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ETUDE DE LA POSSIBILITE D'INJECTION EXTERNE DANS UN MICROTRONESINA ZN; KUZNETSOV VM; LASHUK NA et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 3; PP. 24-26; BIBL. 6 REF.Article

COMMENT ON "MAGNETIC TRANSISTOR BEHAVIOR EXPLAINED BY MODULATION OF EMITTER INJECTION, NOT CARRIER DEFLECTION"ZIEREN V; KORDIC S; MIDDELHOEK S et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 394-397; BIBL. 8 REF.Article

HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICESEITAN B; FROHMAN BENTCHKOWSKY D.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 328-340; BIBL. 18 REF.Article

RETENTION CHARACTERISTICS OF HOLE-INJECTION-TYPE EE PROMFUKUDA Y; KODAMA H.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2080-2085; BIBL. 15 REF.Article

TRANSISTOR A EFFET PHOTOELECTRIQUE (A IMPURETES) A INJECTION COMPLEMENTAIREVIKULIN IM; KURMASHEV SH D; ANDREEV VI et al.1979; ZH. TEKH. FIZ.; SUN; DA. 1979; VOL. 49; NO 7; PP. 1563-1565; BIBL. 4 REF.Article

MODELING THE BASE RESISTANCE OF A BIPOLAR JUNCTION TRANSISTORJAIN LC; GARUD GN.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 11; PP. 450-452; ABS. GER; BIBL. 11 REF.Article

ELEMENT MEMORISANT A ALIMENTATION A INJECTIONBEREZIN AS; LAPSHINSKIJ VA; ONISHCHENKO EM et al.1978; MIKROELEKTRONIKA; S.S.S.R.; DA. 1978; VOL. 7; NO 2; PP. 126-132; BIBL. 14 REF.Article

TIME-RESOLVED CHARGE INJECTION: EFFECT OF INTERFACIAL AMBIENTS UPON CONTACT PERFORMANCESLOWIK JH; BRILLSON LJ; BRUCKER CF et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 550-556; BIBL. 26 REF.Article

SUR LA THEORIE DE LA PROPAGATION D'UN FLUX ELECTRONIQUE NON RELATIVISTE DANS DES CHAMPS ELECTROSTATIQUES ACCELERATEURS LORS D'UNE INJECTION D'IONSBELOV NE.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 3; PP. 571-577; BIBL. 3 REF.Article

SIDEWALL EFFECTS IN SHALLOW EMITTER OF SMALL BIPOLAR TRANSISTORELTOUKHY AA; ROULSTON DJ.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 845-846; BIBL. 8 REF.Article

F.E.M. DANS LES SEMICONDUCTEURS, DUE A L'INJECTION THERMIQUEABROSIMOV VM; EGOROV BN; LIDORENKO NS et al.1977; IZVEST. AKAD. NAUK S.S.S.R., ENERGET.; S.S.S.R.; DA. 1977; NO 5; PP. 168-169; BIBL. 4 REF.Article

INFLUENCE DES CHAMPS LOCAUX DES PORTEURS DE CHARGE INJECTES SUR L'EFFET DE FAIBLE CHAMP MAGNETIQUE DANS LE TETRATHIOTETRACENEKAULACH IS.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 2; PP. 42-46; ABS. ANGL.; BIBL. 4 REF.Article

STUDIES OF THE THEORY OF SINGLE AND DOUBLE INJECTIONS IN SOLIDS WITH A GAUSSIAN TRAP DISTRIBUTION.HWANG W; KAO KC.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 12; PP. 1045-1047; BIBL. 7 REF.Article

PROPRIETES D'INJECTION DES CONTACTS SUR DES SEMICONDUCTEURS A GRANDE IMPEDANCE. IFUKS BI.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 9; PP. 1679-1689; BIBL. 12 REF.Article

VARIATION DE L'INTENSITE DE LA RECOMBINAISON AUGER BANDE A BANDE EN FONCTION DE LA CONCENTRATION DES PORTEURS DANS LE SILICIUMVAJTKUS YU; GRIVITSKAS V.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 1894-1902; BIBL. 34 REF.Article

CHAMP ELECTRIQUE DANS LES SUPRACONDUCTEURS DANS L'INJECTION TUNNELIVLEV BI.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 2; PP. 436-441; BIBL. 18 REF.Article

PHOTOCONDUCTIVITE DES STRUCTURES P.I.N LORS DE L'ABSORPTION DE LA LUMIERE PAR LES PORTEURS INJECTESBLOKHIN IK; OSIPOV VV; STAFEEV VI et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 8; PP. 1702-1707; BIBL. 14 REF.Article

PROFONDEUR MOYENNE ET DYNAMIQUE DE L'INJECTION DES ELECTRONS DANS UN DIELECTRIQUEGRACHEV BD; GUDOVSKIKH VA; KOZLOVSKIJ SS et al.1979; ZH. TEKH. FIZ.; SUN; DA. 1979; VOL. 49; NO 1; PP. 134-137; BIBL. 6 REF.Article

CARACTERISTIQUE FREQUENTIELLE, A BASSE INJECTION, D'UN PHOTOCONDUCTEUR QUASIMONOPOLAIREZYUGANOV AN; MIKHELASHVILI VM; SVECHNIKOV SV et al.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 26; PP. 78-90; BIBL. 26 REF.Article

CHARACTERIZATION OF DIODES IN SATURED-VELOCITY REGIME UNDER ARBITRARY INJECTION.HARIU T; SHIBATA Y.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3577-3579; BIBL. 4 REF.Article

ON THE THEORY OF DOUBLE INJECTION IN SOLIDS WITH TRAPS NON-UNIFORMLY DISTRIBUTED IN ENERGY AND IN SPACE.KAO KC; ELSHARKAWI AR.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 41; NO 6; PP. 607-615; BIBL. 5 REF.Article

CARACTERISTIQUE COURANT-TENSION DYNAMIQUE DE LA STRUCTURE N+-P-N-P+ POUR UN HAUT NIVEAU D'INJECTION A L'ETAT BLOQUEMAMATKULOV P; TURSUNOV AA; DZHALIMBETOV MM et al.1976; IZVEST. AKAD. NAUK UZ.S.S.R., FIZ.-MAT. NAUK; S.S.S.R.; DA. 1976; NO 4; PP. 48-51; ABS. UZB.; BIBL. 5 REF.Article

ON THE MINORITY CHARGE STORAGE FOR AN EPITAXIAL SCHOTTKY-BARRIER DIODECHUANG CT.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 700-705; BIBL. 15 REF.Article

TEMPERATURE DEPENDENT BARRIER INJECTION IN TRANSIT TIME DEVICES: STEADY STATEMUSTAFA M; AHMAD S.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6236-6239; BIBL. 15 REF.Article

HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONSBOUDREAUX DS; WILLIAMS F; NOZIK AJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2158-2163; BIBL. 17 REF.Article

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