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HYDROGEN CHEMISORPTION ON TUNGSTEN (110) STUDIED BY CORE LEVEL SPECTROSCOPYGUILLOT C; TREGLIA G; LECANTE J et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 8; PP. 1555-1566; BIBL. 23 REF.Article

A SOLID PLANAR SOURCE FOR PHOSPHORUS DIFFUSION.METZ DM; STACH J; JONES N et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1565-1569; BIBL. 12 REF.Article

WORK FUNCTION AND CHEMICAL DIFFUSION OF NONSTOICHROMETRIC OXIDE MATERIALSADAMCZYK Z; NOWOTNY J.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1112-1116; BIBL. 17 REF.Article

CHEMICAL DIFFUSION IN INTERMEDIATE PHASES IN THE LITHIUM-SILICON SYSTEMWEN CJ; HUGGINS RA.1981; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1981; VOL. 37; NO 3; PP. 271-278; BIBL. 37 REF.Article

STUDIES OF THE PUSH-OUT EFFECT IN SILICON. II. THE EFFECT OF PHOSPHORUS EMITTER DIFFUSION ON GALLIUM-BASE PROFILES, DETERMINED BY RADIO-TRACER TECHNIQUES.JONES CL; WILLOUGHBY AFW.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1531-1538; BIBL. 40 REF.Article

GERMANIUM ARSENIDE IODIDE: A CLATHRATE SEMICONDUCTORCHU TL; CHU SS; RAY RL et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7102-7103; BIBL. 7 REF.Article

DIFFUSION QUANTIQUE ET RECOMBINAISON DES ATOMES DANS UN CRISTAL AUX BASSES TEMPERATURESKAGAN YU; MAKSIMOV LA; PROKOF'EV NV et al.1982; PIS'MA V ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0370-274X; SUN; DA. 1982; VOL. 36; NO 6; PP. 204-207; BIBL. 4 REF.Article

THE CHEMICAL DIFFUSION OF TA IN GAMMA -U IN SAMPLES FABRICATED FOR POSITRON STUDIESROTHMAN SJ; NOWICKI LJ; FLUSS MJ et al.1982; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1982; VOL. 110; NO 1; PP. 55-58; BIBL. 15 REF.Article

ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICONTAN TY; GOSELE U; MOREHEAD FF et al.1983; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1983; VOL. 31; NO 2; PP. 97-108; BIBL. 58 REF.Article

CHEMICAL DIFFUSION IN THE LATTICE GAS OF NON-INTERACTING PARTICLESKUTNER R.1981; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1981; VOL. 81; NO 4; PP. 239-240; BIBL. 8 REF.Article

INTERDIFFUSION ET DEMIXTION. ANALYSE AU MICROANALYSEUR PAR SONDE ELECTRONIQUE D'UN PROFIL NACL<->KCLBONPUNT L; CHANH NB; HAGET Y et al.1979; J. MICR. SPECTROSC. ELECTRON.; FRA; DA. 1979; VOL. 4; NO 6; PP. 651-663; ABS. ENG; BIBL. 10 REF.Article

FORMALNA KINETYKA KRYSTALIZACJI = CINETIQUE FORMELLE DE CRISTALLISATIONZIELINSKI S.1978; WIADOM. CHEM.; POL; DA. 1978; VOL. 32; NO 9; PP. 667-677; ABS. ENG; BIBL. 12 REF.Article

"UP-HILL" DIFFUSION OF ZINC IN THE III-V SEMICONDUCTORS.TUCK B; ZAHARI MD.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 39; NO 2; PP. 509-515; ABS. ALLEM.; BIBL. 12 REF.Article

A METHOD FOR DETERMINATION OF (D) INTERNARY SYSTEMS FROM A SINGLE EXPERIMENT = METHODE DE DETERMINATION DE (D) DANS LES SYSTEMES TERNAIRES A PARTIR D'UNE EXPERIENCE UNIQUESCHUT RJ; COOPER AR.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 10; PP. 1957-1959; ABS. FRE/GER; BIBL. 12 REF.Article

CINETIQUE DE COMPLEXATION ET DE DIFFUSION DANS LES CRISTAUX A STRUCTURE DE DIAMANTMURAV'EV VA; PANTELEEV VA.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 6; PP. 1663-1668; BIBL. 19 REF.Article

ETUDE DE LA DIFFUSION CHIMIQUE DANS LES OXYDES DES METAUX REFRACTAIRESPAVLOV YU A; ZAMALIN E YU; MESHCHERYAKOV G YA et al.1979; IZV. VYSS. UCEBN. ZAVED., CERN. METALL.; ISSN 0368-0797; SUN; DA. 1979; NO 9; PP. 9-12; BIBL. 8 REF.Article

DEPLACEMENT DE L'INTERFACE SEMICONDUCTEUR-METAL PAR IRRADIATION DU SYSTEME AS2S3-AGKOSTYSHIN MT; USHENIN YU V.1980; UKR. FIZ. Z. (KIEV, 1967); ISSN 0503-1265; UKR; DA. 1980; VOL. 25; NO 11; PP. 1890-1893; ABS. ENG; BIBL. 11 REF.Article

UPHILL DIFFUSION ASSOCIATED WITH A FLUX OF EXTRINSIC VACANCIESYOUNG DJ; DELAMOTTE E; KIRKALDY JS et al.1979; CANAD. J. PHYS.; CAN; DA. 1979; VOL. 57; NO 6; PP. 722-727; ABS. FRE; BIBL. 15 REF.Article

ETUDE STRUCTURALE DE LA ZONE DE DIFFUSION AU COURS DE LA SATURATION D'UN MONOCRISTAL D'ANTIMOINE PAR LES VAPEURS DE TELLUREIGNATENKO PI; IVANITSYN NP; BASKAKOV SP et al.1979; METALLOFIZIKA; UKR; DA. 1979; NO 75; PP. 121-126; BIBL. 3 REF.Article

EVALUATION OF "BARRIER" METALS FOR SINTERED PLATINUM-GAAS CONTACTS.BERENZ JJ; SCILLA GJ; WRICK VL et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 6; PP. 1152-1157; BIBL. 26 REF.Article

IMPURITY AND SUBSTRATE DIFFUSION IN A THIN CONTACT LAYER.GOEL RP; BADER FE.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 8; PP. 1242-1245; BIBL. 5 REF.Article

THE DETERMINATION OF THE CHEMICAL DIFFUSION COEFFICIENTS FOR AGBR AND ALPHA -AGI BY MEANS OF AN IMPROVED D.C. POLARIZATION CELLMIZUSAKI J; FUEKI K; MUKAIBO T et al.1979; BULL. CHEM. SOC. JAP.; JPN; DA. 1979; VOL. 52; NO 7; PP. 1890-1895; BIBL. 7 REF.Article

TERNARY DIFFUSION WITH TWO MOVING BOUNDARIES.CHRISTENSEN NH.1977; J. AMER. CERAM. SOC.; U.S.A.; DA. 1977; VOL. 60; NO 1-2; PP. 54-58; BIBL. 8 REF.Article

THE NERNST-EINSTEIN EQUATION IN HIGH-DEFECT-CONTENT SOLIDSMURCH GE.1982; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 4; PP. 685-692; BIBL. 20 REF.Article

A MATHEMATICAL ASSESSMENT OF CHEMICAL DIFFUSION MEASUREMENTS IN TRANSITION METAL OXIDESMORIN F.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2439-2446; BIBL. 39 REF.Article

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