DYNAMIC PACKET SPLITTING IN CHARGE DOMAIN DEVICESBENCUYA SS; STECKL AJ; VOGELSONG TL et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 9; PP. 268-270; BIBL. 4 REF.Article

INVERSION DE LA CHARGE DANS LES DISPOSITIFS A COUPLAGE PAR CHARGEAMINEV AM; SULTANOV A KH; TIMOFEEV AL et al.1980; RADIOTEKHNIKA; SUN; DA. 1980; VOL. 35; NO 6; PP. 10-14; BIBL. 5 REF.Article

REGIME OF CONTACT EMISSION LIMITED CURRENT WITH WEAK HARMONIC DISTORTION OF STEADY BIAS.ZYUGANOV AN; PISMENNYI YG; SVECHNIKOV SV et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 631-638; ABS. RUSSE; BIBL. 17 REF.Article

OBSERVATION OF THERMALLY GENERATED CARRIER IN CHARGE COUPLED DEVICES.BABA T; SASAKI R.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1369-1378; BIBL. 8 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

DETERMINATION OF THE PARAMETERS OF IMPURITY CENTRES FROM THE THERMALLY STIMULATED CURRENT OF THE P-N JUNCTION SPACE CHARGE REGION.KOTINA IM; NIVIKOV SR; PIROZHKOVA TI et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 1; PP. 397-401; ABS. RUSSE; BIBL. 15 REF.Article

ELECTRICAL RESPONSE OF MATERIALS WITH RECOMBINING SPACE CHARGE.MACDONALD JR; FRANCESCHETTI DR; MEAUDRE R et al.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 9; PP. 1459-1471; BIBL. 23 REF.Article

A SURFACE DIFFUSE SCATTERING MODEL FOR THE MOBILITY OF ELECTRONS IN SURFACE CHARGE COUPLED DEVICES.IONESCU M.1977; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1977; VOL. 22; NO 10; PP. 1039-1043; ABS. FR.; BIBL. 11 REF.Article

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

CHARGE-TRANSFER NOIRE THEORY FOR SURFACE-CHANNEL CHARGE-COUPLED DEVICESOMURA Y; OHWADA K.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1816-1824; BIBL. 16 REF.Article

MULTIPLE BURIED CHANNEL CHARGE-COUPLED DEVICECHAKRAVARTI SN; DAS P.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 747-753; BIBL. 14 REF.Article

THEORETICAL ANALYSIS OF CHARGE TRANSFER LOSS ARISING FROM INTERFACE STATES IN CHARGE COUPLED DEVICES.HEALD DL.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 657-663; BIBL. 10 REF.Article

MODELISATION SUR ORDINATEUR DE L'EFFET DE LA REDISTRIBUTION DE LA CHARGE DANS LES DISPOSITIFS A COUPLAGE PAR CHARGE ANALOGIQUES AVEC PORTES FLOTTANTESKARAKHANYAN EH R; KAPERKO AF.1982; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1982; VOL. 25; NO 6; PP. 39-46; BIBL. 5 REF.Article

TECHNIQUES FOR EVALUATING CHARGE COUPLED IMAGERS.CAMPANA SB.1977; OPT. ENGNG; U.S.A.; DA. 1977; VOL. 16; NO 3; PP. 267-274; BIBL. 8 REF.Article

LINEAR DETECTION OF CHARGE C.C.D. WITH A DUAL GATE.HOBSON GS; LONGSTONE R; TOZER RC et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 13; PP. 400-402; BIBL. 2 REF.Article

WHICH SOLID STATE IMAGER: CID CCD.SACHS FA; SAVOYE ED.1978; ELECTRO-OPT. SYST. DESIGN; USA; DA. 1978; VOL. 10; NO 8; PP. 70-75Article

MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article

ONE AND A HALF PHASE OPERATION OF A CCD DELAY LINEMORANDI C; MASETTI G.1979; ALTA FREQ.; ITA; DA. 1979; VOL. 48; NO 7; PP. 432-439; BIBL. 3 REF.Article

NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article

PARTICULARITES DU CLAQUAGE ELECTRIQUE DANS LES DISPOSITIFS A COUPLAGE PAR CHARGEGERTEL VA; KANDYBA PE; LAVRENOV AA et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 5; PP. 463-466; BIBL. 5 REF.Article

COMPUTER MODEL AND CHARGE TRANSPORT STUDIES IN SHORT GATE CHARGE-COUPLED DEVICES.ELSAID MH; CHAMBERLAIN SG; WATT LAK et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 1; PP. 61-69; BIBL. 33 REF.Article

USE OF THE WKB AND VARIATIONAL METHODS TO CALCULATE THE FINAL STAGES OF CHARGE TRANSFER IN A CCD.KOSAI K; SINGER BM.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 705-709; BIBL. 10 REF.Article

COMPARISON OF CHARGE LOSS IN CCDS OPERATED IN 2-PHASE AND 4-PHASE MODESFELTL H; LASSMANN R.1980; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DEU; DA. 1980; VOL. 9; NO 1; PP. 11-15; BIBL. 11 REF.Article

CALCUL DES PARAMETRES D'EXTREMUMS DANS LA REGION DU SAUT DU COURANTZYUGANOV AN; SVECHNIKOV SV; TKHORIK A YU et al.1977; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1977; VOL. 22; NO 3; PP. 370-375; ABS. ANGL.; BIBL. 15 REF.Article

ANALYSIS OF THE EFFECTIVE TRANSFER LOSSES IN A LOW-LOSS CCDSAUER DJ.1979; R.C.A. REV.; USA; DA. 1979; VOL. 40; NO 3; PP. 278-294; BIBL. 4 REF.Article