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au.\*:("CHIN AK")

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EVALUATION OF DEFECTS IN CDTE USING A SIMPLE CATHODOLUMINESCENCE TECHNIQUECHIN AK.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 369-374; BIBL. 24 REF.Article

NEAR-INFRA-RED ABSORPTION USING INGAASP SOURCESTEMKIN H; CHIN AK.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 11; PP. 437-439; BIBL. 6 REF.Article

RELIABILITY OF INGAASP LIGHT EMITTING DIODES AT HIGH CURRENT DENSITYZIPFEL CL; CHIN AK; DIGIUSEPPE MA et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 310-316; BIBL. 14 REF.Article

IN0,53)GA0,47)AS CONTACT LAYER FOR 1,3 MU M LIGHT-EMITHING DIODESTEMKIN H; CHIN AK; DIGIUSEPPE MA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 703-705; BIBL. 8 REF.Article

TRANSMISSION CATHODOLUMINESCENCE: A NEW SEM TECHNIQUE TO STUDY DEFECTS IN BULK SEMICONDUCTOR SAMPLESCHIN AK; TEMKIN H; ROEDEL RJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 7; PP. 476-478; BIBL. 11 REF.Article

THE RELIABILITY OF SCHOTTKY BARRIER RESTRICTED CRAAS/GA AIAS LEDSCHIN AK; ZIPFEL CL; DUTT BV et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 1; PP. 1308-1312; BIBL. 23 REF.Article

SCHOTTKY BARRIER RESTRICTED GAALAS LASERTEMKIN H; CHIN AK; DUTT BV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 701-703; BIBL. 11 REF.Article

TRANSMISSION CATHODOLUMINESCENCECHIN AK; TEMKIN H; MAHAJAN S et al.1981; BELL SYST. TECH. J.; ISSN 0005-8580; USA; DA. 1981; VOL. 60; NO 9; PP. 2187-2226; BIBL. 74 REF.Article

COMPARISON OF SINGLE HETEROSTRUCTURE AND DOUBLE HETEROSTRUCTURE GAAS-GAALAS LEDS FOR OPTICAL DATA LINKSCHIN AK; BERKSTRESSER GW; KERAMIDAS VG et al.1979; BELL SYST. TECH. J.; USA; DA. 1979; VOL. 58; NO 7; PP. 1579-1591; BIBL. 10 REF.Article

FAR-INFRARED SPIN AND COMBINATION RESONANCES OF THE HOLES IN BISMUTH.SMITH BT; CHIN AK; SIEVERS AJ et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 9; PP. 1051-1054; BIBL. 7 REF.Article

SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI INSULATING GAAS SUBSTRATESCHIN AK; VON NEIDA AR; CARUSO R et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2386-2388; BIBL. 10 REF.Article

IMAGING OF DISLOCATIONS IN INP USING TRANSMISSION CATHODOLUMINESCENCECHIN AK; MAHAJAN S; BALLMAN AA et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 10; PP. 784-786; BIBL. 15 REF.Article

COMPETING PROCESSES IN LONG TERM ACCELERATED AGING OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LIGHT EMITTING DIODESZIPFEL CL; SAUL RH; CHIN AK et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1781-1786; BIBL. 20 REF.Article

PERFECTION OF HOMOEPITAXIAL LAYERS GROWN ON (001) INP SUBSTRATESMAHAJAN S; KERAMAIDAS VG; CHIN AK et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 255-258; BIBL. 13 REF.Article

FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSIONCHIN AK; DUTT BV; TEMKIN H et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 11; PP. 924-926; BIBL. 16 REF.Article

CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING DIODESCHIN AK; ZIPFEL CL; MAHAJAN S et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 555-557; BIBL. 14 REF.Article

EFFECT OF P-N JUNCTION POSITION ON THE PERFORMANCE OF INGAASP LIGHT EMITTING DIODESTEMKIN H; JOYCE WB; CHIN AK et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 8; PP. 745-747; BIBL. 8 REF.Article

INGA ASP LEDS FOR 1.3.MU M OPTICAL TRANSMISSIONTEMKIN H; ZIPFEL CL; DIGIUSEPPE MA et al.1983; BELL SYSTEM TECHNICAL JOURNAL; ISSN 0005-8580; USA; DA. 1983; VOL. 62; NO 1; PART. 1; PP. 1-24; BIBL. 46 REF.Article

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