au.\*:("CHAO HH")
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A DEVICE MODEL FOR BURIED-CHANNEL CCD'S AND MOSFET'S WITH GAUSSIAN IMPURITY PROFILESTAYLOR GW; CHATTERJEE PK; CHAO HH et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 199-208; BIBL. 11 REF.Article
ANALYSIS OF RADIATION AND SCATTERING BY ARBITRARY CONFIGURATIONS OF THIN WIRESKUO DC; CHAO HH; MAUTZ JR et al.1972; I.E.E.E. TRANS. ANTENNAS PROPAG.; U.S.A.; DA. 1972; VOL. 20; NO 6; PP. 814-815; BIBL. 8 REF.Serial Issue
ONE-MICRON POLYCIDE (WSI2 ON POLY-SI) MOSFET TECHNOLOGYTSAI MY; CHAO HH; EPHRATH LM et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 10; PP. 2209-2214; BIBL. 20 REF.Article
A 34 MU M2 DRAM CELL FABRICATED WITH A 1 MU M SINGLE-LEVEL POLYCIDE FET TECHNOLOGYCHAO HH; DENNARD RH; MON YEN TSAI et al.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 5; PP. 499-505; BIBL. 11 REF.Article