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APPROXIMATE SOLUTION FOR THE REDISTRIBUTION OF IMPURITIES DURING SECOND OXIDATION.CHAKRABARTI UK.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 8; PP. 566-568; BIBL. 11 REF.Article

ELECTRICAL SWITCHING IN GERMANIUM-TELLURIUM FILMS.CHAKRABARTI UK.1976; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1976; VOL. 22; NO 7; PP. 472-473; BIBL. 3 REF.Article

FABRICATION OF A M.O.S.F.E.T. WITH "SPOXIDE" AS THE GATE DIELECTRIC HAVING LOW INTERFACE STATE DENSITYCHAKRABARTI UK.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 24; PP. 754-756; BIBL. 14 REF.Article

A MODEL FOR DOPED-OXIDE SOURCE DIFFUSION WITH A CHEMICAL REACTION AT THE SILICON-SILICON DIOXIDE INTERFACE.CHAKRABARTI UK.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 111-112; BIBL. 7 REF.Article

A NEW PROCESS OF OXIDE GROWTH ON SILICON.CHAKRABARTI UK; JOSHI V.1976; J. INDIAN INST. SCI.; INDIA; DA. 1976; VOL. 58; NO 1; PP. 28-35; BIBL. 7 REF.Article

SETTLEMENT OF RECTANGULAR FOUNDATIONS ON OVERCONSOLIDATED CLAYS.NAYAK M; CHAKRABARTI UK.1975; SOILS FOUND.; JAP.; DA. 1975; VOL. 15; NO 1; PP. 81-88; BIBL. 10 REF.; 5 ILL.Article

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