kw.\*:("CHARGE CARRIER")
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STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article
A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article
MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article
NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article
TRAPPING PARAMETERS FROM ISOTHERMAL DECAY OF THERMOLUMINESCENCELILLEY E; MOHARIL SV.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 3; PP. L17-L19; BIBL. 7 REF.Article
EFFECTS OF STOICHIOMETRY ON THERMAL STABILITY OF UNDOPED SEMI-INSULATING GAASTA LB; HOBGOOD HM; ROHATGI A et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5771-5775; BIBL. 17 REF.Article
POINT-CONTACT INJECTION AT HIGH FIELDS IN INSULATOR WITH TRAPS & THERMAL FREE CARRIERSSHARMA YK.1982; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1982; VOL. 20; NO 2; PP. 130-132; BIBL. 5 REF.Article
TIME-RESOLVED MEASUREMENT OF THE ESCAPE OF CHARGE CARRIERS FROM A COULOMBIC POTENTIAL WELL BY DIFFUSIONAL MOTIONEICHHORN M; WILLIG F; CHARLE KP et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 76; NO 9; PP. 4648-4656; BIBL. 24 REF.Article
ABSORPTION TIME BY A RANDOM TRAP DISTRIBUTIONROSENSTOCK HB; STRALEY JP.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 5; PP. 2540-2544; BIBL. 7 REF.Article
DISTRIBUTION SPATIALE DE LA CHARGE CAPTUREE DANS LES COUCHES DE NITRURE DE SILICIUM DANS DES STRUCTURES ELECTROLYTE-NITRURE DE SILICIUM-OXYDE DE SILICIUM - SILICIUMSHIRSHOV YU M; NABOK AV; GOLTVYANSKIJ YU V et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 223-228; BIBL. 12 REF.Article
ON ANOMALOUS DRIFT MOBILITY RESULTS IN A-SILICON ALLOYSDATTA T; SILVER M.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1067-1071; BIBL. 6 REF.Article
THE INFLUENCE OF SURFACE RECOMBINATION ON THE DOUBLE-INJECTION NEGATIVE-RESISTANCEBRODKORB W.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. K157-K159; BIBL. 6 REF.Article
COMMENT ON THE PAPER THE ROLE OF SHALLOW TRAPS ON THE MOBILITY OF ELECTRONS IN LIQUID AR, KR, AND XE, BY G. ASCARELLI, J. CHEM. PHYS. 71, 5030 (1979)SCHMIDT WF; SOWADA U; YOSHINO K et al.1981; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1981; VOL. 74; NO 5; PP. 3081-3084; BIBL. DISSEM.Article
ELECTROMIGRATION IN A QUASI-TWO-DIMENSIONAL ELECTRON GAS: THEORY OF DRIVING FORCEDASGUPTA BB; SORBELLO RS.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 10; PP. 4196-4201; BIBL. 18 REF.Article
ON THE LATTICE SCATTERING AND EFFECTIVE MASS OF HOLES IN NATURAL DIAMONDREGGIANI L; BOSI S; CANALI C et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 6; PP. 333-335; BIBL. 13 REF.Article
SIMULTANEOUS DOPING OF GAP WITH SN AND ZNNEUMANN H; BUTTER E; KRAMER P et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 1; PP. 99-104; ABS. GER; BIBL. 29 REF.Article
VARIATION DES PROPRIETES SEMICONDUCTRICES DE L'ARSENIURE D'INDIUM AVEC LA TEMPERATUREGEORGESCU LOGOFATU M; LOGOFATU B; LAZARESCU MF et al.1979; AN. UNIV. BUCURESTI, FIZ.; ROM; DA. 1979; VOL. 28; PP. 63-66; BIBL. 7 REF.Article
RECOMBINAISON STATIONNAIRE NON LINEAIRE DANS LES SEMICONDUCTEURSTKACHEV VD; SHADURSKAYA LI; YAVID V YU et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 1; PP. 71-74; BIBL. 6 REF.Article
EFFECTIVE-MASS VARIATION IN SILICON INVERSION LAYERSOVERHAUSER AW.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 6; PP. 2884-2887; BIBL. 11 REF.Article
MEASUREMENT OF THE ELECTRON DRIFT VELOCITY IN INSB UP TO FIELDS OF 800V/CM IN THE PRESENCE OF IMPACT IONIZATION.DARGYS A; SEDRAKYAN R; POZELA J et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 387-392; ABS. RUSSE; BIBL. 24 REF.Article
REGIME OF CONTACT EMISSION LIMITED CURRENT WITH WEAK HARMONIC DISTORTION OF STEADY BIAS.ZYUGANOV AN; PISMENNYI YG; SVECHNIKOV SV et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 631-638; ABS. RUSSE; BIBL. 17 REF.Article
THE INFRARED ABSORPTION SPECTRUM OF N-TYPE GAAS.JENSEN B.1978; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1978; VOL. 86; NO 1; PP. 291-301; ABS. ALLEM.; BIBL. 27 REF.Article
ROLE DE LA DIFFUSION ENTRE LES PUITS DANS LA RECOMBINAISON DES ELECTRONS DANS LE SILICIUMASHE M; SARBEJ OG.1978; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1978; VOL. 28; NO 10; PP. 625-628; BIBL. 11 REF.Article
SNSE SINGLE CRYSTALS: SUBLIMATION GROWTH, DEVIATION FROM STOICHIOMETRY AND ELECTRICAL PROPERTIES.MAIER H; DANIEL DR.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 6; PP. 693-704; BIBL. 1 P.Article
CONDUCTIVITE DES CANAUX SUPERFICIELS NON HOMOGENESSHIK A YA.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 6; PP. 2211-2217; ABS. ANGL.; BIBL. 24 REF.Article