Anodization of n and p-GaAs in ethylene glycol-water-tartaric acid mixtureBUDA, Ma; CENGHER, D; DIACONESCU, D et al.Journal of applied electrochemistry. 1998, Vol 28, Num 7, pp 745-749, issn 0021-891XArticle

Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devicesAPERATHITIS, E; CENGHER, D; KAYAMBAKI, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 77-80, issn 0921-5107Conference Paper

SiC/Si and ain/si heterostructures for microelectromechanical RF sensorsFOERSTER, C. H; CIMALLA, V; LEBEDEV, V et al.International Semiconductor Conference. 2004, pp 371-374, isbn 0-7803-8499-7, 4 p.Conference Paper

Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescenceDIMAKIS, E; GEORGAKILAS, A; ANDROULIDAKI, M et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 476-480, issn 0022-0248, 5 p.Conference Paper

Fabrication of one-dimensional trenched GaN nanowires and their interconnectionsLEBEDEV, V; CENGHER, D; FISCHER, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 10, pp 3387-3391, issn 1862-6300, 5 p.Article

Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafersCENGHER, D; HATZOPOULOS, Z; GEORGAKILAS, A et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 754-759, issn 0022-0248, 6 p.Conference Paper

Field-compensated quaternary InAiGaN/GaN quantum wellsKALAÏTZAKIS, F; ANDROULIDAKI, M; GEORGAKILAS, A et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 2, pp 301-304, issn 0370-1972, 4 p.Conference Paper

Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bondingHATZOPOULOS, Z; CENGHER, D; DELIGEORGIS, G et al.Journal of crystal growth. 2001, Vol 227-28, pp 193-196, issn 0022-0248Conference Paper

Evaluation of performance capabilities of emitters and detectors based on a common MQW structureCENGHER, D; APERATHITIS, E; ANDROULIDAKI, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 241-244, issn 0921-5107Conference Paper