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kw.\*:("CHARGE CARRIER SCATTERING")

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DIFFUSION SUPERFICIELLE DANS UNE COUCHE D'INVERSION QUANTIQUEVAS'KO FT.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 2068-2071; BIBL. 10 REF.Article

SCATTERING THEORY OF DEFECTS IN CRYSTALS.RENNIE R.1977; ADV. IN PHYS.; G.B.; DA. 1977; VOL. 26; NO 3; PP. 285-337; BIBL. 5 P.Article

THE "GOLDEN RULE" FOR DISLOCATION SCATTERING.BROWN RA.1977; J. PHYS. F; G.B.; DA. 1977; VOL. 7; NO 6; PP. L155-L158; BIBL. 16 REF.Article

ELECTRON TRANSPORT IN AVALANCHING GAAS DIODESLANYON HPD.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 101-102; BIBL. 9 REF.Article

LOW-TEMPERATURE DIFFUSION OF ELECTRONS IN ICE. EVIDENCE FOR POLARON BANDS.PRINCE RH.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 78; NO 1; PP. 271-276; BIBL. 20 REF.Article

TIME-RESOLVED MEASUREMENT OF THE ESCAPE OF CHARGE CARRIERS FROM A COULOMBIC POTENTIAL WELL BY DIFFUSIONAL MOTIONEICHHORN M; WILLIG F; CHARLE KP et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 76; NO 9; PP. 4648-4656; BIBL. 24 REF.Article

SCATTERING MECHANISMS AND L/F NOISE IN SEMICONDUCTORSKLEINPENNING TGM.1981; PHYSICA B+C; ISSN 0378-4363; NLD; DA. 1981; VOL. 103; NO 2-3; PP. 345-347; BIBL. 8 REF.Article

L'INFLUENCE DE LA TENSION D'ACCELERATION DES ELECTRONS PRIMAIRES DANS UN MICROSCOPE ELECTRONIQUE A BALAYAGE SUR LA MESURE DE LA LONGUEUR DE DIFFUSION DES PORTEURS DE CHARGE MINORITAIRES DANS LES SEMICONDUCTEURSPOKORNY J; LAICHTER V.1978; SLAB. OBZ.; CESKOSL.; DA. 1978; VOL. 39; NO 1; PP. 1-7; ABS. RUSSE ALLEM. ANGL. FR.; BIBL. 8 REF.Article

SURFACE PLASMON DAMPING DUE TO ROUGH BOUNDARY SCATTERINGGABASHVILI AA; YAMPOLSKI VA.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 7; PP. 729-731; BIBL. 9 REF.Article

SCATTERING OF ELECTRONS DUE TO SCREW DISLOCATIONSKAWAMURA K.1978; Z. PHYS. B; DEU; DA. 1978; VOL. 30; NO 1; PP. 1-11; BIBL. 4 REF.Article

LE PROBLEME DE LA DIFFUSION D'UN ELECTRON PAR UN CENTRE COULOMBIENSAMSONENKO NV; DUBKOV SL.1980; IZV. VYSS. UCEBN. ZAVED., FIZ.; ISSN 0021-3411; SUN; DA. 1980; NO 4; PP. 16-19; BIBL. 9 REF.Article

THEORY FOR IMPURITY SCATTERING IN A SUPERCONDUCTING FILM ON A NORMAL SUBSTRATEGUMBS G.1983; JOURNAL OF LOW TEMPERATURE PHYSICS; ISSN 0022-2291; USA; DA. 1983; VOL. 50; NO 1-2; PP. 89-103; BIBL. 12 REF.Article

PHENOMENES CINETIQUES DANS LE MODELE DE HUBBARDPIRADASHVILI IN.1983; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1983; VOL. 84; NO 1; PP. 124-137; ABS. ENG; BIBL. 22 REF.Article

MACROSCOPIC ASPECTS OF CARRIER TRANSPORT IN THIN FILMSKENISCH HK; MANIFACIER JC.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 89; NO 1; PP. 3-12; BIBL. 30 REF.Conference Paper

DYNAMIQUE DES ELECTRONS DANS L'ARGON ET LE XENON CONDENSESGUSHCHIN EM; KRUGLOV AA; OBODOVSKIJ IM et al.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 82; NO 4; PP. 1114-1125; ABS. ENG; BIBL. 25 REF.Article

EFFET PHOTOGALVANIQUE, DIFFUSION ET DERIVE DES ELECTRONS HORS D'EQUILIBRE POUR DES VALEURS FINIES DU LIBRE PARCOURS MOYENSTURMAN BI.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 5; PP. 1930-1940; ABS. ENG; BIBL. 17 REF.Article

AN EXPERIMENTAL STUDY OF MOTION OF ELECTRONS AND HOLES IN Y2O2S CRYSTAL AS REVEALED BY CATHODOLUMINESCENCEOZAWA L.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 7; PP. 1535-1540; BIBL. 14 REF.Article

DISORDER SCATTERING IN MIXED PB1-XSNXTE-TYPE SEMICONDUCTORSSIERANSKI K; SZATKOWSKI J.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K87-K90; BIBL. 9 REF.Article

INFLUENCE OF CHARGE CARRIER SCATTERING ON THE EXACT FORM OF THE HALL CURVERIJKS HJ; GILING LJ; BLOEM J et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 472-475; BIBL. 5 REF.Article

RELAXATION D'ENERGIE ET RELAXATION D'IMPULSION DES ELECTRONS CHAUDS DANS LA DIFFUSION PAR LES ACCEPTEURS NEUTRES DANS LES SEMICONDUCTEURS CUBIQUESREBANE YU T.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2179-2185; BIBL. 7 REF.Article

DEEP-LEVEL DEFECTS AND DIFFUSION LENGTH MEASUREMENTS IN LOW ENERGY PROTON-IRRADIATED GASLI SS; WANG WL; LAI PW et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 335-354Article

FURTHER COMMENTS ON "EFFECTS OF CARRIER DIFFUSION ON THE SMALL-SIGNAL BEHAVIOR OF IMPATT DIODES"BRAZIL TJ; SCANLAN JO.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2167; BIBL. 2 REF.Article

IMPURITY SCATTERING OF ELECTRONS IN NON-DEGENERATE SEMICONDUCTORSEL GHANEM HMA; RIDLEY BK.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 10; PP. 2041-2054; BIBL. 28 REF.Article

AFFINEMENT DU MODELE DU TRANSPORT ELECTRIQUE DANS LA PHASE SEMICONDUCTRICE SMSGOLUBKOV AV; GONCHAROVA EV; KAPUSTIN VA et al.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 12; PP. 3561-3567; BIBL. 13 REF.Article

MULTIPLE SCATTERING OF CONDUCTION ELECTRONS AT DISORDERED METAL SURFACESLESSIE D.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 6; PP. 2491-2505; BIBL. 38 REF.Article

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