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INFLUENCE OF ALXGA1-XAS LAYER THICKNESS ON THRESHOLD CURRENT DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY FOR GAAS-ALXGA1-XAS DH LASERS.CASEY HC JR; PANISH MB.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1393-1395; BIBL. 7 REF.Article

DRY PROCESSING OF HIGH RESOLUTION AND HIGH ASPECT RATIO STRUCTURES IN GAAS-ALXGA1-XAS FOR INTEGRATED OPTICS.SOMEKH S; CASEY HC JR.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 1; PP. 126-136; BIBL. 51 REF.Article

PROPERTIES OF SCHOTTKY BARRIERS AND P-N JUNCTIONS PREPARED WITH GAAS AND ALXGA1-XAS MOLECULAR BEAM EPITAXIAL LAYERS.CHO AY; CASEY HC JR.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1258-1263; BIBL. 22 REF.Article

VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERSCASEY HC JR; MILLER BI; PINKAS E et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1281-1287; BIBL. 21 REF.Serial Issue

BACK-SURFACE EMITTING GAASXSB1-X LED'S (LAMBDA =1.0 MU M) PREPARED BY MOLECULAR-BEAM EPITAXY.CHO AY; CASEY HC JR; FOY PW et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 8; PP. 397-399; BIBL. 14 REF.Article

ROOM-TEMPERATURE OPERATION OF LOW-THRESHOLD SEPARATE-CONFINEMENT HETEROSTRUCTURE INJECTION LASER WITH DISTRIBUTED FEEDBACK.CASEY HC JR; SOMEKH S; ILEGEMS M et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 142-144; BIBL. 18 REF.Article

APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS.CASEY HC JR; CHO AY; BARNES PA et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 467-470; BIBL. 11 REF.Article

INFLUENCE OF GROWTH CONDITIONS ON THE THRESHOLD CURRENT DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXYCHO AY; CASEY HC JR; RADICE C et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 2; PP. 72-74; BIBL. 11 REF.Article

GAAS-ALX-GA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT.CASEY HC JR; PANISH MB; SCHLOSSER WO et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 322-333; BIBL. 30 REF.Article

CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY.CHO AY; DIXON RW; CASEY HC JR et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 9; PP. 501-503; BIBL. 15 REF.Article

INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAASCASEY HC JR; CHO AY; LANG DV et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3484-3491; BIBL. 16 REF.Article

REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENTNELSON RJ; WILLIAMS JS; LEAMY HJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 76-79; BIBL. 15 REF.Article

SPECIFIC CONTACT RESISTANCE FOR ALLOYED AU-ZN CONTACTS ON P-TYPE GAXIN1-XPYAS1-YCASEY HC JR; COGAN RA; FOY PW et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2933-2934; BIBL. 8 REF.Article

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