SOME PROPERTIES OF PLASMA-GROWN GAAS OXIDESCHANG RPH.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 89-106; BIBL. 29 REF.Article

PLASMA ENHANCED BEAM DEPOSITION OF THIN DIELECTRIC FILMSCHANG RPH; DARACK S.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 272-274; BIBL. 2 REF.Article

NONLINEAR WAVE EFFECTS IN LABORATORY PLASMAS. A COMPARISON BETWEEN THEORY AND EXPERIMENTPORKOLAB M; CHANG RPH.1978; REV. MOD. PHYS.; USA; DA. 1978; VOL. 50; NO 4; PP. 745-795; BIBL. 4 P.Article

PLASMA OXIDATION OF GAAS.CHANG RPH; SINHA AK.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 1; PP. 56-58; BIBL. 9 REF.Article

A NEW METHOD OF FABRICATING GALLIUM ARSENIDE MOS DEVICES.CHANG RPH; COLEMAN JJ.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 5; PP. 332-333; BIBL. 9 REF.Article

EXPERIMENTAL OBSERVATION OF THE HARRIS-TYPE ION BEAM CYCLOTRON INSTABILITY.CHANG RPH; PORKOLAB M.1976; FUSION NUCL.; AUTR.; DA. 1976; VOL. 16; NO 1; PP. 142-144; BIBL. 6 REF.Article

A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GAAS AND ITS PLASMA-GROWN OXIDETHEETEN JB; ASPNES DE; CHANG RPH et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 6097-6102; BIBL. 17 REF.Article

PARAMETRIC EXCITATION OF ELECTROSTATIC ION CYCLOTRON WAVES IN MULTI-ION-SPECIES PLASMA.ONO M; PORKOLAB M; CHANG RPH et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 17; PP. 962-966; BIBL. 8 REF.Article

NONLINEAR EVOLUTION OF THE ELECTRON-BEAM-PLASMA INSTABILITY.IKEZI H; CHANG RPH; STERN RA et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 17; PP. 1047-1051; BIBL. 9 REF.Article

PARAMETRIC EXCITATION OF ION QUASI-MODE BY THE PUMP NEAR THE ION CYCLOTRON FREQUENCYONO M; PORKOLAB M; CHANG RPH et al.1980; PHYS. FLUIDS; ISSN 0031-9171; USA; DA. 1980; VOL. 23; NO 8; PP. 1675-1681; BIBL. 13 REF.Article

PLASMA-GROWN OXIDE ON GAAS. SEMIQUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER SPECTROSCOPY AND NEUTRON ACTIVATION ANALYSIS.CHANG CC; CHANG RPH; MURARKA SP et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 3; PP. 481-487; BIBL. 13 REF.Article

PLASMA OXIDATION OF ALUMINUM FILM ON GAAS. A STUDY BY AUGER SPECTROSCOPY AND TRANSMISSION ELECTRON MICROSCOPY.CHANG RPH; CHANG CC; SHENG TT et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 12; PP. 657-659; BIBL. 9 REF.Article

IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GAAS OXIDES WITH SPECTROSCOPIC ELLIPSOMETRYTHEETEN JB; CHANG RPH; ASPNES DE et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 378-385; BIBL. 18 REF.Article

SURFACE ETCHING KINETICS OF HYDROGEN PLASMA ON INPTU CW; CHANG RPH; SCHLIER AR et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 80-82; BIBL. 4 REF.Article

MULTIDIELECTRICS FOR GAAS MIS DEVICES USING COMPOSITION-GRADED AL_XGA_1-XAS AND OXIDIZED ALASTSANG WT; OLMSTEAD M; CHANG RPH et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 6; PP. 408-410; BIBL. 10 REF.Article

APPLICATION OF SELECTIVE CHEMICAL REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAASCHANG RPH; COLEMAN JJ; POLAK AJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 237-238; BIBL. 8 REF.Article

ANALYSIS OF PLASMA-GROWN GAAS OXIDE FILMS.KAUFFMAN RL; FELDMAN LC; POATE JM et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 7; PP. 319-321; BIBL. 11 REF.Article

THE EFFECT OF INTERFACE ARSENIC DOMAINS ON THE ELECTRICAL PROPERTIES OF GAAS MOS STRUCTURES.CHANG RPH; SHENG TT; CHANG CC et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 4; PP. 341-342; BIBL. 12 REF.Article