVSKIJ IM et al.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 82; NO 4; PP. 1114-1125; ABS. ENG; BIBL. 25 REF.Article

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONSBOUDREAUX DS; WILLIAMS F; NOZIK AJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2158-2163; BIBL. 17 REF.Article

THE MINORITY-CARRIER INJECTION IN THE COMPLETELY DEPLETED MSM STRUCTUREMALACHOWSKI MJ; STEPNIEWSKI J.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 381-385; BIBL. 9 REF.Article

THEORY OF MINORITY-CARRIER INJECTIONMANIFACIER JC; HENISCH HK; GASIOT J et al.1979; PHYS. REV. LETT.; USA; DA. 1979; VOL. 43; NO 10; PP. 708-711; BIBL. 8 REF.Article

MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article

RESISTIVITE ET COEFFICIENT DE DIFFUSION DES PORTEURS CHAUDS: TECHNIQUES DE MESURES ET APPLICATIONS AU SI-PNDONG OTOUNGA SIMON.1980; ; FRA; DA. 1980; 61 P.: ILL.; 30 CM; BIBL. 6 REF.; TH. 3E CYCLE: SIGNAUX BRUITS, COMPOS. ELECTRON. BRUIT FOND/MONTPELLIER 2/1980/314Thesis

NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article

TRAPPING PARAMETERS FROM ISOTHERMAL DECAY OF THERMOLUMINESCENCELILLEY E; MOHARIL SV.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 3; PP. L17-L19; BIBL. 7 REF.Article

LA PHOTOCONDUCTIVITE NEGATIVE DU CARBURE DE SILICIUM INHOMOGENE DE LA MODIFICATION CUBIQUERODIONOV VN; SHAKALOV AP.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 4; PP. 695-698; BIBL. 9 REF.Article

DIFFRACTION EFFICIENCY AND DECAY TIMES OF FREE-CARRIER GRATINGS IN SILICONEICHLER HJ; MASSMANN F.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3237-3242; BIBL. 19 REF.Article

EFFECTS OF STOICHIOMETRY ON THERMAL STABILITY OF UNDOPED SEMI-INSULATING GAASTA LB; HOBGOOD HM; ROHATGI A et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5771-5775; BIBL. 17 REF.Article

POINT-CONTACT INJECTION AT HIGH FIELDS IN INSULATOR WITH TRAPS & THERMAL FREE CARRIERSSHARMA YK.1982; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1982; VOL. 20; NO 2; PP. 130-132; BIBL. 5 REF.Article

TIME-RESOLVED MEASUREMENT OF THE ESCAPE OF CHARGE CARRIERS FROM A COULOMBIC POTENTIAL WELL BY DIFFUSIONAL MOTIONEICHHORN M; WILLIG F; CHARLE KP et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 76; NO 9; PP. 4648-4656; BIBL. 24 REF.Article

ABSORPTION TIME BY A RANDOM TRAP DISTRIBUTIONROSENSTOCK HB; STRALEY JP.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 5; PP. 2540-2544; BIBL. 7 REF.Article

FACTEUR DE HALL ET EVOLUTION DE LA FONCTION DE DISTRIBUTION DES ELECTRONS CHAUDSBRAZIS RS; STARIKOV EV; SHIKTOROV PN et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 40-45; BIBL. 13 REF.Article

DISTRIBUTION SPATIALE DE LA CHARGE CAPTUREE DANS LES COUCHES DE NITRURE DE SILICIUM DANS DES STRUCTURES ELECTROLYTE-NITRURE DE SILICIUM-OXYDE DE SILICIUM - SILICIUMSHIRSHOV YU M; NABOK AV; GOLTVYANSKIJ YU V et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 223-228; BIBL. 12 REF.Article

ON ANOMALOUS DRIFT MOBILITY RESULTS IN A-SILICON ALLOYSDATTA T; SILVER M.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1067-1071; BIBL. 6 REF.Article

THE INFLUENCE OF SURFACE RECOMBINATION ON THE DOUBLE-INJECTION NEGATIVE-RESISTANCEBRODKORB W.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. K157-K159; BIBL. 6 REF.Article

MINORITY-CARRIER INJECTION INTO POLYSILICON EMITTERSELTOUKHY AA; ROULSTON DJ.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 6; PP. 961-964; BIBL. 15 REF.Article

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