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Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High-κ Dielectrics, and Metallic Source/DrainVINET, M; POIROUX, T; BAUD, L et al.IEEE electron device letters. 2009, Vol 30, Num 7, pp 748-750, issn 0741-3106, 3 p.Article

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Measurement of As diffusivity in Ni₂Si thin filmsBLUM, I; PORTAVOCE, A; MANGETINCK, D et al.Microelectronic engineering. 2010, Vol 87, Num 3, pp 263-266, issn 0167-9317, 4 p.Conference Paper

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Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOSAIME, D; FROMENT, B; LAVIRON, C et al.International Electron Devices Meeting. 2004, pp 87-90, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper