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NON-RADIATIVE RECOMBINATION CENTERS IN GAAS0.6P0.4 RED LIGHT-EMITTING DIODES.FORBES L.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 635-640; BIBL. 21 REF.Article

OPTICAL AND TEMPERATURE QUENCHING OF PHOTOCURRENT IN ZINC SELENIDE SINGLE CRYSTALS.BIRCHAK I; SERDYUK VV; CHEMERESYUK GG et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 2; PP. K145-K149; BIBL. 8 REF.Article

ZUM NACHWEIS VON MINORITAETSTRAEGER-TRAPS IN HALBLEITERN = MISE EN EVIDENCE DES PIEGES DE PORTEURS MINORITAIRES DANS LES SEMI-CONDUCTEURSLEMKE H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 539-545; ABS. ENG; BIBL. 6 REF.Article

CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR. II. RECOMBINATION CENTERS IN THE SURFACE SPACE CHARGE LAYERSAH CT; FU HS.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 1; PP. 59-70; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS.DUDECK I; KASSING R.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 1033-1036; BIBL. 11 REF.Article

CARACTERISTIQUES DES CENTRES DE RECOMBINAISON DETERMINANT LA HAUTE SENSIBILITE DES PHOTORESISTANCES EN CDSB DE TYPE NMALYUTENKO VK.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 84-89; BIBL. 8 REF.Serial Issue

DEEP-LEVEL DEFECTS IN RED GAAS1-XPX LIGHT-EMITTING DIODES.FORBES L; VAUGHN CK.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 4; PP. 534-535; BIBL. 18 REF.Article

CONCENTRATION PROFILES OF RECOMBINATION CENTERS IN SEMICONDUCTOR JUNCTIONS EVALUATED FROM CAPACITANCE TRANSIENTS.CHIH TANG SAH; NEUGROSCHEL A.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1069-1074; BIBL. 11 REF.Article

THE ROLE OF IMPURITIES IN THE FORMATION OF QUENCHED-IN RECOMBINATION CENTRES IN THERMALLY TREATED SILICON.GLINCHUK KD; LITOVCHENKO NM; MERKER R et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 2; PP. K87-K90; BIBL. 10 REF.Article

ATOMES D'IMPURETE DANS LE GERMANIUM, CENTRES DE RECOMBINAISON DES DEFAUTS D'IRRADIATION PRIMAIRESBELOBORODKO BA; VASIL'EVA ED; EMTSEV VV et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2041-2042; BIBL. 5 REF.Article

DETERMINATION DES CARACTERISTIQUES DE GENERATION - RECOMBINAISON DES STRUCTURES MDS A L'AIDE DES COURBES C(V) HORS D'EQUILIBREGORBAN AP; LITOVCHENKO VG; MOSKAL DN et al.1975; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1975; VOL. 20; NO 1; PP. 66-71; ABS. ANGL.; BIBL. 10 REF.Article

SOLAR CELL PERFORMANCE WITH AN INHOMOGENEOUS AREAL DISTRIBUTION BUT CONSTANT NUMBER OF RECOMBINATION CENTERSBELL RO.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 175-176; BIBL. 4 REF.Article

A SIMPLIFIED COMPUTATIONAL TREATMENT OF RECOMBINATION CENTERS IN THE TRANSMISSION LINE EQUIVALENT CIRCUIT MODEL OF A SEMICONDUCTOR = TRAITEMENT PAR CALCUL SIMPLIFIE DE CENTRES DE RECOMBINAISON DANS LE MODELE DE CIRCUIT EQUIVALENT EN LIGNE DE TRANSMISSION D'UN SEMICONDUCTEURGREEN MA; TEMPLE VAK; SHEWCHUN J et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 1027-1029; BIBL. 8 REF.Serial Issue

Build-up of CaF2 thermoluminescence excited by high energy X-raysCOSTA, S; DELUNAS, A; MAXIA, V et al.Journal of luminescence. 1983, Vol 28, Num 2, pp 217-220, issn 0022-2313Article

Vitesse de recombinaison par l'intermédiaire d'un centre à plusieurs niveaux (à plusieurs charges)EVSTROPOV, V. V; KISELEV, K. V; PETROVICH, I. L et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 902-912, issn 0015-3222Article

Effet de la passivation thermique sur l'efficacité des cellules solaires polycristallines du siliciumBILYALOV, R. R; CHIRVA, V. P.Geliotehnika (Taškent). 1989, Num 1, pp 3-6, issn 0130-0997, 4 p.Article

The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystalsABDINOV, A. Sh; BABAYEVA, R. F; RZAYEV, R. M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 299-303, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 5 p.Conference Paper

New exciton mechanism decreasing recombination lossesKARAZHANOV, S. ZH.Applied solar energy. 1995, Vol 31, Num 4, pp 25-32, issn 0003-701XArticle

Explanation of positive and negative PICTS peaks in SI-GaAsSCHMERLER, S; HAHN, T; HAHN, S et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S328-S332, SUP1Conference Paper

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodesHADER, J; MOLONEY, J. V; KOCH, S. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7954, issn 0277-786X, isbn 978-0-8194-8491-8, 79540H.1-79540H.8Conference Paper

EBIC/TEM STUDIES ON THE RELATION BETWEEN ELECTRICAL PROPERTIES, CRYSTALLOGRAPHIC STRUCTURE, AND INTERACTION WITH POINT DEFECTS OF EPITAXIAL STACKING FAULTS IN SILICONKITTLER M; BUGIEL E.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 1; PP. 79-89; ABS. GER; BIBL. 10 REF.Article

NEUTRALISATION DES CENTRES DE RECOMBINAISON PAR IMPLANTATION D'HYDROGENE ET D'AZOTE DANS LES STRUCTURES DIELECTRIQUES/SILICIUM.LAOU SD.1977; DGRST-7670661,; FR.; DA. 1977; PP. 1-12; H.T. 6; BIBL. 9 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

EXACT EQUIVALENT CIRCUIT MODEL FOR STEADY-STATE CHARACTERIZATION OF SEMICONDUCTOR DEVICES WITH MULTIPLE-ENERGY-LEVEL RECOMBINATION CENTERSCHAN PCH; SAH CT.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 924-936; BIBL. 41 REF.Article

THE DETERMINATION OF INTERFACIAL AND BULK PROPERTIES OF GOLD IN M.O.S. STRUCTURES USING QUASIEQUILIBRIUM AND NON-STEADY-STATE LINEAR VOLTAGE-RAMP TECHNIQUESFARAONE L; NASSIBIAN AG; SIMMONS JG et al.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 121-126; BIBL. 20 REF.Article

SPECTRAL CHARACTERISTICS OF PHOTOELECTRIC CONVERTERS WITH IRREGULAR DISTRIBUTION OF DEFECTS IN THE BASEVINOGRADOVA EB; GOLOVNER GM; GORODETSKIJ SM et al.1978; GELIOTEKHNIKA, UZBEK. S.S.R.; S.S.S.R.; DA. 1978; NO 1; PP. 13-17; BIBL. 9 REF.Article

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