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Results 1 to 25 of 271773

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THERMOGENERATION DE LA CHARGE DANS LES STRUCTURES DE DISPOSITIFS A COUPLAGE PAR CHARGE AVEC DES INTERVALLES DOPESKLYAUS KH I; KOVAKEVSKAYA TE; SERDYUK YU N et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 6; PP. 520-525; BIBL. 4 REF.Article

OBSERVATION OF THERMAL CARRIER GENERATION IN BURIED CHANNEL CHARGE COUPLED DEVICESMAYER GJ.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 546-547; BIBL. 3 REF.Article

DYNAMIC PACKET SPLITTING IN CHARGE DOMAIN DEVICESBENCUYA SS; STECKL AJ; VOGELSONG TL et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 9; PP. 268-270; BIBL. 4 REF.Article

INVERSION DE LA CHARGE DANS LES DISPOSITIFS A COUPLAGE PAR CHARGEAMINEV AM; SULTANOV A KH; TIMOFEEV AL et al.1980; RADIOTEKHNIKA; SUN; DA. 1980; VOL. 35; NO 6; PP. 10-14; BIBL. 5 REF.Article

REGIME OF CONTACT EMISSION LIMITED CURRENT WITH WEAK HARMONIC DISTORTION OF STEADY BIAS.ZYUGANOV AN; PISMENNYI YG; SVECHNIKOV SV et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 631-638; ABS. RUSSE; BIBL. 17 REF.Article

OBSERVATION OF THERMALLY GENERATED CARRIER IN CHARGE COUPLED DEVICES.BABA T; SASAKI R.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1369-1378; BIBL. 8 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

DETERMINATION OF THE PARAMETERS OF IMPURITY CENTRES FROM THE THERMALLY STIMULATED CURRENT OF THE P-N JUNCTION SPACE CHARGE REGION.KOTINA IM; NIVIKOV SR; PIROZHKOVA TI et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 1; PP. 397-401; ABS. RUSSE; BIBL. 15 REF.Article

THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODESLEE K; NUSSBAUM A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 655-660; BIBL. 12 REF.Article

LA DISTRIBUTION QUANTIQUE DES PORTEURS DE CHARGE MOBILES DANS UN DISPOSITIF COUPLE PAR LA CHARGE EN SURFACEIONESCU M.1977; STUD. CERC. FIZ.; ROMAN.; DA. 1977; VOL. 29; NO 9; PP. 893-896; ABS. ANGL.; BIBL. 7 REF.Article

ELECTRICAL RESPONSE OF MATERIALS WITH RECOMBINING SPACE CHARGE.MACDONALD JR; FRANCESCHETTI DR; MEAUDRE R et al.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 9; PP. 1459-1471; BIBL. 23 REF.Article

A SURFACE DIFFUSE SCATTERING MODEL FOR THE MOBILITY OF ELECTRONS IN SURFACE CHARGE COUPLED DEVICES.IONESCU M.1977; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1977; VOL. 22; NO 10; PP. 1039-1043; ABS. FR.; BIBL. 11 REF.Article

CHARGE-COUPLED DEVICE STRUCTURES FOR VLSI MEMORIESCHATTERJEE PK; TAYLOR GW; TASCH AF JR et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 871-881; BIBL. 19 REF.Article

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

CHARGE-TRANSFER NOIRE THEORY FOR SURFACE-CHANNEL CHARGE-COUPLED DEVICESOMURA Y; OHWADA K.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1816-1824; BIBL. 16 REF.Article

MULTIPLE BURIED CHANNEL CHARGE-COUPLED DEVICECHAKRAVARTI SN; DAS P.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 747-753; BIBL. 14 REF.Article

THEORETICAL ANALYSIS OF CHARGE TRANSFER LOSS ARISING FROM INTERFACE STATES IN CHARGE COUPLED DEVICES.HEALD DL.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 657-663; BIBL. 10 REF.Article

MODELISATION SUR ORDINATEUR DE L'EFFET DE LA REDISTRIBUTION DE LA CHARGE DANS LES DISPOSITIFS A COUPLAGE PAR CHARGE ANALOGIQUES AVEC PORTES FLOTTANTESKARAKHANYAN EH R; KAPERKO AF.1982; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1982; VOL. 25; NO 6; PP. 39-46; BIBL. 5 REF.Article

TECHNIQUES FOR EVALUATING CHARGE COUPLED IMAGERS.CAMPANA SB.1977; OPT. ENGNG; U.S.A.; DA. 1977; VOL. 16; NO 3; PP. 267-274; BIBL. 8 REF.Article

LINEAR DETECTION OF CHARGE C.C.D. WITH A DUAL GATE.HOBSON GS; LONGSTONE R; TOZER RC et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 13; PP. 400-402; BIBL. 2 REF.Article

WHICH SOLID STATE IMAGER: CID CCD.SACHS FA; SAVOYE ED.1978; ELECTRO-OPT. SYST. DESIGN; USA; DA. 1978; VOL. 10; NO 8; PP. 70-75Article

EFFECT OF ELECTRON-ELECTRONSCATTERING ON MOBILITY IN GAASCHATTOPADHYAY D.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3330-3332; BIBL. 13 REF.Article

VELOCITY AUTO-CORRELATION AND HOT-ELECTRON DIFFUSION CONSTANT IN GAAS AND INPDEBROY M; NAG BR.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 28; NO 3; PP. 195-204; BIBL. 28 REF.Article

EXTENSIONS OF THE SCHARFETTER-GUMMEL APPROACH TO CHARGE TRANSFERLAVINE JP; BURKEY BC.1980; SOLID. STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 75-77; BIBL. 8 REF.Article

BEHANDLUNG DER LADUNGSUEBERTRAGUNG IM 2-PHASEN-OBERFLAECHEN-CCD MIT HILFE DIGITALER SIMULATION = ETUDE DES TRANSFERTS DE CHARGES DANS LES DISPOSITIFS A COUPLAGE DE CHARGE (CCD) A DEUX PHASES PAR SIMULATION SUR ORDINATEURRHEIN D; UHLMANN H.1980; NACHR.-TECH., ELEKTRON.; DDR; DA. 1980; VOL. 30; NO 4; PP. 160-164; BIBL. 4 REF.Article

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