A vertical integration of GaAs/GaAlAs LED and vertical FET with embedded Schottky electrodesCHANG-HEE HONG; CHANG-TAE KIM; YOUNG-SE KWON et al.Japanese journal of applied physics. 1990, Vol 29, Num 12, pp L2427-L2429, issn 0021-4922, 2Article

A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor depositionCHANG-TAE KIM; CHANG-HEE HONG; YOUNG-SE KWON et al.Japanese journal of applied physics. 1991, Vol 30, Num 12B, pp 3828-3832, issn 0021-4922, 1Article

Selective area growth of GaAs with semiconductor-metal-semiconductor structures using pulsed-mode operation of MOCVDCHANG-HEE HONG; CHANG-TAE KIM; YOUNG-SE KWON et al.Journal of electronic materials. 1990, Vol 19, Num 10, pp 1141-1144, issn 0361-5235Article

AlGaAs/GaAs heterojunction bipolar transistors with reduced base-collector capacitance fabricated using selective metalorganic chemical vapor depositionJEAON-HWAN SON; CHANG-TAE KIM; SONG-CHEOL HONG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1085-1088, issn 0021-4922, 1Conference Paper

Numerical simulation on the device structure of GaAs floated electron channel field-effect transistorYOON-JONG LEE; CHANG-TAE KIM; SONG-CHEOL HONG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1228-1231, issn 0021-4922, 1Conference Paper

A GaAs junction-gate FECFET(J-FECFET) for the digital integrated circuitsCHANG-TAE KIM; YOON-JONG LEE; YOUNG-SE KWON et al.Japanese journal of applied physics. 1993, Vol 32, Num 1B, pp 556-559, issn 0021-4922, 1Conference Paper