Exploration of the inherent magnetoresistance in InSb thin filmsTONG ZHAN; HARRIS, J. J; BRANFORD, W. R et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1543-1546, issn 0268-1242, 4 p.Article

Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin filmsZHANG, T; HARRIS, J. J; CLOWES, S. K et al.Semiconductor science and technology. 2005, Vol 20, Num 12, pp 1153-1156, issn 0268-1242, 4 p.Article

Thickness dependence of Hall transport in Ni_1.15Mn_0.85Sb thin films on siliconBRANFORD, W. R; CLOWES, S. K; COHEN, L. F et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 201305.1-201305.4, issn 1098-0121Article

Phosphine adsorption and the production of phosphide phases on Cu(001)GONCHAROVA, L. V; CLOWES, S. K; FOGG, R. R et al.Surface science. 2002, Vol 515, Num 2-3, pp 553-566, issn 0039-6028Article

Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperaturesLEONTIADOU, M. A; LITVINENKO, K. L; CLOWES, S. K et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 3, issn 0953-8984, 035801.1-035801.5Article

Temperature and doping dependence of spin relaxation in n-InAsMURDIN, B. N; LITVINENKO, K; COHEN, L. F et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085346.1-085346.5, issn 1098-0121Article

The role of impurity band conduction in the low temperature characteristics of thin InSb films grown by molecular beam epitaxyHARRIS, J. J; ZHANG, T; BRANFORD, W. R et al.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1406-1410, issn 0268-1242, 5 p.Article