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THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODESLEE K; NUSSBAUM A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 655-660; BIBL. 12 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

EFFECT OF ELECTRON-ELECTRONSCATTERING ON MOBILITY IN GAASCHATTOPADHYAY D.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3330-3332; BIBL. 13 REF.Article

VELOCITY AUTO-CORRELATION AND HOT-ELECTRON DIFFUSION CONSTANT IN GAAS AND INPDEBROY M; NAG BR.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 28; NO 3; PP. 195-204; BIBL. 28 REF.Article

THEORY OF MULTIPLE TRAPPING.SCHMIDLIN FW.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 7; PP. 451-453; BIBL. 12 REF.Article

OUTDIFFUSION OF RECOMBINATION CENTERS FROM THE SUBSTRATE INTO LPE LAYERS: GAASJASTRZEBSKI L; LAGOWSKI J; GATOS HC et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2231-2234; BIBL. 26 REF.Article

MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article

NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article

TRAPPING PARAMETERS FROM ISOTHERMAL DECAY OF THERMOLUMINESCENCELILLEY E; MOHARIL SV.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 3; PP. L17-L19; BIBL. 7 REF.Article

EFFECTS OF STOICHIOMETRY ON THERMAL STABILITY OF UNDOPED SEMI-INSULATING GAASTA LB; HOBGOOD HM; ROHATGI A et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5771-5775; BIBL. 17 REF.Article

POINT-CONTACT INJECTION AT HIGH FIELDS IN INSULATOR WITH TRAPS & THERMAL FREE CARRIERSSHARMA YK.1982; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1982; VOL. 20; NO 2; PP. 130-132; BIBL. 5 REF.Article

TIME-RESOLVED MEASUREMENT OF THE ESCAPE OF CHARGE CARRIERS FROM A COULOMBIC POTENTIAL WELL BY DIFFUSIONAL MOTIONEICHHORN M; WILLIG F; CHARLE KP et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 76; NO 9; PP. 4648-4656; BIBL. 24 REF.Article

ABSORPTION TIME BY A RANDOM TRAP DISTRIBUTIONROSENSTOCK HB; STRALEY JP.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 5; PP. 2540-2544; BIBL. 7 REF.Article

ON SOME PARAMETERS OF ANNEALED TIN TELLURIDE, PREPARED BY THE IODIDE METHODMOLDOVANOVA M; TRIFONOVA EP; ASSENOV R et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. K47-K50; BIBL. 8 REF.Article

ORIENTATION DEPENDENCE OF BALLISTIC ELECTRON TRANSPORT AND IMPACT IONISATIONSHICHIJO H; HESS K; STILLMAN GE et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 6; PP. 208-210; BIBL. 6 REF.Article

THE TURN-OFF OF THYRISTORS WITH ENHANCED RECOMBINATION ZONES FOR A HIGH INJECTION LEVEL.GOBARTYUK AI; UVAROV AI.1976; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1976; VOL. 21; NO 7; PP. 103-106; BIBL. 6 REF.Article

CURRENT-FIELD CHARACTERISTICS OF OXIDES GROWN FROM POLYCRYSTALLINE SILICONCHENMING HU; YING SHUM; KLEIN T et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 189-191; BIBL. 11 REF.Article

INFLUENCE DE LA RECOMBINAISON SUR LA COMPOSANTE DE LONGUE DUREE DE LA CINETIQUE DU PHOTOCOURANT PRIMAIREBLAZHKO NA; SAL'KOV EA; KHVOSTOV VA et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 4; PP. 760-765; BIBL. 10 REF.Article

ELEMENT MEMORISANT A ALIMENTATION A INJECTIONBEREZIN AS; LAPSHINSKIJ VA; ONISHCHENKO EM et al.1978; MIKROELEKTRONIKA; S.S.S.R.; DA. 1978; VOL. 7; NO 2; PP. 126-132; BIBL. 14 REF.Article

EFFET DES TRAITEMENTS PAR CHAMPS DANS LES MILIEUX ACTIFS SUR LA MOBILITE DES TROUS DANS LE CANAL D'INVERSIONVENKSTERN SA; KOZLOV SN.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 354-358; BIBL. 11 REF.Article

MODELING OF EMITTER-BASE BULK AND PERIPHERAL SPACE-CHARGE-LAYER RECOMBINATION CURRENTS IN BIPOLAR TRANSISTORS.CHAMBERLAIN NG; ROULSTON DJ.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 12; PP. 1345-1346; BIBL. 8 REF.Article

DISTRIBUTION SPATIALE DE LA CHARGE CAPTUREE DANS LES COUCHES DE NITRURE DE SILICIUM DANS DES STRUCTURES ELECTROLYTE-NITRURE DE SILICIUM-OXYDE DE SILICIUM - SILICIUMSHIRSHOV YU M; NABOK AV; GOLTVYANSKIJ YU V et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 223-228; BIBL. 12 REF.Article

ON ANOMALOUS DRIFT MOBILITY RESULTS IN A-SILICON ALLOYSDATTA T; SILVER M.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1067-1071; BIBL. 6 REF.Article

THE INFLUENCE OF SURFACE RECOMBINATION ON THE DOUBLE-INJECTION NEGATIVE-RESISTANCEBRODKORB W.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. K157-K159; BIBL. 6 REF.Article

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