EFFECT OF SCREENING OF PIEZOELECTRIC PHONON FIELDS ON ABSORPTION-EDGE BROADENING IN GAAS.CELLER GK; BRAY R.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 21; PP. 1422-1425; BIBL. 16 REF.Article

PHOTOCONDUCTIVE PROBING OF ACOUSTOELECTRIC DOMAINS WITH APPLICATION TO OPTICAL IMAGE SCANNING.CELLER GK; BRAY R.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 2; PP. 53-55; BIBL. 14 REF.Article

SATURATION OF IMPURITY PHOTOCONDUCTIVITY IN N-GAAS WITH INTENSE YAG LASER LIGHT.CELLER GK; MISHRA S; BRAY R et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 5; PP. 297-299; BIBL. 12 REF.Article

NEW ROLE FOR THE LASERAUSTON DH; BROWN WL; CELLER GK et al.1979; BELL LAB. REC.; USA; DA. 1979; VOL. 57; NO 7; PP. 186-191Article

SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION.CELLER GK; POATE JM; KIMERLING LC et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 464-466; BIBL. 17 REF.Article

ANNULAR GRAIN STRUCTURES IN PULSED LASER RECRYSTALLIZED SI ON AMORPHOUS INSULATORSCELLER GK; LEAMY HJ; TRIMBLE LE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 5; PP. 425-427; BIBL. 4 REF.Article

LASER FORMATION OF PT-SI SCHOTTKY BARRIERS ON SILICONDOHERTY CJ; CRIDER CA; LEAMY HJ et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 453-458; BIBL. 8 REF.Article

SEEDED OSCILLATORY GROWTH OF SI OVER SIO₂ BY CW LASER IRRADIATIONCELLER GK; TRIMBLE LE; NG KK et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 12; PP. 1043-1045; BIBL. 11 REF.Article

EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICONBEAN JC; LEAMY HJ; POATE JM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 3; PP. 227-230; BIBL. 15 REF.Article

CHARACTERIZATION OF PULSED ND: YAG LASER-ANNEALED, ARSENIC-ION-IMPLANTED SILICONWILLIAMS JS; BROWN WL; CELLER GK et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 1038-1049; BIBL. 48 REF.Article

EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS GERMANIUMLEAMY HJ; BROWN WL; CELLER GK et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 137-139; BIBL. 28 REF.Article

DIRECT OBSERVATION OF GRAIN BOUNDARY EFFECTS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORSLEAMY HJ; FRYE RC; NG KK et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 598-600; BIBL. 19 REF.Article

EFFECTS OF GRAIN BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFET'SNG KK; CELLER GK; POVILONIS EI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 316-318; BIBL. 13 REF.Article