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ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO₂ LAYERSDE KEERSMAECKER RF; DI MARIA DJ.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1085-1101; BIBL. 47 REF.Article

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CAPTURE AND RELEASE OF ELECTRONS ON NA⁺-RELATED TRAPPING SITES IN THE SIO₂ LAYER OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT TEMPERATURES BETWEEN 77^O AND 296^OKDIMARIA DJ.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7251-7260; BIBL. 51 REF.Article