PREDISTORSION TECHNIQUE FOR THE MEASUREMENT OF TRANSFER INEFFICIENCY OF CHARGE-TRANSFER DEVICESDUTTA ROY SC; DAS VG.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 5; PP. 601-602; BIBL. 4 REF.Article

AN INSULATED-GATE CHARGE TRANSFER DEVICE ON INPLILE DL; COLLINS DA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 552-553; BIBL. 9 REF.Article

CHARACTERIZATION OF CHARGE-TRANSFER DEVICES WITH VARIABLE TRANSFER INEFFICIENCYBARSAN RM.1979; REV. ROUMAINE PHYS.; ROM; DA. 1979; VOL. 24; NO 5; PP. 471-485; ABS. FRE; BIBL. 32 REF.Article

CHARGE-TRANSFER NOIRE THEORY FOR SURFACE-CHANNEL CHARGE-COUPLED DEVICESOMURA Y; OHWADA K.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1816-1824; BIBL. 16 REF.Article

THEORETICAL ANALYSIS OF CHARGE TRANSFER LOSS ARISING FROM INTERFACE STATES IN CHARGE COUPLED DEVICES.HEALD DL.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 657-663; BIBL. 10 REF.Article

PICOSECOND LASER PHOTOLYSIS STUDIES OF FLUORESCENCE QUENCHING MECHANISMS OF FLAVIN: A DIRECT OBSERVATION OF INDOLE-FLAVIN SINGLET CHARGE TRANSFER STATE FORMATION IN SOLUTIONS AND FLAVOENZYMESKAREN A; IKEDA N; MATAGA N et al.1983; PHOTOCHEMISTRY AND PHOTOBIOLOGY; ISSN 0031-8655; GBR; DA. 1983; VOL. 37; NO 5; PP. 495-502; BIBL. 26 REF.Article

CHARACTERIZATION OF CHARGE-TRANSFER DEVICES WITH POSITION-DEPENDENT SMALL-SIGNAL TRANSFER INEFFICIENCYBARSAN RM.1980; INTERNATION. J. ELECTRON.; GBR; DA. 1980; VOL. 48; NO 2; PP. 149-164; BIBL. 27 REF.Article

MODELING AND EXPERIMENTAL SIMULATION OF THE LOW-FREQUENCY TRANSFER INEFFICIENCY IN BUCKET-BRIGADE DEVICESSCOTT DB; CHAMBERLAIN SG.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 405-414; BIBL. 13 REF.Article

ONE AND A HALF PHASE OPERATION OF A CCD DELAY LINEMORANDI C; MASETTI G.1979; ALTA FREQ.; ITA; DA. 1979; VOL. 48; NO 7; PP. 432-439; BIBL. 3 REF.Article

COMPUTER MODEL AND CHARGE TRANSPORT STUDIES IN SHORT GATE CHARGE-COUPLED DEVICES.ELSAID MH; CHAMBERLAIN SG; WATT LAK et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 1; PP. 61-69; BIBL. 33 REF.Article

USE OF THE WKB AND VARIATIONAL METHODS TO CALCULATE THE FINAL STAGES OF CHARGE TRANSFER IN A CCD.KOSAI K; SINGER BM.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 705-709; BIBL. 10 REF.Article

LARGE SIGNAL THEORY OF SURFACE CHARGE COUPLED DEVICESCALZOLARI PU; GRAFFI S.1979; ALTA FREQ.; ITA; DA. 1979; VOL. 48; NO 10; PP. 590-603; BIBL. 9 REF.Article

STEP AND FREQUENCY RESPONSES OF C.T.D.S. WITH NONUNIFORM TRANSFER INEFFICIENCYBARSAN RM.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 13; PP. 389-391; BIBL. 10 REF.Article

THE RESISTIVE GATE CTD AREA-IMAGE SENSORHEYNS H; VAN SANIEN JG.1978; I.E.E.E. IRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 2; PP. 135-139; BIBL. 13 REF.Article

A MULTIPLE-GATE CCD-PHOTODIODE SENSOR ELEMENT FOR IMAGING ARRAYSWHITE JM; CHAMBERLAIN SG.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 2; PP. 125-131; BIBL. 14 REF.Article

AN ANALYTICAL SOLUTION OF THE NONLINEAR TRANSPORT EQUATION THAT DESCRIBES AN MOS TRANSMISSION LINE.LONNGREN KE.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 481-484; BIBL. 10 REF.Article

CHARGE TRANSFER IN CHARGE-COUPLED DEVICES IN THE PRESENCE OF INTERFACE STATES.BARSAN RM.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 12; PP. 1015-1019; BIBL. 12 REF.Article

FRINGING FIELDS AND INTERFACE STATES EFFECTS ON INCOMPLETE CHARGE TRANSFER IN CHARGE-COUPLED DEVICES.BARSAN RM.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 8; PP. 815-828; ABS. FR.; BIBL. 9 REF.Article

LES DISPOSITIFS A TRANSFERT DE CHARGES (C.C.D.): PARAMETRES DE FONCTIONNEMENT ET BRUIT DE FONDLECOY G; TOUBOUL A; WALMA AA et al.1980; ; FRA; DA. 1980; DGRST-77 7 0987; IV-107 P.: ILL.; 30 CM; BIBL. 35 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

CHARGE TRANSFER BY SURFACE ACOUSTIC WAVES ON A MONOLITHIC MIS STRUCTURETSUBOUCHI K; HIGUCHI T; NAGAO M et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 8; PP. 762-765; BIBL. 7 REF.Article

AN 8-BIT, 4-PHASE SURFACE CHANNEL CHARGE-COUPLED DEVICE ON INPLILE DL; COLLINS DA.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 842-845; BIBL. 19 REF.Article

AN EVALUATION OF THE CHANGE-TRANSFER MODEL FOR THE CHROMOSPHORES OF THE RETINAL-CONTAINING PROTEINS, RHODOPSIN AND BACTERIORHODOPSINJOHNSTON DS; CLARK AD; KEMP CM et al.1982; BIOCHIM. BIOPHYS. ACTA; ISSN 0006-3002; NLD; DA. 1982; VOL. 679; NO 3; PP. 400-403; BIBL. 32 REF.Article

SHORT-CHANNEL EFFECTS ON THE INPUT STAGE OF SURFACE-CHANNEL CCD'S.ELSAID MH; CHAMBERLAIN SG.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 9; PP. 1164-1171; BIBL. 15 REF.Article

TECHNIQUES FOR INCREASING THE EFFECTIVE CHARGE-TRANSFER EFFICIENCY OF TAPPED C.C.D. REGISTERS.MAVOR J; DAVIE MC; DENYER PB et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 1; PP. 31-33; BIBL. 5 REF.Article

MINIMAL TRANSFER C.C.D. STRUCTURES.LIND LF; MATHESON WS.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 13; PP. 343-344; BIBL. 4 REF.Article