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au.\*:("CHAMBERLAIN SG")

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NEW PROFILED SILICON PHOTODETECTOR FOR IMPROVED SHORT-WAVELENGTH QUANTUM EFFICIENCYCHAMBERLAIN SG.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7228-7231; BIBL. 13 REF.Article

A MODEL FOR NUMERICAL SIMULATION OF NONSTATIONARY SONAR REVERBERATION USING LINEAR SPECTRAL PREDICTIONCHAMBERLAIN SG.1983; IEEE JOURNAL OF OCEANIC ENGINEERING; ISSN 0364-9059; USA; DA. 1983; VOL. 8; NO 1; PP. 21-36; BIBL. 24 REF.Article

THREE-DIMENSIONAL SIMULATION OF VLSI MOSFET'S: THE THREE-DIMENSIONAL SIMULATION PROGRAM WATMOSHUSAIN A; CHAMBERLAIN SG.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 261-268; BIBL. 25 REF.Article

CALIBRATED MODEL FOR THE SUBTHRESHOLD OPERATION OF A SHORT CHANNEL MOSFET INCLUDING SURFACE STATESSCOTT DB; CHAMBERLAIN SG.1979; IEEE J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 633-644; BIBL. 16 REF.Article

EXPERIMENTAL CONFIRMATION OF AN ANALYTICAL MODEL FOR CHARGE TRANSFER IN CHARGE-COUPLED DEVICES.SCOTT DB; CHAMBERLAIN SG.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 1; PP. 45-50; BIBL. 12 REF.Article

EXTRACTION OF WATER QUALITY INFORMATION FROM FIELD DATA USING MATHEMATICAL MODELSCHAMBERLAIN SG; GRIMSRUD GP.1972; IN: OCEAN 72 IEEE INT. CONF. ENG. OCEAN ENVIRON. REC. NEWPORT, R.I., 1972; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1972; PP. 397-401Conference Proceedings

NOVEL-N JUNCTION POLYSILICON DUAL-GATE MOSFET FOR ANALOGUE APPLICATIONSANAND KV; CHAMBERLAIN SG.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 2; PP. 58-60; BIBL. 5 REF.Article

DESIGN AND REALIZATION OF A TWO-LEVEL 64K BYTE CCD MEMORY SYSTEM FOR MICROCOMPUTER APPLICATIONSINKOL RJ; CHAMBERLAIN SG.1980; I.E.E.E. TRANS. COMPUTERS; USA; DA. 1980; VOL. 29; NO 2; PP. 195-199; BIBL. 5 REF.Article

MTF SIMULATION INCLUDING TRANSMITTANCE EFFECTS AND EXPERIMENTAL RESULTS OF CHARGE-COUPLED IMAGERSCHAMBERLAIN SG; HARPER DH.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 2; PP. 145-154; BIBL. 18 REF.Article

A MULTIPLE-GATE CCD-PHOTODIODE SENSOR ELEMENT FOR IMAGING ARRAYSWHITE JM; CHAMBERLAIN SG.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 1; PP. 51-57; BIBL. 14 REF.Article

TRANSIENT ANALYSIS OF ELECTRICAL CHARGE INJECTION INTO CHARGE-COUPLED DEVICES.CHAMBERLAIN SG; WOO BY.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 6; PP. 569-586; BIBL. 26 REF.Article

A NOVEL P-N JUNCTION POLYCRYSTALLINE SILICON GATE MOSFETANAND KV; CHAMBERLAIN SG.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 287-298; BIBL. 9 REF.Article

MODELING AND EXPERIMENTAL SIMULATION OF THE LOW-FREQUENCY TRANSFER INEFFICIENCY IN BUCKET-BRIGADE DEVICESSCOTT DB; CHAMBERLAIN SG.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 405-414; BIBL. 13 REF.Article

SHORT-CHANNEL EFFECTS ON THE INPUT STAGE OF SURFACE-CHANNEL CCD'S.ELSAID MH; CHAMBERLAIN SG.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 9; PP. 1164-1171; BIBL. 15 REF.Article

THREE-DIMENSIONAL SIMULATION OF VLSI MOSFET'S: THE THREE-DIMENSIONAL SIMULATION PROGRAM WATMOSASIM HUSAIN; CHAMBERLAIN SG.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 631-638; BIBL. 25 REF.Article

BULK CHARGE EFFECTS IN VLSI MOSFETSKUMAR R; CHAMBERLAIN SG.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1071-1074; BIBL. 7 REF.Article

A MULTIPLE-GATE CCD-PHOTODIODE SENSOR ELEMENT FOR IMAGING ARRAYSWHITE JM; CHAMBERLAIN SG.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 2; PP. 125-131; BIBL. 14 REF.Article

MODELLING OF ELECTRICAL CHARGE INJECTION INTO CHARGE-COUPLED DEVICES.CHAMBERLAIN SG; WOO BY; SCOTT DB et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 1; PP. 263-275; ABS. ALLEM.; BIBL. 26 REF.Article

TWO-DIMENSIONAL SIMULATION OF A HIGH-VOLTAGE P-I-N DIODE WITH OVERHANGING METALLIZATIONRAJENDRA KUMAR; ROULSTON DJ; CHAMBERLAIN SG et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 5; PP. 534-540; BIBL. 20 REF.Article

DESIGN OF LOW-NOISE BIPOLAR TRANSIMPEDANCE PREAMPLIFIERS FOR OPTICAL RECEIVERSEL DIWANY MH; ROULSTON DJ; CHAMBERLAIN SG et al.1981; IEE PROC., G; ISSN 0143-7089; GBR; DA. 1981; VOL. 128; NO 6; PP. 299-306; BIBL. 8 REF.Article

PIECEWISE LINEAR CAD MODEL MODEL AVALANCHE PHOTODETECTORSEL DIWANY MH; ROULSTON DJ; CHAMBERLAIN SG et al.1979; PROC. I.E.E.E.; USA; DA. 1979; VOL. 67; NO 8; PP. 1163-1165; BIBL. 5 REF.Article

SPECTRAL RESPONSE LIMITATION MECHANISMS OF A SHALLOW JUNCTION N+P PHOTODIODECHAMBERLAIN SG; ROULSTON DJ; DESAI SP et al.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 1; PP. 167-172; BIBL. 14 REF.Article

SOME PROPERTIES CONCERNING THE A.C. IMPEDANCE OF P-I-N AND P-N-N+ DIODES.VARSHNEY RC; ROULSTON DJ; CHAMBERLAIN SG et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 699-706; BIBL. 10 REF.Article

DETERMINATION OF NEUTRAL REGION CARRIER CONCENTRATIONS IN P-N JUNCTIONS USING QUASI FERMI LEVELSVARSHNEY RC; ROULSTON DJ; CHAMBERLAIN SG et al.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 1; PP. 15-23; BIBL. 5 REF.Serial Issue

THE DEVELOPMENT AND APPLICATION OF THE CORRELATION METHOD FOR NOISE SPECTRAL INTENSITY MEASUREMENTS IN SAMPLED-DATA CIRCUITSABDEL ATY ZOHDY HS; CHAMBERLAIN SG.1982; IEEE TRANS. INSTRUM. MEAS.; ISSN 0018-9456; USA; DA. 1982; VOL. 31; NO 1; PP. 9-12; BIBL. 9 REF.Article

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