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UNIFIED ANALYSIS OF THE BULK UNIPOLAR DIODEHABIB SED; BOARD K.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 86-89; BIBL. 9 REF.Article

RECHERCHES AU MICROSCOPE A BALAYAGE ELECTRONIQUE, SUR LE PROCEDE D'ETCHBACK SULFURIQUE = INVESTIGATION WITH SEM ON SULFURIC ETCHBACKTOMAIUOLO F.1983; GALVANO-ORGANO; ISSN 0302-6477; FRA; DA. 1983; VOL. 52; NO 533; PP. 147-150; ABS. ENGArticle

REGENERATION OF CAUSTIC SODA ETCH SOLUTIONS FOR ALUMINUM = RECYCLAGE DES SOLUTIONS DE SOUDE CAUSTIQUE POUR L'ATTAQUE CHIMIQUE DE L'ALUMINIUMBROWN CJ.1982; PLATING AND SURFACE FINISHING; ISSN 0360-3164; USA; DA. 1982; VOL. 69; NO 6; PP. 102-105; BIBL. 5 REF.Article

GENERATION OF DISLOCATIONS INTRODUCED BY BENDING STRESS IN A SI WAFERSAWADA R; KARAKI T; WATANABE J et al.1983; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1983; VOL. 31; NO 2; PP. 109-114; BIBL. 24 REF.Article

A LOOK AT THE ECONOMICS OF PEROXIDE ETCHING OF PCB'SCOLE RM.1982; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1982; VOL. 28; NO 9; PP. 43-45Article

ETCHING AND KINETICS OF DISSOLUTION OF MO1-XWXSEX SINGLE CRYSTALSAGARWAL MK; WANI PA; PATAL JV et al.1981; CRYST. RES. TECH.; ISSN 0232-1300; DDR; DA. 1981-08; VOL. 16; NO 8; PP. 899-905; BIBL. 21 REF.Article

DISLOCATION ETCH PIT FORMATION ON NON-METALLIC CRYSTALSSANGWAL K.1982; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 8; PP. 2227-2238; BIBL. 72 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

ECCENTRICITY OF SYMMETRICAL AND ASYMMETRICAL ETCH PITS ON CALCITE CLEAVAGESMEHTA BJ.1981; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1981; VOL. 16; NO 10; PP. 1097-1101; ABS. GER; BIBL. 5 REF.Article

ROLE OF COMPLEXING AGENTS ON THE ETCHING CHARACTERISTICS OF BI-SB ALLOY SINGLE CRYSTALSBHATT VP; VYAS AR; PANDYA GR et al.1980; J. CRYST. GROWTH; NLD; DA. 1980-03; VOL. 48; NO 3; PP. 483-485; BIBL. 5 REF.Article

STUDY OF SURFACE CHARGE IN VMOS STRUCTURESSTOEV I; MATEV I.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 987-988; BIBL. 5 REF.Article

COMPARISON OF CHEMICAL AND VACUUM ETCHINGS FOR VISUALIZATION OF THE AUSTENITE GRAIN IN STEELSFARBER VM; POTEMKINA TG.1981; ZAVOD. LAB.; SUN; DA. 1981-09; VOL. 47; NO 9; PP. 75-76; BIBL. 1 REF.Article

A HIGH RESOLUTION ETCHING TECHNIQUE FOR DETERMINING EPITAXIAL LAYER THICKNESSPEARCE CW.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 920-921; BIBL. 12 REF.Article

LASER-CONTROLLED CHEMICAL ETCHING OF ALUMINUMTSAO JY; EHRLICH DJ.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 2; PP. 146-148; BIBL. 10 REF.Article

CHEMICALLY ETCHED-MIRROR GAINASP/IN LASERS. REVIEWIGA K; MILLER BI.1982; IEEE J. QUANTUM. ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 1; PP. 22-29; BIBL. 45 REF.Article

MECHANISM OF PARTICLE TRACK ETCHING IN POLYMERIC NUCLEAR TRACK DETECTORSLUECK HB.1982; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 0167-5087; NLD; DA. 1982; VOL. 202; NO 3; PP. 497-501; BIBL. 51 REF.Article

NITALAETZUNG ZUM NACHWEIS VON SCHLEIFBRAND = L'ATTAQUE PAR DU NITAL SERT A METTRE EN EVIDENCE LES BRULURES CAUSEES PAR UNE OPERATION DE RECTIFICATIONBAUSCH T.1982; ANTRIEBSTECHNIK; ISSN 0722-8546; DEU; DA. 1982; VOL. 21; NO 3; PP. 89-91; BIBL. 2 REF.Article

APLICACION DE LA METALOGRAFIA AL ESMALTADO VITREO = APPLICATION DE LA METALLOGRAPHIE SUR L'EMAIL VITRIFIEFERREIRO A.1981; BOL. SOC. ESP. CERAM. VIDR.; ISSN 0366-3175; ESP; DA. 1981; VOL. 20; NO 6; PP. 369-382; ABS. ENG/FRE/GERArticle

CONTROLE DES PROCESSUS D'ATTAQUE DES MATERIAUX DANS UN PLASMA A DECHARGE GAZEUSE BASSE TEMPERATUREDANILIN BS; KIREEV V YU; KAPLIN VA et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 1; PP. 13-29; BIBL. 61 REF.Article

A STUDY OF BULK-ETCH RATES AND TRACK-ETCH RATES IN CR39GREEN PF; RAMLI AG; AL NAJJAR SAR et al.1982; NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH; ISSN 0167-5087; NLD; DA. 1982; VOL. 203; NO 1-3; PP. 551-559; BIBL. 16 REF.Article

AUGER ANALYSIS OF ETCHED (100) GAAS SURFACESILIADIS A.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 11; PP. 1519-1521; BIBL. 7 REF.Article

EFFECT OF VARIOUS ETCHING SOLUTIONS ON THE RESPONSE OF CR-39 PLASTIC TRACK DETECTORAMIN SA; HENSHAW DL.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 0167-5087; NLD; DA. 1981; VOL. 190; NO 2; PP. 415-421; BIBL. 12 REF.Article

LOCALIZED GAAS ETCHING WITH ACIDIC HYDROGEN PEROXIDE SOLUTIONSSHAW DW.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 874-880; BIBL. 4 REF.Article

A NEW ANODIC ETCH FOR THE OBSERVATION OF DISLOCATIONS IN N-GAASNAGATA K; KOMIYA S; SHIBATOMI A et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 10; PP. 2247-2250; BIBL. 14 REF.Article

Effect of chemical etching on the morphology of anodic aluminum oxides in the two-step anodization processERDOGAN, Pembe; YUKSEL, Behiye; BIROL, Yucel et al.Applied surface science. 2012, Vol 258, Num 10, pp 4544-4550, issn 0169-4332, 7 p.Article

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