NONLINEARITY IN POWER-OUTPUT-CURRENT CHARACTERISTICS OF STRIPE-GEOMETRY INJECTION LASERS.CHINONE N.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3237-3243; BIBL. 18 REF.Article

SPECTRAL BEHAVIORS OF SPONTANEOUSLY PULSING DOUBLE-HETEROSTRUCTURE INJECTION LASERS.CHINONE N; ITO R.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 3; PP. 575-576; BIBL. 8 REF.Article

ELASTO-OPTIC POLARIZATION MEASUREMENT IN OPTICAL FIBERCHINONE N; ULRICH R.1981; OPT. LETTERS; USA; DA. 1981 PUBL. 1980; VOL. 6; NO 1; PP. 16-18; BIBL. 9 REF.Article

EXCITON EFFECTS ON LUMINESCENCE OF UNDOPED ACTIVE LAYERS IN GAAS-GA_1-XAL_XAS DOUBLE-HETEROSTRUCTURE CRYSTALS AT TEMPERATURES BETWEEN 77 AND 300 K.NAKASHIMA H; CHINONE N; ITO R et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3092-3095; BIBL. 15 REF.Article

STABILIZATION OF SEMICONDUCTOR LASER OUTPUTS BY A MIRROR CLOSE TO A LASER FACETCHINONE N; AIKI K; ITO R et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 990-992; BIBL. 12 REF.Article

EFFECTS OF FACET COATINGS ON THE DEGRADATION CHARACTERISTICS OF GAAS-GA_1-XAL_XAS DH LASERS.SHIMA Y; CHINONE N; ITO R et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 9; PP. 625-627; BIBL. 7 REF.Article

Suppression of leakage current in InGaAsP/InP buried heterostructure laser by InAlAs strained current-blocking layersOHTOSHI, T; CHINONE, N.Electronics Letters. 1991, Vol 27, Num 1, pp 12-13, issn 0013-5194Article

LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED AL_XGA_1-X AS INJECTION LASERSNAKAMURA M; AIKI K; CHINONE N et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 9; PP. 4644-4648; BIBL. 14 REF.Article

GA_XIN_1-XAS_YO_1-Y/INP RIB-WAVEGUIDE INJECTION LASERS MADE BY ONE-STEP LPEDOI A; CHINONE N; AIKI K et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 6; PP. 393-395; BIBL. 11 REF.Article

X-RAY TOPOGRAPHIC OBSERVATION OF DARK-LINE DEFECTS IN GAAS-GA_1-XAL_XAS DOUBLE-HETEROSTRUCTURE WAFERS.KISHINO S; NAKASHIMA H; CHINONE N et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 2; PP. 98-100; BIBL. 17 REF.Article

HIGH-EFFICIENT (GAAL)AS BURIED-HETEROSTRUCTURE LASERS FOR ANALOG COMMUNICATIONSCHINONE N; SAITO K; SHIGE N et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; 2.3.1-2.3.4; BIBL. 4 REF.Conference Paper

Recent trends in fiber-optic transmission technologies for information and communications networksCHINONE, N; MAEDA, M.Hitachi review. 1994, Vol 43, Num 2, pp 41-46, issn 0018-277XArticle

SEMICONDUCTOR LASERS WITH A THIN ACTIVE LAYER (>0.1 MU M) FOR OPTICAL COMMUNICATIONS.CHINONE N; NAKASHIMA H; IKUSHIMA I et al.1978; APPL. OPT.; U.S.A.; DA. 1978; VOL. 17; NO 2; PP. 311-315; BIBL. 16 REF.Article

Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasersUOMI, K; TSUCHIYA, T; AOKI, M et al.Applied physics letters. 1991, Vol 58, Num 7, pp 675-677, issn 0003-6951Article

Novel method of determining conduction-band discontinuities by using monolayer energy splitting in quantum-well structuresUOMI, K; SASAKI, S; TSUCHIYA, T et al.Journal of applied physics. 1990, Vol 67, Num 2, pp 904-907, issn 0021-8979Article

Factors limiting the spectral linewidth of CPM-MQW-DFB lasersOKAI, M; TSUCHIYA, T; TAKAI, A et al.IEEE photonics technology letters. 1992, Vol 4, Num 6, pp 526-528Article

Modulation-doped multi-quantum well (MD-MQW) lasers. II, ExperimentUOMI, K; MISHIMA, T; CHINONE, N et al.Japanese journal of applied physics. 1990, Vol 29, Num 1, pp 88-94, issn 0021-4922, 1Article

Novel method to fabricate corrugation for a λ/4-shifted distributed feedback laser using a grating photomaskOKAI, M; TSUJI, S; CHINONE, N et al.Applied physics letters. 1989, Vol 55, Num 5, pp 415-417, issn 0003-6951Article

Ultrahigh-speed 1.55 μm λ/4-shifted DFB PIQ-BH lasers with bandwidth of 17 GHzUOMI, K; NAKANO, H; CHINONE, N et al.Electronics Letters. 1989, Vol 25, Num 10, pp 668-669, issn 0013-5194, 2 p.Article

Wavelength-tunable three-electrode DBR laser with a thin-active layer in tuning regionsSAKANO, S; OKA, A; CHINONE, N et al.IEEE photonics technology letters. 1991, Vol 3, Num 10, pp 866-868Article

Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasersUOMI, K; MISHIMA, T; CHINONE, N et al.Applied physics letters. 1987, Vol 51, Num 2, pp 78-80, issn 0003-6951Article

High relaxation oscillation frequency (beyond 10 GHz) of GaAlAs multiquantum well lasersVOMI, K; CHINONE, N; OHTOSHI, T et al.Japanese journal of applied physics. 1985, Vol 24, Num 7, pp L539-L541, issn 0021-4922Article

Mode-hopping noise in index-guided semiconductor lasers and its reduction by saturable absorbersCHINONE, N; KURODA, T; OHTOSHI, T et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 8, pp 1264-1270, issn 0018-9197Article

Tunable DFB laser with a striped thin-film heaterSAKANO, S; TSUCHIYA, T; SUZUKI, M et al.IEEE photonics technology letters. 1992, Vol 4, Num 4, pp 321-323Article

Stabilization of the longitudinal mode against spatial hole burning in λ/4-shifted DFB lasers by quantum size effectAOKI, M; UOMI, K; TSUCHIYA, T et al.IEEE photonics technology letters. 1990, Vol 2, Num 9, pp 617-619Article