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THE EFFECT OF CARRIER TEMPERATURE ON TRANSVERSE PHONON-HELICON INTERACTION IN PIEZOELECTRIC SEMICONDUCTORS.RAM CHANDRA; VERMA JS.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 2; PP. 181-184; BIBL. 5 REF.Article

DETAILED CALCULATION OF ENERGY RELAXATION TIME OF HOT ELECTRONS IN INSB.KOBAYASHI T.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3154-3155; BIBL. 5 REF.Article

COEFFICIENTS CINETIQUES, EN TENANT COMPTE DE L'INTERFERENCE NON LINEAIRE DES CHAMPS ELECTROMAGNETIQUESSTREKALOV VN.1979; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1979; VOL. 21; NO 11; PP. 3274-3278; BIBL. 2 REF.Article

INSTABILITE D'UN PLASMA D'ELECTRONS-TROUS QUASI-NEUTRE DANS UN CHAMP ELECTRIQUE ECHAUFFANTSABLIKOV VA.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 12; PP. 2309-2318; BIBL. 9 REF.Article

PROPAGATION OF HIGH POWER HELICONS IN N-INDIUM ANTIMONIDE CRYSTAL.GUHA S; GHOSH S.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 12; PP. 1377-1382; BIBL. 14 REF.Article

THE EFFECT OF CARRIER TEMPERATURE ON THE DRIFT INDUCED INSTABILITIES IN SEMICONDUCTOR PLASMAS.RAM CHANDRA.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 5; PP. 511-513; BIBL. 5 REF.Article

ACOUSTOELECTRIC DOMAIN INDUCED TRANSPARENCY IN TELLURIUM AT 11 MU M.MULLER KH; NIMTZ G.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 11; PP. 2961-2967; BIBL. 36 REF.Article

BAND-GAP ENHANCED CARRIER HEATING IN INGAASP/INP DOUBLE HETEROSTRUCTURE LIGHT-EMITTING DIODESWADA O; YAMAKOSHI S; SAKURAI T et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 981-983; BIBL. 23 REF.Article

EFFETS THERMOMAGNETIQUES DANS LES SEMICONDUCTEURS A DIMENSIONS FINIESBOCHKOV VS; GUREVICH YU G.1983; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1983; VOL. 25; NO 6; PP. 1698-1703; BIBL. 8 REF.Article

INFLUENCE OF ELECTRIC FIELD ON WEAK LOCALIZATIONBERGMANN G.1982; ZEITSCHRIFT FUER PHYSIK B. CONDENSED MATTER; ISSN 0722-3277; DEU; DA. 1982; VOL. 49; NO 2; PP. 133-138; BIBL. 21 REF.Article

DIFFUSION DES ATOMES DANS DES CRISTAUX NON METALLIQUES STIMULEE PAR LA RECOMBINAISON DES PORTEURSVINETSKIJ VL; CHAJKA GE.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 7; PP. 2170-2176; BIBL. 13 REF.Article

CYCLOTRON RESONANCE STUDY OF CONDUCTION ELECTRONS IN N-TYPE INDIUM ANTIMONIDE UNDER A STRONG MAGNETIC FIELD. II: HOT ELECTRONSMATSUDA O; OTSUKA E.1979; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1979; VOL. 40; NO 11; PP. 819-829; BIBL. 31 REF.Article

THEORY OF FLUCTUATIONS IN NONEQUILIBRIUM ELECTRON GASGANTSEVICH SV; GUREVICH SV; KATILIUS R et al.1979; RIV. NUOVO CIMENTO; ITA; DA. 1979; VOL. 2; NO 5; 87 P.; BIBL. 130 REF.Serial Issue

INFLUENCE DE L'ENTRAINEMENT MUTUEL DES ELECTRONS ET DES PHONONS SUR LA CONDUCTIVITE ELECTRIQUE DANS UN CHAMP MAGNETIQUE QUANTIFIANT ET ECHAUFFEMENT DES ELECTRONSZLOBIN AM.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 11; PP. 3453-3460; BIBL. 13 REF.Article

OBSERVATION OF THERMAL CARRIER GENERATION IN BURIED CHANNEL CHARGE COUPLED DEVICESMAYER GJ.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 546-547; BIBL. 3 REF.Article

EFFET DE BENARD DANS UN SEMICONDUCTEUR.TEMCHIN AN.1978; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; SUN; DA. 1978; VOL. 21; NO 7; PP. 41-45; BIBL. 6 REF.Article

KINETICS OF CURRENT-CONVECTIVE INSTABILITIES IN SOLID STATE PLASMA.MARTINOV NK; OLSIIHOUTAG B.1976; C.R. ACAD. BULG. SCI.; BULG.; DA. 1976; VOL. 29; NO 9; PP. 1269-1272; BIBL. 10 REF.Article

INFLUENCE D'UNE IRRADIATION ELECTRONIQUE SUR L'ECHAUFFEMENT DES PORTEURS PAR LE CHAMP ELECTRIQUE DANS DES MONOCRISTAUX DE GE1-XSIXABBASOV SH M; ABDINOV A SH; ABIEV AK et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 1989-1993; BIBL. 9 REF.Article

INFLUENCE OF THE CAPTURE OF CHARGE CARRIERS UPON THE I-U CURVES OF HOT ELECTRON SEMICONDUCTORS WITH ACCOUNT OF PHONON HEATINGGEGECHKORI TO; KACHLISHVILI ZS.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. 333-336; ABS. GER; BIBL. 8 REF.Article

ECHAUFFEMENT DES ELECTRONS PAR UN CHAMP ELECTRIQUE NON UNIFORME DANS GEASHMONTAS S.1976; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1976; VOL. 16; NO 3; PP. 407-416; ABS. LITU. ANGL.; BIBL. 11 REF.Article

MECANISMES DE RELAXATION DE L'ENERGIE DANS GAAS AUX BASSES TEMPERATURESZVEREV LP; MIN'KOV GM; NEGASHEV SA et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 12; PP. 2344-2348; BIBL. 15 REF.Article

THE RESISTIVE TRANSITION AND SUPERCONDUCTING PROPERTIES OF OPTICALLY ILLUMINATED TIN MICROSTRIPS = TRANSITION RESISTIVE ET PROPRIETES SUPRACONDUCTRICES DE MICROBANDES D'ETAIN ILLUMINEES OPTIQUEMENTSMITH LN.1980; J. LOW TEMP. PHYS.; ISSN 0022-2291; USA; DA. 1980; VOL. 38; NO 5-6; PP. 553-569; BIBL. 37 REF.Article

LOW-FREQUENCY CURRENT NOISE OF GAAS EPITAXIAL LAYERS BETWEEN 4,4 AND 300 KHOYER W; LAUTZ G; HEYEN M et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 111-117; ABS. GER; BIBL. 17 REF.Article

THERMALIZATION OF THE ELECTRON-HOLE PLASMA IN GAAS: THE CASE OF RESONANT EXCITATIONGOEBEL EO; HILDEBRAND O.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 88; NO 2; PP. 645-652; ABS. GER; BIBL. 27 REF.Article

ELECTRIC FIELD INDUCED HEATING OF HIGH MOBILITY ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURESJAGDEEP SHAH; PINCZUK A; STOERMER HL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 55-57; BIBL. 12 REF.Article

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