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Results 1 to 25 of 8105

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DIRECT EVIDENCE OF ELECTRON TUNNELING IN THE IONIZATION OF SPUTTERED ATOMSYU ML; LANG ND.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 2; PP. 127-130; BIBL. 13 REF.Article

SPUTTERING OF UF4 BY HIGH ENERGY HEAVY IONSMEINS CK; GRIFFITH JE; QIU Y et al.1983; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1983; VOL. 71; NO 1-2; PP. 13-33; BIBL. 33 REF.Article

THEORETICAL STUDIES ON AN EMPIRICAL FORMULA FOR SPUTTERING YIELD AT NORMAL INCIDENCEYAMAMURA Y; MATSUNAMI N; ITOH N et al.1983; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1983; VOL. 71; NO 1-2; PP. 65-86; BIBL. 24 REF.Article

ETUDE DU PROCESSUS DE PULVERISATION CATHODIQUE REACTIVEBITNER LR; DANILINA TI.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 71-73; BIBL. 6 REF.Article

ETUDE DES SYSTEMES MAGNETRONS DE PULVERISATION IONIQUE DES MATERIAUX.DANILIN BS; NEVOLIN VK; SYRCHIN VK et al.1978; FIZ. KHIM. OBRABOT. MATER.; SUN; DA. 1978; NO 2; PP. 33-39; BIBL. 13 REF.Article

PHYSICAL PROPERTIES OF SPUTTERED CHALCOGENIDE FILMS WITH A VARIABLE CONTENT OF FEBORNSTEIN A; LEWIN I; LEREAH Y et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 866-868; BIBL. 18 REF.Article

PREFERENTIAL SPUTTERING OF BINARY COMPOUNDS: A MODEL STUDYGARRISON BJ.1982; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1982; VOL. 114; NO 1; PP. 23-37; BIBL. 22 REF.Article

DEEP LEVELS STUDY IN FLOAT ZONE SI USED FOR FABRICATION OF CCD IMAGERSJASTRZEBSKI L; LAGOWSKI J.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1957-1963; BIBL. 21 REF.Article

DC MAGNETRON SYSTEM FOR CATHODE SPUTTERING.KIROV KI; IVANOV NA; ATANASOVA ED et al.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 6; PP. 237-241; BIBL. 16 REF.Article

MICROPROCESSOR AUTOMATED SPUTTERING.HUTT M.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 12; PP. 74-76Article

THE FORMATION OF TA+ SECONDARY IONS AT OXYGEN-COVERED TA SURFACESOECHSNER H; SROUBEK Z.1983; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1983; VOL. 127; NO 1; PP. 10-20; BIBL. 19 REF.Article

RELATION OF THE PHOTON YIELD FROM A SPUTTERING SOURCE TO THE POPULATION DISTRIBUTION AND EXCITATION FUNCTIONSNOWDON KJ.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 42; NO 3-4; PP. 185-190; BIBL. 25 REF.Article

NOTE ON THE TIME CONSTANT FOR PREFERENTIAL BINARY SPUTTERINGCOLLINS R.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 4-5; PP. 111-116; BIBL. 1 REF.Article

CALCUL DE LA PULVERISATION D'APRES LE MODELE DES FOCUSONSKUVAKIN MV; KHARLAMOCHKIN ES; YURASOVA VE et al.1978; FIZ. TVERD. TELA; SUN; DA. 1978; VOL. 20; NO 7; PP. 2055-2061; BIBL. 18 REF.Article

SYSTEMES A MAGNETRON POUR LA PULVERISATION IONIQUE DES MATERIAUXDANILIN BS; SYRCHIN VK.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 4; PP. 7-18; BIBL. 82 REF.Article

RF SPUTTERING OF YTTRIA ON INDIUM TIN OXIDE SUBSTRATESPANICKER MPR; ESSINGER WF.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1943-1947; BIBL. 9 REF.Article

DEPTH RESOLUTION IN SPUTTER PROFILING: EVIDENCE AGAINST THE SEQUENTIAL LAYER SPUTTERING MODELWITTMAACK K; SCHULZ F.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 2; PP. 259-270; BIBL. 21 REF.Article

CHEMICAL SPITTERING YIELDS OF SILICON RESULTING FROM F+, CFN+ (N=1,2,3) ION BOMBARDMENTMIYAKE K; TACHI S; YAGI K et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3214-3219; BIBL. 16 REF.Article

PRODUCTION DE COUCHES DURES DE NITRURE DE TITANE PAR PULVERISATION CATHODIQUE A GRAND RENDEMENTMUNZ WD; HESSBERGER G.1982; VIDES COUCHES MINCES; ISSN 0223-4335; FRA; DA. 1982; VOL. 37; NO 210; PP. 55-68; BIBL. 15 REF.Article

CONTRIBUTION OF ANISOTROPIC VELOCITY DISTRIBUTION OF RECOIL ATOMS TO SPUTTERING YIELDS AND ANGULAR DISTRIBUTIONS OF SPUTTERED ATOMSYAMAMURA Y.1981; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1981; VOL. 55; NO 1-2; PP. 49-55; BIBL. 15 REF.Article

DEEP LEVELS ASSOCIATED WITH NEAREST-NEIGHBOR SUBSTITUTIONAL DEFECT PAIRS IN GAASSANKEY OF; DOW JD.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 685-687; BIBL. 16 REF.Article

SPUTTER-INDUCED ISOTOPIC FRACTIONATION AT SOLID SURFACESWATSON CC; HAFF PK.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 691-699; BIBL. 24 REF.Article

ANOMALOUS SPUTTER YIELDS DUE TO CASCADE MIXINGWILLIAMS P.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 758-760; BIBL. 14 REF.Article

INCREASE OF SUBSTRATE TEMPERATURE IN HIGH RATE COAXIAL CYLINDRICAL MAGNETRON SPUTTERING.TSUKADA T; HOSOKAWA N; KOBAYASHI H et al.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 5; PP. 787-796; BIBL. 14 REF.Article

CIRCUITS D'ACCORD UTILISES DANS LES DISPOSITIFS POUR LA PULVERISATION IONIQUE AU MOYEN DE COURANTS HF AVEC POLARISATION DU SUBSTRATZBIKOWSKI A; KOLATOR W.1976; PRACE OSRODKA BADAWCZO-ROZWOJOW. ELEKTRON. PROZNIOW.; POLSKA; DA. 1976; VOL. 4; NO 8; PP. 37-54; ABS. ANGL. RUSSE; BIBL. 7 REF.Article

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