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BAU LINES HEIZWERKES MIT 174 MW KESSELLEISTUNG IN HEIDELBERG. HINWEIRE AUF SEINE BESONDEREN KONSTRUKTIVEN MERHMALE = CONSTRUCTION OF A HEATING CENTRAL PLANT FITTED WITH 174 MW BOILER IN HEIDELBERG. REMARKS ON ITS CONSTRUCTIONAL FEATURE PECULARITIES = CONSTRUCTION D'UNE CENTRALE DE CHAUFFAGE AVEC DES CHAUDIERES DE 174 MW DE PUISSANCE. REMARQUES SUR SES CARACTERISTIQUES PARTICULIERES DE CONSTRUCTIONCHRISTOU A.1979; FERNWAERME INTERNATION.; DEU; DA. 1979; VOL. 8; NO 5; PP. 253-255; ABS. ENG/FREArticle
STABILITY OF THE MAGNETIC PHASE TRANSITION IN SHOCKED FE-NI ALLOYSCHRISTOU A.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 4; PP. 833-852; BIBL. 26 REF.Serial Issue
MOISTURE DIFFUSION THROUGH HYBRID-CIRCUIT ENCAPSULANTSCHRISTOU A.1979; ELECTRON. PACKAG. PRODUCT.; USA; DA. 1979; VOL. 19; NO 4; PP. 91-100; (8 P.); BIBL. 8 REF.Article
SOLID FORMATION IN AU: GE/NI, AG/IN/GE, IN/AU: GE, GAAS OHMIC CONTACT SYSTEMSCHRISTOU A.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 141-149; BIBL. 10 REF.Article
RECOVERY OF FLOW STRESS AND ELECTRICAL RESISTIVITY OF SHOCK-DEFORMED B.C.C. FE-MN ALLOYSCHRISTOU A.1972; PHILOS. MAG.; G.B.; DA. 1972; VOL. 26; NO 1; PP. 97-111; BIBL. 16 REF.Serial Issue
K. D. Schinas und das erste Rektorat an der Ottonischen Universität : 1837-1838 = C. D. Schinas and the first Rectorship to the Athens University : 1837-1838 = C. D. Schinas et le premier rectorat à l'université d'Athènes : 1837-1838CHRISTOU, A.Balkan studies. 1994, Vol 35, Num 2, pp 301-316, issn 0005-4313, 18 p.Article
FLUORIDE ION CONTAMINATION AND TIO FILM MIGRATION IN THE TI-PT-AU METALLIZATION.CHRISTOU A; DAY HM.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1710-1713; BIBL. 10 REF.Article
Reliability problems in state-of-the-art GaAs devices and circuitsCHRISTOU, A.Quality and reliability engineering international. 1989, Vol 5, Num 1, pp 37-46, issn 0748-8017Article
STABLE TANTALUM SILICIDE SCHOTTKY BARRIER ON N-TYPE GALLIUM ARSENIDE EVALUATED AT ELEVATED TEMPERATURESTSENG WF; CHRISTOU A.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 9; PP. 330-332; BIBL. 5 REF.Article
STUDIES OF ALUMINUM SCHOTTKY BARRIER GATE ANNEALING ON GAAS FET STRUCTURES.SLEGER K; CHRISTOU A.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 4; PP. 677-684; BIBL. 10 REF.Article
ANNEALING KINETICS OF SPUTTERED GOLD-TUNGSTEN AND GOLD-MOLYBDENUM FILMSCHRISTOU A; DAY HM.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 12; PP. 5259-5265; BIBL. 18 REF.Article
Development of a high deposition rate technique for device quality thin films of hydrogenated amorphous siliconCHRISTOU, A.European Communities Contractors. Meeting. 1. 1987, pp 81-86Conference Paper
AU-MG IMPROVED OHMIC CONTACTS TO P-GAASPAPANICOLAOU NA; CHRISTOU A.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 11; PP. 418-420; BIBL. 7 REF.Article
SHOCK DEFORMATION OF K-STATE IN NI-CR ALLOYSCHRISTOU A; BROWN N.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 2; PP. 281-296; BIBL. 20 REF.Serial Issue
DEPOSITION OF THIN REFRACTORY MIS STRUCTURES ON INPCHRISTOU A; ANDERSON WT JR.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 3; PP. 585-600; BIBL. 16 REF.Article
MATERIAL REACTIONS AND BARRIER HEIGHT VARIATIONS IN SINTERED AL-INP SCHOTTKY DIODESCHRISTOU A; ANDERSON WT JR.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 857-863; BIBL. 17 REF.Article
ON THE NATURE OF DISLOCATION LOOPS IN AS-IMPLANTED AND POSTANNEALED SI WAFERS.PAVLIDIS P; ECONOMOU NA; CHRISTOU A et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3612-3613; BIBL. 12 REF.Article
GAAS FET FAILURE MECHANISMS DUE TO HIGH HUMIDITY AND IONIC CONTAMINATIONANDERSON WT JR; CHRISTOU A.1980; I.E.E.E. TRANS. RELIABIL.; USA; DA. 1980; VOL. 29; NO 3; PP. 222-231; BIBL. 7 REF.Article
LASER ANNEALED TA/GE AND NI/GE OHMIC CONTACTS TO GAASANDERSON WT JR; CHRISTOU A; GIULIANI JF et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 5; PP. 115-117; BIBL. 12 REF.Article
SMOOTH AND CONTINUOUS OHMIC CONTACTS TO GAAS USING EPITAXIAL GE FILMS.ANDERSON WT JR; CHRISTOU A; DAVEY JE et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2998-3000; BIBL. 13 REF.Article
THIN MBE GAAS MILLIMETRE-WAVE MIXER DIODE USING GE SUBSTRATECHRISTOU A; DAVEY JE; COVINGTON D et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 367-368; BIBL. 4 REF.Article
IDEALITY AND NOISE FIGURE CHARACTERISTICS OF R.F. SPUTTERED MILLIMETRE GAAS DIODESANAND Y; CHRISTOU A; DAY H et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 15; PP. 581-583; BIBL. 9 REF.Article
RELIABILITY OF HYBRID ENCAPSULATION BASED ON FLUORINATED POLYMERIC MATERIALSCHRISTOU A; GRIFFITH JR; WILKINS BR et al.1979; IEEE TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 1; PP. 77-83; BIBL. 12 REF.Article
CRYSTALLINE DEFECTS IN SOLID PHASE EPITAXY SI FILMS DEPOSITED AT ELEVATED TEMPERATURES.CHRISTOU A; DAVEY JE; TSENG W et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 10; PP. 683-685; BIBL. 10 REF.Article
DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMSANDERSON WT JR; CHRISTOU A; DAVEY JE et al.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 4; PP. 430-435; BIBL. 16 REF.Article