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TRANSITION DE PHASE ETAT AMORPHE-POLYCRISTAL DANS DES COUCHES MINCES DE DISILICIURE DE CHROMETROFIMOV VI; SELIVERSTOV LA; BESSONOV VI et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 3; PP. 258-262; H.T. 2; BIBL. 18 REF.Article

HOCHTEMPERATUROXYDATION DER CHROM-, MOLYBDAN- UND WOLFRAMDISILIZIDE IN SAUERSTOFF = OXYDATION A HAUTE TEMPERATURE DES SILICIURES DE CHROME, MOLYBDENE ET TUNGSTENE DANS L'OXYGENESAMSONOW GW; LAWRENKO WA; GLEBOW LA et al.1974; REV. INTERNATION. HAUTES TEMPER. REFRACT.; FR.; DA. 1974; VOL. 11; NO 3; PP. 205-213; ABS. FR. ANGL.; BIBL. 16 REF.Article

PROPRIETES THERMODYNAMIQUES DES SILICIURES DE CHROMEEREMENKO VN; PUKASHENKO GM; SIDORKO VR et al.1972; POROSHKOV. METALLURG. U.S.S.R.; S.S.S.R.; DA. 1972; VOL. 12; NO 7; PP. 61-65; BIBL. 10 REF.Serial Issue

THERMODYNAMIC PROPERTIES OF VANADIUM, CHROMIUM AND MANGANESE SILICIDES AT ELEVATED TEMPERATURESYEREMENKO VN; LUKASHENKO GM; SIDORKO VR et al.1975; REV. INTERNATION. HAUTES TEMPER. REFRACT.; FR.; DA. 1975; NO 3; PP. 237-240; ABS. FR. ALLEM.; BIBL. 22 REF.Article

THERMODYNAMIC PROPERTIES OF THE TUNGSTEN-SILICON AND CHROMIUM-SILICON SYSTEMSCHART TG.1975; METAL SCI.; G.B.; DA. 1975; VOL. 9; NO 11; PP. 504-509; BIBL. 40 REF.Article

DETERMINATION OF THE DIFFUSING SPECIES AND MECHANISM OF DIFFUSION DURING CRSI2 FORMATION, USING 31SI AS A MARKERBOTHA AP; PRETORIUS R; KRITZINGER S et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 412-414; BIBL. 18 REF.Article

ETUDE DES CONDITIONS DE LA SYNTHESE DE CERTAINS SILICIURES DES METAUX DE TRANSITION EN PHASE SOLIDEVORONOV BK; DUDKIN LD; TRUSOVA NN et al.1974; POROSHKOV. METALLURG., U.S.S.R.; S.S.S.R.; DA. 1974; NO 12; PP. 13-17; ABS. ANGL.; BIBL. 7 REF.Article

PHONON DISPERSION OF CR3SIWEISS L; RUMYANTSEV AY.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K75-K78; BIBL. 4 REF.Article

STUDIES OF THE GROWTH AND OXIDATION OF METAL-SILICIDES USING RADIOACTIVE 31SI AS TRACERPRETORIUS R.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 107-112; BIBL. 14 REF.Article

GROWTH OF CHROMIUM SILICIDE, CR3SI, CRYSTALSJORGENSEN J; RASMUSSEN SE.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 47; NO 1; PP. 124-126; BIBL. 4 REF.Article

STRUCTURE FINE DE LA LIMITE D'ABSORPTION K DU SILICIUM DANS LES SILICIURES DES METAUX DE TRANSITIONSOKOLENKO VI; ZHURAKOVSKIJ EA; SOKOLENKO AI et al.1981; METALLOFIZIKA (KIEV); ISSN 0368-9662; UKR; DA. 1981; VOL. 3; NO 5; PP. 48-52; BIBL. 8 REF.Article

Semitransparent silicide electrodes utilizing interaction between hydrogenated amorphous silicon and metalsSEKI, K; YAMAMOTO, H; SASANO, A et al.Applied physics letters. 1984, Vol 44, Num 7, pp 682-683, issn 0003-6951Article

Stability of CrSi2 grown from the meltACKLAND, G. J.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 1, pp 012106.1-012106.2, issn 1098-0121Article

Kinetic studies of the formation of nanocrystalline chromium silicide-silicon carbide from homogeneous amorphous precursor powdersLUO, P; STRUTT, P. R; DEVEREUX, O. F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 31, Num 3, pp 243-248, issn 0921-5107Article

Preparation of CrSi2 powders by solid-state reaction between chromium and silicon powders with addition of chloridesMIYAMOTO, M; TAKAHASHI, S; OKADA, S et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 1995, Vol 103, Num 9, pp 944-948, issn 0914-5400Article

Principal component analysis for refractory metal silicide investigations with Auger electron spectroscopyATZRODT, V; LANGE, H.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 373-378, issn 0031-8965Article

Crystal growth of chromium silicides by chemical vapour transport with halogens. I : Growth of chromium disilicide single crystalsKRAUSZE, R; KHRISTOV, M; PESHEV, P et al.Zeitschrift für anorganische und allgemeine Chemie (1950). 1989, Vol 579, pp 231-239, issn 0044-2313Article

CHEMICAL VAPOR GROWTH OF CR5SI3 WHISKERS AND HOLLOW CRYSTALSMOTOJIMA S; SUGIYAMA K.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 3; PP. 611-613; BIBL. 5 REF.Article

RADIOACTIVE SILICON TRACER STUDIES OF THE FORMATION OF CRSI2 ON PD2SI AND PTSI.PRETORIUS R; OLOWOLAFE JO; MAYER JW et al.1978; PHILOS. MAG., A; G.B.; DA. 1978; VOL. 37; NO 3; PP. 327-336; BIBL. 12 REF.Article

THEORETICAL CONSIDERATIONS ON ION CHANNELING EFFECT THROUGH SILICIDE-SILICON INTERFACEISHIWARA H; SAITOH S; HIKOSAKA K et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 5; PP. 843-848; BIBL. 14 REF.Article

INFLUENCE DE LA NATURE DE L'ATOME NON METALLIQUE SUR L'ACTIVITE CATALYTIQUE DES COMPOSES DE TYPE METALLIQUE DU CHROME ET DU TITANE DANS LA REACTION D'OXYDATION DE L'OXYDE DE CARBONEKHARLAMOV AI.1980; KINET. KATAL.; ISSN 0453-8811; SUN; DA. 1980; VOL. 21; NO 6; PP. 1476-1481; BIBL. 23 REF.Article

FORMATION KINETICS OF CRSI2 FILMS ON SI SUBSTRATES WITH AND WITHOUT INTERPOSED PD2SI LAYER.OLOWOLAFE JO; NICOLET MA; MAYER JW et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 12; PP. 5182-5186; BIBL. 13 REF.Article

CINETIQUE DE CROISSANCE D'UNE COUCHE DE CRSI2TROFIMOV VI; SELIVERSTOV LA.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 5; PP. 1063-1065; BIBL. 10 REF.Article

PERIMETRE DU FRONT DE CRISTALLISATION D'UNE COUCHE MINCETROFIMOV VI; OSADCHENKO VA.1982; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1982; VOL. 27; NO 4; PP. 824-826; BIBL. 6 REF.Article

STRUCTURAL MORPHOLOGY AND ELECTRONIC PROPERTIES OF THE SI-CR INTERFACEFRANCIOSI A; PETERMAN DJ; WEAVER JH et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 8; PP. 4981-4993; BIBL. 35 REF.Article

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