PROPERTIES OF HOMOGENEOUSLY DOPED ZNSE SINGLE CRYSTALS OBTAINED BY A NEW GROWTH METHODPAPADOPOULO AC; JEAN LOUIS AM; CHARIL J et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 5; PP. 587-592; BIBL. 22 REF.Article

A STUDY OF FAR-FIELD PATTERNS FROM HIGH PERFORMANCE 1.3-MU M INGAASP-INP EDGE-EMITTING LED'SDEVOLDERE P; GILLERON M; CHARIL J et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 354-360; BIBL. 20 REF.Article

A SCHOTTKY-BARRIER-DELINEATED STRIPE STRUCTURE FOR A GAINASP-INP CW LASERBOULEY JC; CHAMINANT G; CHARIL J et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 845-847; BIBL. 10 REF.Article

GAALAS STRIPE LASER WITH STABLE TRANSVERSE MODE STRUCTURELANDREAU J; DELPECH P; CHARIL J et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 2.4.1-2.4.4; BIBL. 3 REF.Conference Paper

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Suppression of fringe diffraction in localized holographic exposure for DBF laser arraysTALNEAU, A; CHANDOUINEAU, J. P; CHARIL, J et al.IEEE photonics technology letters. 1995, Vol 7, Num 7, pp 721-723, issn 1041-1135Article

Extremely low threshold operation of 1•5 μm GaInAsP/InP buried ridge stripe lasersCHARIL, J; SLEMPKES, S; ROBEIN, D et al.Electronics Letters. 1989, Vol 25, Num 22, pp 1477-1479, issn 0013-5194, 3 p.Article

Absorption-controlled tunable DFB amplifier-filtersNAKAJIMA, H; CHARIL, J; SLEMPKES, S et al.Electronics Letters. 1994, Vol 30, Num 16, pp 1294-1296, issn 0013-5194Article