THERMODYNAMIC PROPERTIES OF VANADIUM, CHROMIUM AND MANGANESE SILICIDES AT ELEVATED TEMPERATURESYEREMENKO VN; LUKASHENKO GM; SIDORKO VR et al.1975; REV. INTERNATION. HAUTES TEMPER. REFRACT.; FR.; DA. 1975; NO 3; PP. 237-240; ABS. FR. ALLEM.; BIBL. 22 REF.Article

THERMODYNAMIC PROPERTIES OF THE TUNGSTEN-SILICON AND CHROMIUM-SILICON SYSTEMSCHART TG.1975; METAL SCI.; G.B.; DA. 1975; VOL. 9; NO 11; PP. 504-509; BIBL. 40 REF.Article

ETUDE DES CONDITIONS DE LA SYNTHESE DE CERTAINS SILICIURES DES METAUX DE TRANSITION EN PHASE SOLIDEVORONOV BK; DUDKIN LD; TRUSOVA NN et al.1974; POROSHKOV. METALLURG., U.S.S.R.; S.S.S.R.; DA. 1974; NO 12; PP. 13-17; ABS. ANGL.; BIBL. 7 REF.Article

PHONON DISPERSION OF CR₃SIWEISS L; RUMYANTSEV AY.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K75-K78; BIBL. 4 REF.Article

STRUCTURE FINE DE LA LIMITE D'ABSORPTION K DU SILICIUM DANS LES SILICIURES DES METAUX DE TRANSITIONSOKOLENKO VI; ZHURAKOVSKIJ EA; SOKOLENKO AI et al.1981; METALLOFIZIKA (KIEV); ISSN 0368-9662; UKR; DA. 1981; VOL. 3; NO 5; PP. 48-52; BIBL. 8 REF.Article

Semitransparent silicide electrodes utilizing interaction between hydrogenated amorphous silicon and metalsSEKI, K; YAMAMOTO, H; SASANO, A et al.Applied physics letters. 1984, Vol 44, Num 7, pp 682-683, issn 0003-6951Article

Principal component analysis for refractory metal silicide investigations with Auger electron spectroscopyATZRODT, V; LANGE, H.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 373-378, issn 0031-8965Article

Crystal growth of chromium silicides by chemical vapour transport with halogens. I : Growth of chromium disilicide single crystalsKRAUSZE, R; KHRISTOV, M; PESHEV, P et al.Zeitschrift für anorganische und allgemeine Chemie (1950). 1989, Vol 579, pp 231-239, issn 0044-2313Article

CHEMICAL VAPOR GROWTH OF CR₅SI₃ WHISKERS AND HOLLOW CRYSTALSMOTOJIMA S; SUGIYAMA K.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 3; PP. 611-613; BIBL. 5 REF.Article

RADIOACTIVE SILICON TRACER STUDIES OF THE FORMATION OF CRSI₂ ON PD₂SI AND PTSI.PRETORIUS R; OLOWOLAFE JO; MAYER JW et al.1978; PHILOS. MAG., A; G.B.; DA. 1978; VOL. 37; NO 3; PP. 327-336; BIBL. 12 REF.Article

PERIMETRE DU FRONT DE CRISTALLISATION D'UNE COUCHE MINCETROFIMOV VI; OSADCHENKO VA.1982; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1982; VOL. 27; NO 4; PP. 824-826; BIBL. 6 REF.Article

STRUCTURAL MORPHOLOGY AND ELECTRONIC PROPERTIES OF THE SI-CR INTERFACEFRANCIOSI A; PETERMAN DJ; WEAVER JH et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 8; PP. 4981-4993; BIBL. 35 REF.Article

Reflection high-energy electron diffraction patterns of CrSi₂ films on (111) siliconMAHAN, J. E; GEIB, K. M; ROBINSON, G. Y et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 1, pp 64-68, issn 0734-211XArticle

Temperature dependence of a CrSi₂ Schottky barrier on n-type and p-type SiANILTÜRK, Ö. S; TURAN, R.Semiconductor science and technology. 1999, Vol 14, Num 12, pp 1060-1064, issn 0268-1242Article

The crystal structure of Cr₂Si₂Te₆: corrigendumMARSH, R. E.Journal of solid state chemistry (Print). 1988, Vol 77, Num 1, pp 190-191, issn 0022-4596Article

Herstellung von Cr/Si-Schichten unterschiedlicher Zusammensetzung mittels Ionenstrahlzerstäubung und Untersuchung ihrer elektrischen Eigenschaften = Préparation de couches minces de Cr/Si avec différentes compositons par pulvérisation de faisceaux d'ions et étude des propriétés électriques = Preparation of Cr/Si films with different composition by ion-beam sputtering and investigation of their electrical propertiesHELMS, H; PÄTZ, W; FRIEDEMANN, C et al.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1984, Vol 26, Num 5, pp 660-664, issn 0372-7610Article

Partially reactive d.c. magnetron sputtering - a key to new understanding of reactive plasma sputter deposition?SOBE, G.Surface & coatings technology. 1995, Vol 74-75, Num 1-3, pp 80-84, issn 0257-8972, 1Conference Paper

Effect of stresses in electronic properties of chromium disilicideSHAPOSHNIKOV, V. L; KRIVOSHEEVA, A. V; KRIVOSHEEV, A. E et al.Microelectronic engineering. 2002, Vol 64, Num 1-4, pp 219-223, issn 0167-9317Conference Paper

Electrolytic powders of chromium silicides and boridesMALYSHEV, V. V; KUSHKHOV, KH. B; SHAPOVAL, V. I et al.Poroškovaâ metallurgiâ (Kiev). 1994, Num 1-2, pp 11-14, issn 0032-4795Article

Electron transport in the Si(111)-Cr(√3 × √3)R30°-αSi surface phase and in epitaxial films of CrSi, CrSi2 on Si(111)GASPAROV, V. A; GRAZHULIS, V. A; BONDAREV, V. V et al.Surface science. 1993, Vol 292, Num 3, pp 298-304, issn 0039-6028Article

PLANAR DEFECTS IN CRYSTALS OF SOME TETRAHEDRALLY CLOSE-PACKED ALLOYSSTENBERG L.1979; CHEM. SCR.; SWE; DA. 1979; VOL. 14; NO 1-5; PP. 219-225; BIBL. 6 REF.Conference Paper

PHASE FORMATION IN CR-SI THIN-FILM INTERACTIONS = FORMATION D'UNE PHASE DANS LES INTERACTIONS DE COUCHES MINCES CR-SICOLGAN EG; TSAUR BY; MAYER JW et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 938-940; BIBL. 10 REF.Article

COMPOUND FORMATION BETWEEN AMORPHOUS SILICON AND CHROMIUM = FORMATION DE COMPOSE ENTRE SI AMORPHE ET CRYACOBI BG; SZADKOWSKI AJ; ZUKOTYNSKI S et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6424-6425; BIBL. 5 REF.Article

INTERACTION BETWEEN CHROMIUM OXIDE AND CHROMIUM SILICIDECROS A; POLLAK RA; TU KN et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 1; PP. 258-259; BIBL. 9 REF.Article

DEBYE CLASSES IN A15 COMPOUNDS = CLASSES DE DEBYE DANS LES COMPOSES A15STAUDENMANN JL; DEFACIO B; TESTARDI LR et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 11; PP. 6446-6463; BIBL. 73 REF.Article