Effects of sulfur passivation on germanium MOS capacitors with HfON gate dielectricRUILONG XIE; CHUNXIANG ZHU.IEEE electron device letters. 2007, Vol 28, Num 11, pp 976-979, issn 0741-3106, 4 p.Article

Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO₂ and HfO₂/SiPO₂ gate dielectric stacksSAMANTA, Piyas; CHUNXIANG ZHU; MANSUN CHAN et al.Microelectronics and reliability. 2010, Vol 50, Num 12, pp 1907-1914, issn 0026-2714, 8 p.Article

Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnectsNGWAN, V. C; CHUNXIANG ZHU; KRISHNAMOORTHY, Ahila et al.IEEE international reliability physics symposium. 2004, pp 571-572, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

The role of nitrogen on charge-trapping-induced V_th instability in HfAlON high-κ gate dielectric with metal and poly-si gate electrodesXIONGFEI YU; MINGBIN YU; CHUNXIANG ZHU et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 8, pp 1972-1977, issn 0018-9383, 6 p.Article

Advanced HfTaON/SiO₂ gate stack with high mobility and low leakage current for low-standby-power applicationXIONGFEI YU; MINGBIN YU; CHUNXIANG ZHU et al.IEEE electron device letters. 2006, Vol 27, Num 6, pp 498-501, issn 0741-3106, 4 p.Article

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-k gate dielectric and metal gateSHIYANG ZHU; SINGH, J; CHUNXIANG ZHU et al.Solid-state electronics. 2006, Vol 50, Num 2, pp 232-236, issn 0038-1101, 5 p.Article

Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applicationsCHUNXIANG ZHU; CHO, Byung-Jin; LI, Ming-Fu et al.Chemical vapor deposition (Print). 2006, Vol 12, Num 2-3, pp 165-171, issn 0948-1907, 7 p.Article

A new polysilicon CMOS self-aligned double-gate TFT technologyZHIBIN XIONG; HAITAO LIU; CHUNXIANG ZHU et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2629-2633, issn 0018-9383, 5 p.Article

Characteristics of self-aligned gate-first ge p-and n-channel MOSFETs using CVD HfO₂ gate dielectric and Si surface passivationNAN WU; QINGCHUN ZHANG; BALASUBRAMANIAN, N et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 4, pp 733-741, issn 0018-9383, 9 p.Article

Gate-first germanium nMOSFET with CVD HfO₂ gate dielectric and silicon surface passivationNAN WU; QINGCHUN ZHANG; CHAN, D. S. H et al.IEEE electron device letters. 2006, Vol 27, Num 6, pp 479-481, issn 0741-3106, 3 p.Article

Modeling the Negative Quadratic VCC of SiO₂ in MIM CapacitorPHUNG, Thanh Hoa; STEINMANN, Philipp; WISE, Rick et al.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1671-1673, issn 0741-3106, 3 p.Article

Origin of Different Dependences of Open-Circuit Voltage on the Electrodes in Layered and Bulk Heterojunction Organic Photovoltaic CellsCHUNFU ZHANG; TONG, Shi-Wun; JIANG, Chang-Yun et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 2, pp 397-405, issn 0018-9383, 9 p.Article

Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLOW, Tony; LI, Ming-Fu; SAMUDRA, Ganesh et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 11, pp 2430-2439, issn 0018-9383, 10 p.Article

Polymer memories : Bistable electrical switching and device performanceLING, Qi-Dan; LIAW, Der-Jang; TEO, Eric Yeow-Hwee et al.Polymer (Guildford). 2007, Vol 48, Num 18, pp 5182-5201, issn 0032-3861, 20 p.Article

An Organic-Based Diode―Memory Device With Rectifying Property for Crossbar Memory Array ApplicationsTEO, Eric Yeow Hwee; CHUNFU ZHANG; SIEW LAY LIM et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 487-489, issn 0741-3106, 3 p.Article

Drive-current enhancement in ge n-channel MOSFET using laser annealing for source/drain activationQINGCHUN ZHANG; JIDONG HUANG; NAN WU et al.IEEE electron device letters. 2006, Vol 27, Num 9, pp 728-730, issn 0741-3106, 3 p.Article

Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectricsSAMANTA, Piyas; TSZ YIN MAN; CHAN, Alain Chun Keung et al.Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1393-1401, issn 0268-1242, 9 p.Article

Effects of Cathode Confinement on the Performance of Polymer/Fullerene Photovoltaic Cells in the Thermal TreatmentCHUNFU ZHANG; YUE HAO; TONG, Shi-Wun et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 3, pp 835-842, issn 0018-9383, 8 p.Article

Polymer electronic memories : Materials, devices and mechanismsLING, Qi-Dan; LIAW, Der-Jang; CHUNXIANG ZHU et al.Progress in polymer science. 2008, Vol 33, Num 10, pp 917-978, issn 0079-6700, 62 p.Article

A flexible polymer memory deviceLIANG LI; LING, Qi-Dan; LIM, Siew-Lay et al.Organic electronics. 2007, Vol 8, Num 4, pp 401-406, issn 1566-1199, 6 p.Article

A novel surface passivation process for HfO₂ Ge MOSFETsNAN WU; QINGCHUN ZHANG; CHUNXIANG ZHU et al.DRC : Device research conference. 2004, pp 19-20, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICsSUN JUNG KIM; BYUNG JIN CHO; LI, M.-F et al.Symposium on VLSI Technology. sd, pp 218-219, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Some issues in advanced CMOS gate stack performance and reliabilityLI, Ming-Fu; WANG, X. P; SHEN, C et al.Microelectronic engineering. 2011, Vol 88, Num 12, pp 3377-3384, issn 0167-9317, 8 p.Conference Paper

Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groupsTEO, E. Y. H; LING, Q. D; SONG, Y et al.Organic electronics. 2006, Vol 7, Num 3, pp 173-180, issn 1566-1199, 8 p.Article

Electrically bistable thin-film device based on PVK and GNPs polymer materialSONG, Y; LING, Q. D; LIM, S. L et al.IEEE electron device letters. 2007, Vol 28, Num 2, pp 107-110, issn 0741-3106, 4 p.Article