ON THE THEORY OF ELECTRON DIFFUSION UNDER A TEMPERATURE GRADIENT IN DEGENERATE SEMICONDUCTORS HAVING NON-PARABOLIC ENERGY BANDS.CHAKRAVARTI AN.1975; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1975; VOL. 25; NO 7; PP. 778-784; BIBL. 7 REF.Article

INFLUENCE OF BAND NON-PARABOLICITY ON THE OSCILLATORY DEPENDENCE OF THE DIFFUSIVITY-MOBILITY RATIO IN DEGENERATE SEMICONDUCTORS ON MAGNETIC QUANTIZATION.CHAKRAVARTI AN; CHOWDHURY AK.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 79; NO 1; PP. K31-K34; BIBL. 10 REF.Article

TEMPERATURE DEPENDENCE OF THE THRESHOLD CURRENT IN ELECTRON-BEAM-PUMPED LASERS USING N-TYPE GAAS.PARUI DP; CHAKRAVARTI AN.1973; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1973; VOL. 11; NO 8; PP. 588-590; BIBL. 13 REF.Article

EFFECT OF A LONGITUDINAL MAGNETIC FIELD ON THE POWER OUTPUT OF SPONTANEOUS EMISSION FROM INSB JUNCTION LASERS OPERATED AT VERY LOW TEMPERATURESCHAKRAVARTI AN; PARUI DP.1972; INDIAN J. PURE APPL.; INDIA; DA. 1972; VOL. 10; NO 9; PP. 686-689; BIBL. 8 REF.Serial Issue

GENERALIZED EINSTEIN RELATION - A SUGGESTED METHOD FOR EXPERIMENTAL VERIFICATIONNAG BR; CHAKRAVARTI AN.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 67; NO 2; PP. K113-K117; BIBL. 21 REF.Article

INFLUENCE OF BAND NON-PARABOLICITY ON THE OSCILLATORY DEPENDENCE OF THE DEBYE SCREENING LENGTH IN DEGENERATE SEMICONDUCTORS ON MAGNETIC QUANTIZATION.CHAKRAVARTI AN; CHOWDHURY AK.1977; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1977; VOL. 27; NO 10; PP. 1161-1163; BIBL. 7 REF.Article

INFLUENCE OF BAND TAILS ON THE DIFFUSIVITY-MOBILITY RATIO IN HIGHLY DEGENERATE SEMICONDUCTORSCHAKRAVARTI AN; PARUI DP.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 43; NO 1; PP. 60; BIBL. 4 REF.Serial Issue

CURRENT LIMITATIONS AND MAXIMUM STIMULATED OUTPUT AS FUNCTIONS OF THE LASER LENGTH IN SOLUTION-GROWN GAAS JUNCTION LASERS OPERATED CONTINOUSLY AT 77^OKCHAKRAVARTI AN; PARUI DP.1972; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1972; VOL. 10; NO 8; PP. 610-613; BIBL. 14 REF.Serial Issue

EFFECTS OF QUANTIZING MAGNETIC FIELD ON THE CAPACITANCE OF MOS STRUCTURES OF SMALL-GAP SEMICONDUCTORS UNDER STRONG SURFACE FIELDSCHOUDHURY DR; CHOWDHURY AK; CHAKRAVARTI AN et al.1980; PHYS. SCR.; ISSN 0031-8949; SWE; DA. 1980; VOL. 22; NO 6; PP. 656-658; BIBL. 11 REF.Article

INFLUENCE OF SURFACE ELECTRIC FIELD ON THE MOS CAPACITANCE OF N-CHANNEL INVERSION LAYERS IN SMALL GAP SEMICONDUCTORSCHOUDHURY DR; CHOWDHURY AK; CHAKRAVARTI AN et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. K69-K74; BIBL. 10 REF.Article

DEPENDENCE OF THE POWER EFFICIENCY OF CW (AT 77^OK) GAAS JUNCTION LASERS ON DRIVING CURRENT & LASER LENGTHCHAKRAVARTI AN; BISWAS SN; RAKSHIT S et al.1972; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1972; VOL. 10; NO 2; PP. 128-130; BIBL. 11 REF.Serial Issue

GENERALIZED EINSTEIN RELATION FOR THE DIFFUSIVITY-MOBILITY RATIO IN MULTI-BAND DEGENERATE SEMICONDUCTORSNAG BR; CHAKRAVARTI AN; BASU PK et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 1; PP. K75-K80; BIBL. 24 REF.Article

EFFECT OF WAVE CONFINEMENT ON THE THRESHOLD CURRENT IN HETEROSTRUCTURE INJECTION LASERS.RAKSHIT S; BISWAS SN; CHAKRAVARTI AN et al.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 36; NO 5; PP. 593-599; BIBL. 11 REF.Article

DOPING DEPENDACE OF PHOTON YIELD AS A FUNCTION OF EXCITATION ENERGY IN OPTICALLY-EXCITED N-TYPE GAAS AT 300^OKBISWAS SN; RAKSHIT S; CHAKRAVARTI AN et al.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 1; PP. 135-138; BIBL. 10 REF.Serial Issue

ON THE MODIFICATION OF THE EINSTEIN RELATION FOR SEMICONDUCTOR INVERSION LAYERS.CHOUDHURY DR; BASU PK; CHAKRAVARTI AN et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 1; PP. K85-K88; BIBL. 9 REF.Article

ON THE GATE-CONTROLLED SURFACE CAPACITANCE OF MOS STRUCTURES OF SI HAVING N-CHANNEL INVERSION LAYERSCHOUDHURY DR; CHOWDHURY AK; CHAKRAVARTI AN et al.1980; CZECH. J. PHYS.; ISSN 0011-4626; CSK; DA. 1980; VOL. 30; NO 10; PP. 1157-1160; BIBL. 5 REF.Article

ON THE MODIFICATION OF THE EINSTEIN RELATION FOR SEMICONDUCTOR INVERSION LAYERS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD.CHOUDHURY DR; CHOWDHURY AK; CHAKRAVARTI AN et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO L; PP. K111-K115; BIBL. 7 REF.Article

EFFECT OF SIZE QUANTIZATION ON THE EINSTEIN RELATION IN ULTRATHIN FILMS OF N-CD₃AS₂CHAKRAVARTI AN; GHATAK KP; GHOSH KK et al.1981; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. 609-615; ABS. GER; BIBL. 20 REF.Article

EFFECT OF SIZE QUANTIZATION ON THE EINSTEIN RELATION IN ULTRATHIN FILMS OF SEMICONDUCTORSCHAKRAVARTI AN; GHATAK KP; DHAR A et al.1981; ACTA PHYS. POL., A; ISSN 0587-4246; POL; DA. 1981; VOL. 60; NO 1; PP. 151-154; BIBL. 8 REF.Article

MAGNETIC SUSCEPTIBILITY OF ELECTRONS IN INVERSION LAYERS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELDROY CHOUDHURY D; DHOWDHURY AK; GHATAK KP et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 2; PP. K141-K145; BIBL. 9 REF.Article

ON THE MODIFICATION OF THE EINSTEIN RELATION FOR INVERSION LAYERS ON NARROW-GAP SEMICONDUCTORSCHAKRAVARTI AN; CHOWDHURY AK; GHATAK KP et al.1980; ACTA PHYS. POL., A; ISSN 0587-4246; POL; DA. 1980; VOL. 52; NO 2; PP. 251-255; BIBL. 9 REF.Article

EFFECT OF SIZE QUANTIZATION ON THE ELECTRONIC HEAT CAPACITY IN ULTRATHIN FILMS OF NON-PARABOLIC SEMICONDUCTORSGHATAK KP; GHOSH KK; MUKHERJEE HM et al.1982; PHYS. STATUS SOLIDI(B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 110; NO 1; PP. 323-330; ABS. GER; BIBL. 14 REF.Article

EFFECT OF MAGNETIC QUANTIZATION ON THE SURFACE CAPACITANCE OF MOS FIELD-EFFECT DEVICESROY CHOUDHURY D; CHOWDHURY AK; CHAKRAVARTI AN et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. K51-K54; BIBL. 7 REF.Article

ON THE MODIFICATION OF THE EINSTEIN RELATION FOR INVERSION LAYERS ON NARROW GAP SEMICONDUCTORS IN A STRONG ELECTRIC FIELDCHAKRAVARTI AN; CHOWDHURY AK; GHATAK KP et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. K211-K215; BIBL. 9 REF.Article

TEMPERATURE DEPENDENCE OF THE DEBYE SCREENING LENGTH IN HEAVILY DOPED SEMICONDUCTORS HAVING GAUSSIAN BAND-TAILSGHATAK KP; CHOWDHURY AK; GHOSH S et al.1980; CZECH. J. PHYS.; ISSN 0011-4626; CSK; DA. 1980; VOL. 30; NO 8; PP. 925-929; BIBL. 8 REF.Article