ON THE FORMAL EQUIVALENCE BETWEEN A REFORMULATION OF BOHM AND BUB'S HIDDEN-VARIABLE THEORY AND SUBQUANTUM MECHANICSCEROFOLINI G.1982; LETTERE AL NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA; ISSN 0375-930X; ITA; DA. 1982; VOL. 35; NO 15; PP. 457-459; BIBL. 5 REF.Article

A UNIFIED THEORY FOR FREUNDLICH, DUBININ-RADUSHKEVICH, AND TEMKIN BEHAVIORSCEROFOLINI G.1982; J. COLLOID INTERFACE SCI.; ISSN 0021-9797; USA; DA. 1982; VOL. 86; NO 1; PP. 204-212; BIBL. 30 REF.Article

SIZE, SHAPE, GROWTH AND REPRODUCTION - TOWARDS A PHYSICAL MORPHOLOGYCEROFOLINI G.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 79; NO 3; PP. 277-299; BIBL. 1 REF.Article

A study of the ionic route for hydrogen terminations resulting after SiO₂ etching by concentrated aqueous solutions of HFCEROFOLINI, G. F.Applied surface science. 1998, Vol 133, Num 1-2, pp 108-114, issn 0169-4332Article

Derivation of the generalized Fokker-Planck equation from the Boltzmann transport equation for particles with ZitterbewegungCEROFOLINI, G. F.Il Nuovo cimento. B. 1984, Vol 79, Num 1, pp 59-66, issn 0369-3554Article

DETERMINATION OF THE STATE DENSITY AT THE SI-SIO₂ INTERFACECEROFOLINI G; FERLA G; SPADINI G et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 68; NO 2; PP. 315-332; BIBL. 22 REF.Article

Fractional statistical analysis of adsorptionCEROFOLINI, G. F.Journal of physics. A, mathematical and general. 2006, Vol 39, Num 13, pp 3195-3201, issn 0305-4470, 7 p.Article

The calorimetric detection of rare events in the cryogenic regimeCEROFOLINI, G. F.Applied physics. A, Solids and surfaces. 1990, Vol 51, Num 6, pp 467-475, issn 0721-7250Article

THE ROLE OF POINT-LIKE AND EXTENDED DEFECTS IN MOS PROCESSINGBALDI L; CEROFOLINI G; FERLA G et al.1979; SURF. TECHNOL.; CHE; DA. 1979; VOL. 8; NO 2; PP. 161-170; BIBL. 9 REF.Article

Can binuclear atoms be formed in head-on atomic impacts at moderate energy ?CEROFOLINI, G. F.Journal of physical chemistry (1952). 1992, Vol 96, Num 8, pp 3298-3302, issn 0022-3654Article

A model for the non-equilibrium pure-generation centre in siliconCEROFOLINI, G. F.Physica status solidi. A. Applied research. 1987, Vol 102, Num 1, pp 345-348, issn 0031-8965Article

Realistic limits to computation III. Climbing the third dimensionCEROFOLINI, G. F.Applied physics. A, Materials science & processing (Print). 2012, Vol 106, Num 4, pp 967-982, issn 0947-8396, 16 p.Article

Realistic limits to computation. I. Physical limitsCEROFOLINI, G. F.Applied physics. A, Materials science & processing (Print). 2007, Vol 86, Num 1, pp 23-29, issn 0947-8396, 7 p.Article

HEAVY METAL GETTERING IN SILICON-DEVICE PROCESSINGBALDI L; CEROFOLINI G; FERLA G et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 1; PP. 164-169; BIBL. 20 REF.Article

CO₂ and C₂H₄ grafting to the native defects of ion-bombarded porous silicaCEROFOLINI, G. F; MEDA, L.Applied physics. A, Materials science & processing (Print). 1999, Vol 68, Num 1, pp 29-39, issn 0947-8396Article

Clustering and melting in multilayer equilibrium adsorptionCEROFOLINI, G. F; MEDA, L.Journal of colloid and interface science. 1998, Vol 202, Num 1, pp 104-123, issn 0021-9797Article

A theory of multilayer adsorption on rough surfaces in terms of clustering and melting BET pilesCEROFOLINI, G. F; MEDA, L.Surface science. 1998, Vol 416, Num 3, pp 403-422, issn 0039-6028Article

Extracting the energy distribution functions of heterogeneous surfaces from their desorption kineticsCEROFOLINI, G. F; RE, N.Journal of colloid and interface science. 1995, Vol 174, Num 2, pp 428-440, issn 0021-9797Article

Low-temperature heat capacity of zero-gap semiconductorsCEROFOLINI, G. F; MEDA, L.Physica status solidi. B. Basic research. 1987, Vol 141, Num 2, pp K93-K95, issn 0370-1972Article

Comments on : Clustering and melting in multilayer equilibrium adsorption by Cerofolini G. et alCEROFOLINI, G. F; MEDA, L.Journal of colloid and interface science. 1999, Vol 209, Num 1, issn 0021-9797, p. 224Article

A hybrid micro-nano-molecular route for nonvolatile memoriesCEROFOLINI, G. F; MASCOLO, D.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1315-1325, issn 0268-1242, 11 p.Article

Heterolytic dissociation under hot-electron bombardment of the silanic bond at the Si-SiO₂ interfaceCEROFOLINI, G. F; RE, N.Applied physics. A, Materials science & processing (Print). 2002, Vol 74, Num 5, pp 599-603, issn 0947-8396Article

Neutral and ionized states of group III acceptors in siliconCEROFOLINI, G. F; BEZ, R.Journal of applied physics. 1987, Vol 61, Num 4, pp 1435-1441, issn 0021-8979Article

Silicon amorphization during ion implantation as a thermal phenomenonCEROFOLINI, G. F; MEDA, L.Physical review. B, Condensed matter. 1987, Vol 36, Num 10, pp 5131-5137, issn 0163-1829Article

residual non-idealities in the almost ideal silicon p-n junctionCEROFOLINI, G. F; POLIGNANO, M. L.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 3, pp 273-286, issn 0721-7250Article