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EMITTER-COLLECTOR BREAKDOWN VOLTAGE BV_CEO VERSUS GAIN H_FE FOR VARIOUS N-P-N COLLECTOR DOPING LEVELSROULSTON DJ; DEPEY M.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 21; PP. 803-805; BIBL. 5 REF.Article

EFFECTS OF VARYING BASE AND COLLECTOR DOPING ON HIGH CURRENT BEHAVIOUR IN BIPOLAR EPITAXIAL TRANSISTORS.THOMAS RE; SAYEED KH.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 2; PP. 121-140; BIBL. 18 REF.Article

PREDICTION OF FT AND HFE AT HIGH COLLECTOR CURRENTS.RAKESH KUMAR; HUNTER LP.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1031-1037; BIBL. 13 REF.Article

LEAKAGE AND H_FE DEGRADATION IN MICROWAVE BIPOLAR TRANSISTORS.WANG ACM; KAKIHANA S.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 667-674; BIBL. 10 REF.Article

COLLECTOR CAPACITANCE AND HIGH-LEVEL INJECTION EFFECTS IN BIPOLAR TRANSISTORS.RAKESH KUMAR; HUNTER LP.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 51-60; BIBL. 17 REF.Article

HIGH CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONSBOWLER DL; LINDHOLM FA.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 257-263; BIBL. 18 REF.Serial Issue

Graded collector heterojunction bipolar transistorCHIU, L. C; HARDER, C; MARGALIT, S et al.Applied physics letters. 1984, Vol 44, Num 1, pp 105-106, issn 0003-6951Article

Recovery mechanism of lattice defects formed in the collector region for electron-irradiated npn Si transistorsOHYAMA, H; NEMOTO, K.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 677-686, issn 0031-8965Article

COMPARISON OF VARIOUS SOURCE GATE GEOMETRIES FOR POWER MOSFET'SHOWER PL; GEISLER MJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1098-1101; BIBL. 1 REF.Article

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Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shortsCHOW, T. P; BALIGA, B. J; PATTANAYAK, D. N et al.IEEE electron device letters. 1990, Vol 11, Num 5, pp 184-186, issn 0741-3106, 3 p.Article

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