Group III nitride and SiC based MEMS and NEMS : materials properties, technology and applicationsCIMALLA, V; PEZOLDT, J; AMBACHER, O et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 20, pp 6386-6434, issn 0022-3727, 49 p.Article

Impact of n-type doping on the terahertz surface emission from c-plane InNPOLYAKOV, V. M; CIMALLA, V; LEBEDEV, V et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 6, pp 1353-1355, issn 1862-6300, 3 p.Article

Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystalsKAYAMBAKI, M; TSAGARAKI, K; CIMALLA, V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 7, pp 2744-2748, issn 0013-4651Article

The deposition of aluminium nitride on silicon by plasma-enhanced metal-organic chemical vapour depositionSTAUDEN, T; EICHHORN, G; CIMALLA, V et al.Diamond and related materials. 1996, Vol 5, Num 10, pp 1210-1213, issn 0925-9635Article

Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor depositionWANG, Ch. Y; CIMALLA, V; ROMANUS, H et al.Thin solid films. 2007, Vol 515, Num 16, pp 6611-6614, issn 0040-6090, 4 p.Conference Paper

Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applicationsFÖRSTER, Ch; CIMALLA, V; LEBEDEV, V et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1829-1833, issn 1862-6300, 5 p.Conference Paper

Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experimentsDMOWSKI, L. H; DYBKO, K; AMBACHER, O et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1537-1540, issn 0370-1972, 4 p.Conference Paper

Investigations of MBE grown InN and the influence of sputtering on the surface compositionKRISCHOK, S; YANEV, V; LU, H et al.Surface science. 2004, Vol 566-68, pp 849-855, issn 0039-6028, 7 p., 2Conference Paper

Interpretation of Auger depth profiles of thin SiC layers on SiECKE, G; RÖSSLER, H; CIMALLA, V et al.Mikrochimica acta (1966. Print). 1997, Vol 125, Num 1-4, pp 219-222, issn 0026-3672Conference Paper

Oxidation behaviour of carbon monoxide at the photostimulated surface of ZnO nanowiresWANG, Ch Y; KINZER, M; YOUN, S. K et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 30, issn 0022-3727, 305302.1-305302.7Article

(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensorsWAGNER, J; WANG, Ch. Y; AMBACHER, O et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69100X.1-69100X.5, issn 0277-786X, isbn 978-0-8194-7085-0, 1VolConference Paper

Markers prepared by focus ion beam technique for nanopositioning proceduresROMANUS, H; SCHADEWALD, J; CIMALLA, V et al.Microelectronic engineering. 2007, Vol 84, Num 3, pp 524-527, issn 0167-9317, 4 p.Conference Paper

Electrical performance of gallium nitride nanocolumnsNIEBELSCHÜTZ, M; CIMALLA, V; AMBACHER, O et al.Physica. E, low-dimentional systems and nanostructures. 2007, Vol 37, Num 1-2, pp 200-203, issn 1386-9477, 4 p.Conference Paper

Transition energies and Stokes shift analysis for In-rich InGaN alloysSCHLEY, P; GOLDHAHN, R; SCHAFF, W. J et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1572-1576, issn 0370-1972, 5 p.Conference Paper

Growth of three-dimensional SiC clusters on Si modelled by KMCSCHMIDT, A. A; KHARLAMOV, V. S; SAFONOV, K. L et al.Computational materials science. 2005, Vol 33, Num 1-3, pp 375-381, issn 0927-0256, 7 p.Conference Paper

Kinetic Monte Carlo simulation of SiC nucleation on Si(111)SCHMIDT, A. A; SAFONOV, K. L; TRUSHIN, Yu. V et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 333-337, issn 0031-8965, 5 p.Conference Paper

Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)SiATTENBERGER, W; LINDNER, J; CIMALLA, V et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 544-548, issn 0921-5107Conference Paper

RTP : temperature monitoring by means of oxidationZÖLLNER, J.-P; CIMALLA, V; PEZOLDT, J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 23-28, issn 0022-3093Conference Paper

Determination of the composition of In_xGa_1-xN from strain measurementsMORALES, F. M; GONZALEZ, D; LOZANO, J. G et al.Acta materialia. 2009, Vol 57, Num 19, pp 5681-5692, issn 1359-6454, 12 p.Article

Nanowire-based electromechanical biomimetic sensorTONISCH, K; CIMALLA, V; WILL, F et al.Physica. E, low-dimentional systems and nanostructures. 2007, Vol 37, Num 1-2, pp 208-211, issn 1386-9477, 4 p.Conference Paper

Processing of novel SiC and group III-nitride based micro- and nanomechanical devicesFOERSTER, Ch; CIMALLA, V; BRUECKNER, K et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 4, pp 671-676, issn 0031-8965, 6 p.Conference Paper

SiC/Si and ain/si heterostructures for microelectromechanical RF sensorsFOERSTER, C. H; CIMALLA, V; LEBEDEV, V et al.International Semiconductor Conference. 2004, pp 371-374, isbn 0-7803-8499-7, 4 p.Conference Paper

Production and characterization of zinc oxide thin films for room temperature ozone sensingBENDER, M; GAGAOUDAKIS, E; MARTINS, R et al.Thin solid films. 2002, Vol 418, Num 1, pp 45-50, issn 0040-6090, 6 p.Conference Paper

Ozone sensing properties of polycrystalline indium oxide films at room temperatureKIRIAKIDIS, G; BENDER, M; KATSARAKIS, N et al.Physica status solidi. A. Applied research. 2001, Vol 185, Num 1, pp 27-332, issn 0031-8965Conference Paper

Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfacesWÖHNER, T; CIMALLA, V; STAUDEN, T et al.Thin solid films. 2000, Vol 364, Num 1-2, pp 28-32, issn 0040-6090Conference Paper