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DISTRIBUTIONS HORS D'EQUILIBRE PAR DERIVE THERMIQUE DANS LES SEMI-CONDUCTEURS AMBIPOLAIRESGRIBNIKOV ZS.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2188-2195; BIBL. 4 REF.Article

CATHODOLUMINESCENCE OF INPGATOS CH; VAUGHAN JJ; LAGOWSKI J et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1464-1469; BIBL. 24 REF.Article

A-CENTRES-BUILD-UP KINETICS IN THE CONDUCTIVE MATRIX OF PULLED N-TYPE SILICON WITH CALCULATION OF THEIR RECHARGES AT DEFECT CLUSTERSDOLGOLENKO AP; FISHCHUK II.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 67; NO 2; PP. 407-411; ABS. RUS; BIBL. 5 REF.Article

ON SOME PARAMETERS OF ANNEALED TIN TELLURIDE, PREPARED BY THE IODIDE METHODMOLDOVANOVA M; TRIFONOVA EP; ASSENOV R et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. K47-K50; BIBL. 8 REF.Article

VARIATION DU TEMPS DE RELAXATION PHENOMENOLOGIQUE DE L'ENERGIE DES ELECTRONS DANS SI N EN FONCTION DE LA CONCENTRATIONASHMONTAS SP; OLEKAS AP.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 3; PP. 546-549; BIBL. 15 REF.Article

ELECTROCHEMICAL CARRIER CONCENTRATION PROFILING IN SILICONSHARPE CD; LILLEY P; ELLIOTT CR et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 622-624; BIBL. 6 REF.Article

GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS OF P-GE TYPEIVASHCHENKO VM; MITIN VV; ZAKHLENIUK NA et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 245-254; ABS. RUS; BIBL. 18 REF.Article

SYSTEMES D'ELECTRONS-TROUS AU CONTACT DE DEUX COUCHES SEMICONDUCTRICESANDRYUSHIN EA; SILIN AP.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 11; PP. 3399-3403; BIBL. 3 REF.Article

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

CONDUCTANCE OSCILLATIONS IN TWO-DIMENSIONAL GAAS IMPURITY BANDSPEPPER M.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 42; NO 6; PP. 947; BIBL. 3 REF.Article

PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORSFINETTI M; MASETTI G; NEGRINI P et al.1980; J.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 1; PP. 37-41; BIBL. 26 REF.Article

THE ELECTROLYTE-SILICON INTERFACE; ANODIC DISSOLUTION AND CARRIER, CONCENTRATION PROFILINGSHARPE CD; LILLEY P.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 9; PP. 1918-1922; BIBL. 10 REF.Article

EFFECT OF EXCESS COMPONENT ELEMENT DURING LPE ON ELECTRICAL PROPERTIES OF CDTESARAIE J; KITAGAWA M; TANAKA T et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2226-2231; BIBL. 39 REF.Article

LATTICE THERMAL RESISTIVITY DUE TO THE BOUND STATE ELECTRONSDUBEY KS; KASSIM HA.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. K149-K154; BIBL. 18 REF.Article

RELATIONSHIP OF MBE GROWTH PARAMETERS WITH THE ELECTRICAL PROPERTIES OF THIN (100) INAS EPILAYERSGRANGE JD; PARKER EHC; KING RM et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 9; PP. 1601-1612; BIBL. 1 P.Article

OSCILLATORY AMPLITUDE AND DAMPING OF TRANSVERS MAGNETOPHONON RESONANCE FOR N-TYPE INSB.FUJISAWA I.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 4; PP. 667-672; BIBL. 6 REF.Article

ETUDE DE L'ACTIVITE ELECTRIQUE DES IMPURETES GADOLINIUM ET YTTERBIUM DANS L'ANTIMONIURE DE GALLIUMALIEV MI; ISAKOV GI; ZEJNALOV SA et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 5; PP. 835-837; BIBL. 6 REF.Article

CALCULATION OF THE LENZ-JENSEN POTENTIAL USING THE THIRD ORDER APPROXIMATIONBISTER M; HAUTALA M.1978; PHYS. LETTERS, A; NLD; DA. 1978; VOL. 68; NO 1; PP. 98-100; BIBL. 11 REF.Article

INFLUENCE DU FACTEUR DE HALL SUR LA DETERMINATION DES PARAMETRES DES NIVEAUX D'IMPURETE D'APRES LES VARIATIONS THERMIQUES DE LA CONCENTRATION DES PORTEURS DE CHARGEGAJLITIS IA; KLOTYN'SH EH EH.1977; LATV. P.S.R. ZINAT, AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 1; PP. 51-55; ABS. ANGL.; BIBL. 4 REF.Article

UTILISATION DU MODELE A UN NIVEAU D'IMPURETE ACTIF POUR L'INTERPRETATION DES RESULTATS DES DEPENDANCES THERMIQUES DE LA CONCENTRATION DES PORTEURS DE CHARGEBARISS VO; KLOTYN'SH EH EH.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 3; PP. 38-43; ABS. ANGL.; BIBL. 13 REF.Article

EFFECTS OF CHANNELLING ON THE ELECTRICAL PROPERTIES OF DONOR IMPLANTED GAAS.HARRIS TJ; SEALY BJ; SURRIDGE RK et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 25; PP. 664-665; BIBL. 4 REF.Article

DETERMINATION DU NIVEAU D'IMPURETE DU CUIVRE DANS L'ARSENIURE DE GALLIUMBARISS VO; KLOTYN'SH EH EH.1976; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1976; NO 6; PP. 26-32; ABS. ANGL.; BIBL. 8 REF.Article

POLARIMETRE IR ET LES METHODES DE MESURE SANS CONTACT DES CONCENTRATIONS DE PORTEURS LIBRES DANS LES SEMICONDUCTEURSGALANOV EK; POTIKHONOV GN; SOROKIN VV et al.1976; ZAVODSK. LAB.; S.S.S.R.; DA. 1976; VOL. 42; NO 10; PP. 1194-1196; BIBL. 9 REF.Article

LUMINESCENCE DES SEMI-CONDUCTEURS APPAUVRIS EN PORTEURS DE CHARGEBOLGOV SS; MALYUTENKO VK; PIPA VI et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 208-212; BIBL. 9 REF.Article

COMMENT ON NOISE IN TRANSFERRED ELECTRON AMPLIFIERSHANDEL PH; VAN DER ZIEL A.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 7; PP. 541-542; BIBL. 4 REF.Article

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