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CONTROLLED BARRIER HEIGHT INP SCHOTTKY DIODES PREPARED BY SULFUR DIFFUSION.COLEMAN JJ.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 4; PP. 283-285; BIBL. 15 REF.Article

ARSENIC AND GALLIUM DISTRIBUTION COEFFICIENTS IN LIQUID-PHASE EPITAXIAL GAXIN1-X1PYAS1-Y.COLEMAN JJ.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 6; PP. 388-390; BIBL. 25 REF.Article

WASTE WATER HEAT RECLAMATION = RECUPERATION DE LA CHALEUR DES EAUX USEESCOLEMAN JJ.1974; A.S.H.R.A.E. TRANS.; U.S.A.; DA. 1974; VOL. 80; PART-1; PP. 370-384; (ASHRAE SEMIANNU. MEET. PROC.; LOS ANGELES, CALIF.; 1974)Conference Paper

SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERSCOLEMAN JJ; DAPKUS PD.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 3; PP. 262-263; BIBL. 17 REF.Article

COMPUTER-FLAVORED CIRCUIT THEORY-REVISITED.MIRCHANDANI G; COLEMAN JJ.1977; I.E.E.E. TRANS. EDUC.; U.S.A.; DA. 1977; VOL. 20; NO 1; PP. 40-44; BIBL. 16 REF.Article

A NEW METHOD OF FABRICATING GALLIUM ARSENIDE MOS DEVICES.CHANG RPH; COLEMAN JJ.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 5; PP. 332-333; BIBL. 9 REF.Article

ZINC CONTAMINATION AND MISPLACED P-N JUNCTIONS IN INP-GALNPAS D.H. LASERSCOLEMAN JJ; NASH FR.1978; ELECTRON LETTERS; GBR; DA. 1978; VOL. 14; NO 17; PP. 558-559; BIBL. 15 REF.Article

MELT REMOVAL AND PLANAR GROWTH OF IN1-XGAXP1-ZASZ HETEROJUNCTIONS.COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 7; PP. 363-365; BIBL. 15 REF.Article

INFORMATION INTEGRATION AND COMPOUNDING OF DISCRIMINATIVE STIMULI IN PIGEONSGRIFFIN P; HUGHES WR; COLEMAN JJ et al.1975; PERCEPT. AND PSYCHOPHYS.; U.S.A.; DA. 1975; VOL. 17; NO 5; PP. 555-558; BIBL. 12REFArticle

PLATYSMA MUSCULOCUTANEOUS FLAP: CLINICAL AND ANATOMIC CONSIDERATIONS IN HEAD AND NECK RECONSTRUCTIONCOLEMAN JJ III; NAHAI F; MATHES SJ et al.1982; AM. J. SURG.; ISSN 0002-9610; USA; DA. 1982; VOL. 144; NO 4; PP. 477-481; BIBL. 5 REF.Article

LIMITATIONS OF THE DIRECT-INDIRECT TRANSITION ON IN1-X GAXP1-ZASZ IN1-XGAXP1-ZASZ HETEROJONCTIONS.HOLONYAK N JR; CHIN R; COLEMAN JJ et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 2; PP. 635-638; BIBL. 21 REF.Article

CONTROLLED ZN DIFFUSION FOR LOW THRESHOLD NARROW STRIPE GA ALAS/GAAS DH LASERSHONG CS; LIU YZ; DAPKUS PD et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 225-227; BIBL. 8 REF.Article

THE EFFECT OF INTERFACE ARSENIC DOMAINS ON THE ELECTRICAL PROPERTIES OF GAAS MOS STRUCTURES.CHANG RPH; SHENG TT; CHANG CC et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 4; PP. 341-342; BIBL. 12 REF.Article

LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'/IN1-XGAXP1-ZASZ/IN1-X' GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER DIODES (J<104 A/CM2, LAMBDA EQUIV. A 5850 A, 77OK).HITCHENS WR; HOLONYAK N JR; WRIGHT PD et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 245-247; BIBL. 14 REF.Article

RESTAGING LAPAROTOMY FOR HODGKIN'S DISEASE = REEVALUATION DU STADE PAR LAPAROTOMIE DANS LA MALADIE DE HODGKINCOKER DD; MORRIS DM; COLEMAN JJ et al.1983; ANNALS OF SURGERY; ISSN 0003-4932; USA; DA. 1983; VOL. 197; NO 1; PP. 79-83; ABS. ENG; BIBL. 6 REF.; GRAPHArticle

APPLICATION OF SELECTIVE CHEMICAL REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAASCHANG RPH; COLEMAN JJ; POLAK AJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 237-238; BIBL. 8 REF.Article

YELLOW IN1-XGAXP1-ZASZ DOUBLE-HETEROJUNCTION LASERS.COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 2015-2019; BIBL. 20 REF.Article

ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPERLATTICE ALONG ITS LAYERSKIRCHOEFER SW; HOLONYAK N JR; COLEMAN JJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 766-768; BIBL. 10 REF.Article

BE DOPING OF LIQUID-PHASE-EPITAXIAL INPABRAMS EB; SUMSKI S; BONNER WA et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4469-4470; BIBL. 17 REF.Article

HIGH EFFICIENCY, LOW-THRESHOLD, ZN-DIFFUSED NARROW STRIPE GAAS GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONHONG CS; COLEMAN JJ; DAPKUS PD et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 208-210; BIBL. 10 REF.Article

INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURESLAIDIG WD; HOLONYAK N JR; COLEMAN JJ et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 1-20; BIBL. 18 REF.Article

DEVICE-QUALITY EPITAXIAL ALAS BY METALORGANIC-CHEMICAL VAPOR DEPOSITIONCOLEMAN JJ; DAPKUS PD; HOLONYAK N JR et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 894-896; BIBL. 19 REF.Article

GUNN OSCILLATION IN GAAS OPTICALLY TRIGGERED BY 1.06 MU M RADIATIONCHIN R; NAKANO K; COLEMAN JJ et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 10; PP. 248-249; BIBL. 5 REF.Article

DIRECT STUDY OF THE NATURE OF NITROGEN BOUND STATES IN GAAS1-XPX: N.KLEIMAN GG; NELSON RJ; HOLONYAK N et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 6; PP. 375-378; BIBL. DISSEM.Article

DISORDER OF AN ALAS-GAAS SUPERLATTICE BY IMPURITY DIFFUSIONLAIDIG WD; HOLONYAK N JR; CAMRAS MD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 776-778; BIBL. 13 REF.Article

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