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BESONDERHEITEN DES ENTWURFS INTEGRIERTER MIS-SCHALTKREISE = PARTICULARITES DE LA CONCEPTION DES CIRCUITS INTEGRES MOSROESSLER F.1982; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1982; VOL. 31; NO 1; PP. 39-43Article

PROBLEMI CONNESSI ALLA VALUTAZIONE ED ALL' IMPIEGO DI CONTENITORI PLASTICI IN APPLICAZIONI A VITA UTILE MOLTO LUNGA. = PROBLEMES LIES A L'EVALUATION ET A EMPLOI DE CONTAINERS EN PLASTIQUE A DUREE DE VIE TRES LONGUEBASILE L; FANTINI F.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 324-332; BIBL. 54 REF.Article

ON MODELING OF THE SELF-ALIGNED FIELD IMPLANTED MOS DEVICES WITH NARROW WIDTHS.BANDALI MB; LO TC.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 573-576; BIBL. 2 REF.Conference Paper

FILTRES CAPACITIFS A COMMUTATIONSPOPOV VP.1974; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1974; VOL. 17; NO 9; PP. 36-42; BIBL. 7 REF.Article

CMOS INTEGRATED CIRCUIT RELIABILITYSCHNABLE GL; COMIZZOLI RB.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 1; PP. 33-50; BIBL. 145 REF.Article

M.O.S. DEVELOPMENTS.STRATH AB.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 6; PP. 38.Article

GRACE A L'IMPLANTATION IONIQUE ET A L'ELECTRON-LITHOGRAPHIE, IBM A REALISE UNE RAM DE 8 K BITS EN MOS AVEC ACCES EN 90 NS.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 214; PP. 7Article

CMOS OPTIMIZATION FOR RADIATION HARDNESS.DERBENWICK GF; FOSSUM JG.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 433-436; BIBL. 8 REF.Conference Paper

EIN HALBLEITERKOPPELBAUSTEIN FUER BREITBANDSIGNALE. = MATRICE DE COUPLAGE A SEMI-CONDUCTEUR POUR SIGNAUX A LARGE BANDERALL B.1975; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DTSCH.; DA. 1975; VOL. 48; NO 2-3; PP. 60-65; ABS. ANGL.; BIBL. 2 REF.Article

RECHNERGESTUETZTER TOPOGRAPHIE-ENTWURF FUER MOS-STANDARDZELLENSCHALTUNGEN MIT DEM PROGRAMMSYSTEM AVESTA. = CONCEPTION ASSISTEE PAR CALCULATION DE LA TOPOGRAPHIE POUR DES CIRCUITS A CELLULES NORMALISEES AVEC LE SYSTEME DE PROGRAMME AVESTAKOLLER K; LAUTHER U.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 1; PP. 8-12; ABS. ANGL.; BIBL. 5 REF.Article

ASPECTS PHYSIQUES DE LA FIABILITE DES BLOCS DE CIRCUITS INTEGRES A TRANSISTORS MOSKOSTYCHEV GI.1974; RADIOTEKHNIKA; S.S.S.R.; DA. 1974; VOL. 29; NO 8; PP. 76-80; BIBL. 6 REF.Article

MOS AREA SENSOR. II: LOW-NOISE MOS AREA SENSOR WITH ANTIBLOOMING PHOTODIODESOHBA S; NAKAI M; ANDO H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1682-1687; BIBL. 17 REF.Article

STATIC ESFI MOS (SOS) CELLS FOR HIGH-DENSITY MEMORIES.GOSER K; POMPER M.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 4; PP. 220-225; BIBL. 11 REF.Article

SPEICHERSCHALTUNGEN MIT MNOS-TRANSISTOREN. = CIRCUITS MEMOIRE A TRANSISTORS MNOSHORNINGER K.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 4; PP. 213-219; BIBL. 9 REF.Article

AN OPTIMIZED OUTPUT STAGE FOR MOS INTEGRATED CIRCUITS.HUNG CHANG LIN; LINHOLM LW.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 2; PP. 106-109Article

MOS AREA SENSOR. I: DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484 X 384 ELEMENT COLOR MOS IMAGERKOIKE N; TAKEMOTO I; SATOH K et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1676-1681; BIBL. 9 REF.Article

INTEGRATION VON FILTERN MIT LINEAREN MOS-SCHALTUNGEN = L'INTEGRATION DE FILTRES DANS LES CIRCUITS MOS LINEAIRESCHRISTIANSEN P; GEBHARDT PJ; KOHLBACHER G et al.1979; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DEU; DA. 1979; VOL. 52; NO 1-2; PP. 131-138; ABS. ENG; BIBL. 19 REF.Article

TEMPERATURE PARAMETERS OF P-TYPE SILICON HIGH VALUE RESISTORS.ILIEVA MN; PETROVA RS.1976; C.R. ACAD. BULG. SCI.; BULG.; DA. 1976; VOL. 29; NO 2; PP. 179-182; BIBL. 7 REF.Article

CONSIDER 1,024-BIT C-MOS RAMS FOR SMALL STATIC-MEMORY SYSTEMS.HUME S.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 15; PP. 102-106Article

FUNCTIONAL MODELLING OF NON-VOLATILE MOS MEMORY DEVICES FOR COMPUTER-AIDED DESIGN.CARD HC; ELMASRY MI.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 565-568; BIBL. 7 REF.Conference Paper

C-MOS SPECIFICATIONS: DON'T TAKE THEM FOR GRANTED.WALKER R.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 1; PP. 103-107Article

DRIVING LEDS DIRECTLY FROM C-MOS LOGIC OUTPUTS.PATTERSON CD.1974; ELECTRONICS; U.S.A.; DA. 1974; VOL. 47; NO 15; PP. 116Article

ANALYSIS OF HARMONIC DISTORTION IN SINGLE-CHANNEL MOS INTEGRATED CIRCUITSFONG E; ZEMAN R.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 1; PP. 83-86; BIBL. 8 REF.Article

MULGA - AN INTERACTIVE SYMBOLIC LAYOUT SYSTEM FOR THE DESIGN OF INTEGRATED CIRCUITSWESTE NHE.1981; BELL SYST. TECH. J.; ISSN 0005-8580; USA; DA. 1981; VOL. 60; NO 6; PART. 1; PP. 823-857; BIBL. 18 REF.Article

L'AFFIDABILITA DEI COMPONENTI A MOS DAL PUNTO DI VISTA DI UN UTILIZZATORE. = LA FIABILITE DES COMPOSANTS MOS DU POINT DE VUE D'UN UTILISATEURSALVINI A.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 318-324Article

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