FIELD ENHANCED CARRIER GENERATION IN MOS-CAPACITORS CONTAINING DEFECTSWERNER C; EDER A; BERNT H et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 275-279; BIBL. 10 REF.Article

CONTROL OF TRAPATT OSCILLATIONS BY OPTICALLY GENERATED CARRIERS.KIEHL RA; EERNISSE EP.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 275-277; BIBL. 4 REF.Article

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CHARGE-CARRIER GENERATION IN ANTHRACENE BY THE SINGLET-SINGLET COLLISION-IONIZATION PROCESS AND THE SINGLET PHOTOIONIZATION PROCESS.KAINO H.1978; MOLEC. CRYST. LIQUID CRYST.; GBR; DA. 1978; VOL. 46; NO 1-2; PP. 1-9; BIBL. 18 REF.Article

GENERATION THERMIQUE DE PORTEURS PAR DES CENTRES SUPERFICIELS APRES CHANGEMENT DE POLARISATION D'UNE STRUCTURE MDS EN REGIME D'INVERSIONKAPLAN GD; NOGIN VM.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 10; PP. 1964-1969; BIBL. 5 REF.Article

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EFFET DES DEFAUTS STRUCTURELS DE LA FRONTIERE SI-SIO₂ SUR LES PROCESSUS DE GENERATIONKUNINA TV; PERELYGIN AI; PRESS FP et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 3; PP. 257-262; BIBL. 6 REF.Article

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THE PHOTOEFFECT IN SILICON PLANAR POSITIONAL PHOTON-DETECTORS WITH A HIGH RESISTIVITY DOPED CHANNEL.VASSILEV VS; VELCHEV NB.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 999-1001; BIBL. 8 REF.Article

INTERFACE TRAPS GENERATED BY INTERNAL PHOTOEMISSION IN AL-SIO₂-SI STRUCTURESZEKERIYA V; MA TP.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 1; PP. 95-97; BIBL. 22 REF.Article

THE EFFECT OF PHOTOGENERATED CARRIERS ON THE MEAN TIME DELAY FOR AVALANCHE BREAKDOWN IN P-N JUNCTIONSMCGRUER N; REINHARD DK.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 289-291; BIBL. 3 REF.Article

GENERATION DES PORTEURS DE CHARGE DANS LES STRUCTURES SEMICONDUCTRICES A BASE DE SI ET GAAS AVEC UNE COUCHE DE DEPLETION HORS EQUILIBREGORBAN AP; DMITRUK NL; LITOVCHENKO VG et al.1978; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1978; NO 28; PP. 86-95; BIBL. 29 REF.Article

TEMPERATURE DEPENDENCE OF ELECTRON TRANSPORT AND GENERATION IN BIPHENYL.BURSHTEIN Z; WILLIAMS DF.1977; J. CHEM. PHYS.; U.S.A.; DA. 1977; VOL. 67; NO 8; PP. 3592-3598; BIBL. 20 REF.Article

ELECTRIC AND ELECTROCHEMICAL PROPERTIES OF SOLID CDBR₂4H₂O IN THE STAGE OF DEHYDRATIONSUSIC MV; MINIC DM; MIOC UB et al.1982; SOLID STATE IONICS; ISSN 0167-2738; NLD; DA. 1982; VOL. 6; NO 2; PP. 139-143; BIBL. 6 REF.Article

SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATIONTAKEDA E; KUME H; TOYABE T et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 611-618; BIBL. 19 REF.Article

A QUICK METHOD FOR THE DETERMINATION OF BULK GENERATION LIFETIME IN SEMICONDUCTORS FROM PULSED MOS CAPACITANCE MEASUREMENTSRABBANI KS; LAMB DR.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 7; PP. 661-664; BIBL. 5 REF.Article

MINORITY CARRIER GENERATION TIME AND SURFACE GENERATION VELOCITY DETERMINATION FROM Q-T MEASUREMENTSVISWANATHAN CR; TAKINO T.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 7; PP. 817-821; BIBL. 5 REF.Article

OBSERVATION OF THERMALLY GENERATED CARRIER IN CHARGE COUPLED DEVICES.BABA T; SASAKI R.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1369-1378; BIBL. 8 REF.Article

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THE MODERN METHODS FOR THE INVESTIGATION OF THE GENERATION-RECOMBINATION PARAMETERS OF MIS STRUCTURES.LITOVCHENKO V.1976; WISSENSCH. Z. TECH. HOCHSCH. ILMENAU; DTSCH.; DA. 1976; VOL. 22; NO 6; PP. 135-147; BIBL. 11 REF.Article

A CONSTANT-CURRENT CHARGING TECHNIQUE FOR THE MEASUREMENT OF GENERATION RATES IN MOS-CAPACITORSHEASELL EL.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 199-209; BIBL. 26 REF.Article

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SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATIONTAKEDA E; KUME H; TOYABE T et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 241-248; BIBL. 19 REF.Article