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MINORITY CARRIER INJECTION AND STORAGE INTO A HEAVILY DOPED EMITTER: APPROXIMATE SOLUTION FOR AUGER RECOMBINATIONDUMKE WP.1981; SOLID. STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 155-157; BIBL. 10 REF.Article

THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODESLEE K; NUSSBAUM A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 655-660; BIBL. 12 REF.Article

MINORITY-CARRIER DIFFUSION COEFFICIENTS IN HIGHLY DOPED SILICONDZIEWIOR J; SILBER D.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 170-172; BIBL. 13 REF.Article

EINFLUSS HEISSER LADUNGSTRAEGER AUF DIE DONATOR-AKZEPTOR-PAAR-REKOMBINATION. = INFLUENCE DES PORTEURS CHAUDS SUR LA RECOMBINAISON DE PAIRE DONNEUR-ACCEPTEURHANSEL T; ZEHE A; SCHWABE R et al.1976; KRISTALL U. TECH.; DTSCH.; DA. 1976; VOL. 11; NO 6; PP. 653-658; ABS. ANGL.; BIBL. 10 REF.Article

IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT ELECTRONS IN N-SI AT LOW TEMPERATURESASCHE M; KOSTIAL H; SARBEY OG et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. 521-530; ABS. RUS; BIBL. 26 REF.Article

ETUDE DU RETARD DE PHASE ET DETERMINATION DE LA DUREE DE VIE DES PORTEURS MINORITAIRES A L'INTERIEUR DU GERMANIUM ET DU SILICIUM POUR UNE INJECTION SINUSOIDALE.GAY HC.1976; C.R. ACAD. SCI., B; FR.; DA. 1976; VOL. 282; NO 24; PP. 551-553; ABS. ANGL.; BIBL. 2 REF.Article

DISCONTINUITIES IN DRIFT SOLUTIONS DUE TO REVERSAL IN AMBIPOLAR DRIFT. INJECTION ANS ACCUMULATION OF HOT CARRIERS.DMITRIEV AP; STEFANOVICH AF; TSENDIN LD et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. 45-53; ABS. RUSSE; BIBL. 12 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

HOT ELECTRONS IN A GAAS HETEROLAYER AT LOW TEMPERATUREPRICE PJ.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6863-6866; BIBL. 16 REF.Article

DYNAMIQUE DES ELECTRONS DANS L'ARGON ET LE XENON CONDENSESGUSHCHIN EM; KRUGLOV AA; OBODOVSKIJ IM et al.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 82; NO 4; PP. 1114-1125; ABS. ENG; BIBL. 25 REF.Article

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONSBOUDREAUX DS; WILLIAMS F; NOZIK AJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2158-2163; BIBL. 17 REF.Article

EFFECT OF ELECTRON-ELECTRONSCATTERING ON MOBILITY IN GAASCHATTOPADHYAY D.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3330-3332; BIBL. 13 REF.Article

VELOCITY AUTO-CORRELATION AND HOT-ELECTRON DIFFUSION CONSTANT IN GAAS AND INPDEBROY M; NAG BR.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 28; NO 3; PP. 195-204; BIBL. 28 REF.Article

MINORITY-CARRIER LIFETIME: CORRELATION WITH IC PROCESS PARAMETERSHUFF HR; CHIU TL.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1142-1147; BIBL. 37 REF.Article

THEORY OF MULTIPLE TRAPPING.SCHMIDLIN FW.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 7; PP. 451-453; BIBL. 12 REF.Article

DYNAMIQUE D'ECHAUFFEMENT DES ELECTRONS DANS LE CAS D'UN MECANISME DE DIFFUSION SANS FREINMATULIS A; PIRAGAS K.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 5; PP. 575-585; ABS. LITU. ANGL.; BIBL. 5 REF.Article

OUTDIFFUSION OF RECOMBINATION CENTERS FROM THE SUBSTRATE INTO LPE LAYERS: GAASJASTRZEBSKI L; LAGOWSKI J; GATOS HC et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2231-2234; BIBL. 26 REF.Article

DIFFERENTIAL RELAXATION TIMES AND DIFFUSIVITIES OF HOT CARRIERS IN ISOTROPIC SEMICONDUCTORS.NOUGIER JP; ROLLAND M.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 4; PP. 1683-1687; BIBL. 24 REF.Article

MINORITY CARRIER INJECTION ONTO HEAVILY DOPED SILICON.SLOTBOOM JW.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 167-170; BIBL. 9 REF.Article

THE MINORITY-CARRIER INJECTION IN THE COMPLETELY DEPLETED MSM STRUCTUREMALACHOWSKI MJ; STEPNIEWSKI J.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 381-385; BIBL. 9 REF.Article

THEORY OF MINORITY-CARRIER INJECTIONMANIFACIER JC; HENISCH HK; GASIOT J et al.1979; PHYS. REV. LETT.; USA; DA. 1979; VOL. 43; NO 10; PP. 708-711; BIBL. 8 REF.Article

MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article

RESISTIVITE ET COEFFICIENT DE DIFFUSION DES PORTEURS CHAUDS: TECHNIQUES DE MESURES ET APPLICATIONS AU SI-PNDONG OTOUNGA SIMON.1980; ; FRA; DA. 1980; 61 P.: ILL.; 30 CM; BIBL. 6 REF.; TH. 3E CYCLE: SIGNAUX BRUITS, COMPOS. ELECTRON. BRUIT FOND/MONTPELLIER 2/1980/314Thesis

NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article

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