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Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide filmYANG, Cheng-Fu; CHEN, Kai-Huang; CHEN, Ying-Chung et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2007, Vol 54, Num 9, pp 1726-1730, issn 0885-3010, 5 p.Article

Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devicesCHEN, Kai-Huang; LIAO, Chin-Hsiung; TSAI, Jen-Hwan et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 110, Num 1, pp 211-216, issn 0947-8396, 6 p.Article

The influence of lanthanum doping on the physical and electrical properties of BTV ferroelectric thin filmsCHEN, Kai-Huang; CHENG, Chien-Min; SHIH, Chia-Chi et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 103, Num 4, pp 1173-1177, issn 0947-8396, 5 p.Article

Large memory window in the vanadium doped Bi4Ti3O12 thin filmsCHEN, Kai-Huang; CHANG, Chia-Hsiung; CHENG, Chien-Min et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 97, Num 4, pp 919-923, issn 0947-8396, 5 p.Article

The Influence of Annealing Process on Physical and Electrical Characteristics of (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 Thin FilmsCHEN, Kai-Huang; YANG, Cheng-Fu.Ferroelectrics (Print). 2009, Vol 381, pp 59-66, issn 0015-0193, 8 p.Conference Paper

Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devicesYANG, Cheng-Fu; CHEN, Kai-Huang; CHEN, Ying-Chung et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 90, Num 2, pp 329-331, issn 0947-8396, 3 p.Article

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC ApplicationsTSAI, Tsung-Ming; CHANG, Kuan-Chang; TAI, Ya-Hsiang et al.IEEE electron device letters. 2012, Vol 33, Num 12, pp 1696-1698, issn 0741-3106, 3 p.Article

Temperature and frequency dependence of the ferroelectric characteristics of BaTiO3 thin films for nonvolatile memory applicationsCHEN, Kai-Huang; CHEN, Ying-Chung; CHEN, Zhi-Sheng et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 89, Num 2, pp 533-536, issn 0947-8396, 4 p.Article

Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid TreatmentCHANG, Kuan-Chang; PAN, Chih-Hung; CHEN, Jian-Yu et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 617-619, issn 0741-3106, 3 p.Article

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access MemoryRUI ZHANG; CHANG, Kuan-Chang; CHEN, Min-Chen et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 630-632, issn 0741-3106, 3 p.Article

The influence of different fabrication processes on characteristics of excess Bi2O3-doped 0.95 (Na0.5Bi0.5)TiO3-.0.05 BaTiO3 ceramicsWEI, Yin-Fang; CHUNG, Ho-Hua; YANG, Cheng-Fu et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 4, pp 934-940, issn 0022-3697, 7 p.Article

Fabrication and characteristics of Ba(Zr0.1,Ti0.9)O3 thin films on glass substrateCHEN, Kai-Huang; CHEN, Ying-Chung; YANG, Cheng-Fu et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 461-464, issn 0022-3697, 4 p.Conference Paper

Dual Ion Effect of the Lithium Silicate Resistance Random Access MemoryCHANG, Kuan-Chang; TSAI, Tsung-Ming; HUANG, Syuan-Yong et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 530-532, issn 0741-3106, 3 p.Article

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access MemoryCHU, Tian-Jian; TSAI, Tsung-Ming; CHEN, Min-Chen et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 217-219, issn 0741-3106, 3 p.Article

Low Temperature Improvement Method on Zn: SiOx Resistive Random Access Memory DevicesCHANG, Kuan-Chang; TSAI, Tsung-Ming; SU, Yu-Ting et al.IEEE electron device letters. 2013, Vol 34, Num 4, pp 511-513, issn 0741-3106, 3 p.Article

Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substratesCHEN, Kai-Huang; CHANG, Ting-Chang; CHANG, Guan-Chang et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 1, pp 291-295, issn 0947-8396, 5 p.Article

Electrical Characteristics of Bi4Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory DevicesCHEN, Kai-Huang; DIAO, Chien-Chen; YANG, Cheng-Fu et al.Ferroelectrics (Print). 2009, Vol 385, pp 46-53, issn 0015-0193, 8 p.Conference Paper

Switching Properties of Ba(Zr0.1Ti0.9)O3 Ferroelectric Films Under Various Retention Cycles for Application in Nonvolatile Memory DevicesCHEN, Kai-Huang; TZOU, Wen-Cheng; YANG, Cheng-Fu et al.Ferroelectrics (Print). 2009, Vol 385, pp 62-68, issn 0015-0193, 7 p.Conference Paper

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access MemorySHIH, Chih-Cheng; CHANG, Kuan-Chang; CHU, Tian-Jian et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 633-635, issn 0741-3106, 3 p.Article

Memory Properties of SrBi2Ta2O9 Ferroelectric Thin Film Prepared on Si02/Si SubstrateTZOU, Wen-Cheng; CHEN, Kai-Huang; YANG, Cheng-Fu et al.Ferroelectrics (Print). 2009, Vol 385, pp 54-61, issn 0015-0193, 8 p.Conference Paper

The Effect of RF Power on the Characteristics of Ba(Zr0.1Ti0.9)O3 Thin FilmCHEN, Kai-Huang; YANG, Cheng-Fu; TZOU, Wen-Cheng et al.Ferroelectrics (Print). 2009, Vol 384, pp 1046-1053, issn 0015-0193, 8 p.Conference Paper

The Influences of Excess Bi2O3 Content on the Characteristics of 0.8 (Bi0.5K0.5)TiO3-0.2 BaTi03 CeramicsCHUNG, Ho-Hua; YANG, Cheng-Fu; CHEN, Kai-Huang et al.Ferroelectrics (Print). 2009, Vol 385, pp 89-96, issn 0015-0193, 8 p.Conference Paper

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