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au.\*:("CHIH YUAN LU")

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Reverse short-channel effects on threshold voltage in submicrometer salicide devicesCHIH-YUAN LU.IEEE electron device letters. 1989, Vol 10, Num 10, pp 446-448, issn 0741-3106Article

EFFECTIVE HAMILTONIAN THEORY FOR A PERIODIC POTENTIAL WITH SLOWLY VARYING ENVELOP.CHIH YUAN LU.1978; S. NATION. CHIAO TUNG UNIV.; TWN; DA. 1978; VOL. 4; PP. 57-66; BIBL. 2 REF.Article

THE DIVERGENCE OF THE PARTITION FUNCTION OF THE ATTRACTIVE FRISCH-LLOYD MODEL OF DISORDERED SYSTEMSCHIH YUAN LU.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 18; PP. 3687-3690; BIBL. 4 REF.Article

AVERAGE PARTITION FUNCTION OF AN ELECTRON IN RANDON BINARY ALLOYCHIH YUAN LU.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 618-623; BIBL. 17 REF.Article

GENERALIZED PATH-INTEGRAL FORMALISM OF THE POLARON PROBLEM AND ITS SECOND-ORDER SEMI-INVARIANT CORRECTION TO THE GROUND-STATE ENERGYLUTTINGER JM; CHIH YUAN LU.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 10; PP. 4251-4263; BIBL. 25 REF.Article

Current transport across a grain boundary in polycrystalline semiconductorsCHIH-YUAN LU; CHAU-CHUN LU, N.Solid-state electronics. 1983, Vol 26, Num 6, pp 549-557, issn 0038-1101Article

I-V: Characteristics of polysilicon resistors at high electric field and the non-uniform conduction mechanismNICKY CHAU-CHUN LU; CHIH-YUAN LU.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 797-805, issn 0038-1101Article

Limitation of spacer thickness in titanium salicide ULSI CMOS technologySUNG, J. J; CHIH-YUAN LU.IEEE electron device letters. 1989, Vol 10, Num 11, pp 481-483, issn 0741-3106Article

A comprehensive study on p+ polysilicon-gate MOSFET's instability with fluorine incorporationJAMES SUNG, J; CHIH-YUAN LU.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 11, pp 2312-2321, issn 0018-9383, 10 p.Article

Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repairCHIH-YUAN LU; CHLIPALA, J. D; SCARFONE, L. M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1056-1062, issn 0018-9383, 7 p.Article

Computer-simulated explosion of poly-silicide links in laser-programmable redundancy for VLSI memory repairCHLIPALA, J. D; SCARFONE, L. M; CHIH-YUAN LU et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2433-2439, issn 0018-9383, 7 p., part 1Article

Study of the phase transformation and crystallization model of hydrogenated amorphous silicon thin filmsJUNG-CHUAN CHOU; SHEN-KAN HSIUNG; CHIH-YUAN LU et al.Journal of non-crystalline solids. 1988, Vol 99, Num 1, pp 23-31, issn 0022-3093Article

Submicrometer salicide CMOS devices with self-aligned shallow/deep junctionsCHIH-YUAN LU; JANMYE JAMES SUNG; YU, C.-H. D et al.IEEE electron device letters. 1989, Vol 10, Num 11, pp 487-489, issn 0741-3106Article

The conductivity transition of aggregated Bi films = La transition de conductivité de couches minces en amas de BiLIANG, N. T; CHIH-YUAN LU; SHOU-YIH WANG et al.Solid state communications. 1984, Vol 51, Num 6, pp 385-388, issn 0038-1098Article

Effects of grain-boundary trapping-state energy distribution on the activation energy of resistivity of polycrystalline-silicon filmsCHIH-YUAN LU; CHAU-CHUN LU, N; CHI-SHUN WANG et al.Solid-state electronics. 1984, Vol 27, Num 5, pp 463-466, issn 0038-1101Article

Characterization of a-Si:H phase transformation and crystallization by isothermal annealingJUNG-CHUAN CHOU; SHEN-KAN HSIUNG; CHIH-YUAN LU et al.Japanese journal of applied physics. 1987, Vol 26, Num 12, pp 1971-1977, issn 0021-4922, 1Article

Resistance switching characteristics in polycrystalline silicon film resistorsCHIH-YUAN LU; CHAU-CHUN LU, N; CHIH-CHING SHIH et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 5, pp 1193-1196, issn 0013-4651Article

Belt transport CVD processingMING-KWANG LEE; CHIH-YUAN LU; CHIN-TAY SHIH et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 11, pp 2249-2252, issn 0013-4651Article

On the semi-insulating polycrystalline silicon resistorMING-KWANG LEE; CHIH-YUAN LU; KUN-ZEN CHANG et al.Solid-state electronics. 1984, Vol 27, Num 11, pp 995-1001, issn 0038-1101Article

A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon filmsCHAU-CHUN LU, N; GERZBERG, L; CHIH-YUAN LU et al.I.E.E.E. transactions on electron devices. 1983, Vol 30, Num 2, pp 137-149, issn 0018-9383Article

MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORSCHAU CHUN LU N; GERZBERG L; CHIH YUAN LU et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 818-830; BIBL. 40 REF.Article

A NEW CONDUCTION MODEL FOR POLYCRYSTALLINE SILICON FILMSCHAU CHUN LU N; GERZBERG L; CHIH YUAN LU et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 4; PP. 95-98; BIBL. 18 REF.Article

Recovery phenomenon and local field sensitivity on wafer charge-up effect of magnetically enhanced reactive ion etch systemBING-YUE TSUI; SHUNN-HER LIU; GEENG-LIH LIN et al.IEEE electron device letters. 1995, Vol 16, Num 2, pp 64-66, issn 0741-3106Article

Transconductance enhancement due to back bias for submicron NMOSFETJYH-CHYURN GUO; MING-CHIEN CHANG; CHIH-YUAN LU et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 2, pp 288-294, issn 0018-9383Article

Performance and reliability evaluation of high dielectric LDD spacer on deep sub-micrometer LDD MOSFETJYH-CHYUNR GUO; CHIH-YUAN LU; CHING-HSIANG HSU, C et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 7, pp 1239-1248, issn 0018-9383Article

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