The effect of scattering centers on resonant tunneling in double barrier heterostructuresBENYUAN, G; COLUZZA, C; MANGIANTINI, M et al.Superlattices and microstructures. 1989, Vol 6, Num 2, pp 153-156, issn 0749-6036, 4 p.Article

N-CDS/P-SI HETEROJUNCTION SOLAR CELLSCOLUZZA C; GAROZZO M; MALETTA G et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 569-572; BIBL. 11 REF.Article

Resonant tunneling via localized states in the photocurrent yield of Pd/amorphous silicon Schottky barriersCOLUZZA, C; BENYUAN, GU; MANGIANTINI, M et al.Superlattices and microstructures. 1989, Vol 6, Num 3, pp 265-269, issn 0749-6036Article

Effect of ohmic contact conductance on the distribution of surface and bulk currents in semiconductor planar devicesCHONG-RU HUO; BEN-YUAN GU; COLUZZA, C et al.Journal of applied physics. 1992, Vol 72, Num 4, pp 1473-1477, issn 0021-8979Article

Scattering effects on resonant tunneling in double-barrier heterostructuresGU, B; COLUZZA, C; MANGIANTINI, M et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3510-3514, issn 0021-8979Article

Band bending at semiconductor interfaces and its effect on photoemission line shapesMARGARITONDO, G; GOZZO, F; COLUZZA, C et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 15, pp 9907-9909, issn 0163-1829Article

Intrinsic and extrinsic charge neutrality levels in semiconductors : an empirical approachGOZZO, F; COLUZZA, C; MARGARITONDO, G et al.Solid state communications. 1992, Vol 81, Num 7, pp 553-556, issn 0038-1098Article

Analysis of mechanism for resonant tunneling via localized states in thin SiO₂ filmsGU, B; MANGIANTINI, M; COLUZZA, C et al.Journal of applied physics. 1988, Vol 64, Num 12, pp 6867-6870, issn 0021-8979Article

Near-field imaging of the photocurrent on a patterned Au/GaAs interface with various wavelengths and biasDAVY, S; SPAJER, M; ALMEIDA, J et al.EPJ. Applied physics (Print). 1999, Vol 5, Num 3, pp 283-288, issn 1286-0042Article

Creation of radiative hydrogen-related states within strained In_xGa_1-xAs/GaAs quantum wells by hydrogenationSOBIESIERSKI, Z; WOOLF, D. A; WESTWOOD, D. I et al.Solid state communications. 1992, Vol 81, Num 1, pp 125-128, issn 0038-1098Article

Electroreflectance and photoluminescence measurement of passivation by hydrogenation in GaAs/AlGaAs structuresYANG, D; GARLAND, J. W; RACCAH, P. M et al.Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 557-560, issn 0921-4526, 4 p.Conference Paper

Palladium L₃ absorption edge of PdH_0.6 films: evidence for hydrogen induced unoccupied states = Seuil d'absorption L₃ du palladium de couches de PdH_0,6: mise en évidence d'états inoccupés induits par l'hydrogèneDAVOLI, I; MARCELLI, A; FORTUNATO, G et al.Solid state communications. 1989, Vol 71, Num 5, pp 383-390, issn 0038-1098Article

Dipole-induced changes of the band discontinuities at the SiO₂-Si interfacePERFETTI, P; QUARESIMA, C; COLUZZA, C et al.Physical review letters. 1986, Vol 57, Num 16, pp 2065-2068, issn 0031-9007Article

Dual-ion-beam sputtering technique for the production of hydrogenated amorphous siliconSCAGLIONE, S; COLUZZA, C; DELLA SALA, D et al.Thin solid films. 1984, Vol 120, Num 3, pp 215-222, issn 0040-6090Article

Surface analyses of In-V oxide films aged electrochemically by Li insertion reactionsCOLUZZA, C; CIMINO, N; DECKER, F et al.PCCP. Physical chemistry chemical physics (Print). 2003, Vol 5, Num 24, pp 5489-5498, issn 1463-9076, 10 p.Article

Current rectification through a single-barrier resonant tunneling quantum structurePAPP, G; DI VENTRA, M; COLUZZA, C et al.Superlattices and microstructures. 1995, Vol 17, Num 3, pp 273-275, issn 0749-6036Article

Realistic cluster approach for interpreting the valence band structure of phosphorus oxyanionsCSERNY, I; KOVER, L; NEMETHY, A et al.Surface and interface analysis. 1995, Vol 23, Num 7-8, pp 477-483, issn 0142-2421Article

Aluminium in rat cerebellar neural culturesDE STASIO, G; DUNHAM, D; TONNER, B. P et al.Neuroreport (Oxford). 1993, Vol 4, Num 10, pp 1175-1178, issn 0959-4965Article

Photoemission spectromicroscopy : a new insight in the chemistry of SnO_x films for gas sensorsSANJINES, R; COLUZZA, C; ROSENFELD, D et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3997-4003, issn 0021-8979Article

Internally detected electron photoexcitation spectroscopy on heterostructuresCOLUZZA, C; NEGLIA, A; BENNOUNA, A et al.Applied surface science. 1992, Vol 56-58, pp 733-737, issn 0169-4332, bConference Paper

Dipole-induced changes of the band discontinuities at the SiO₂-Si interfacePERFETTI, P; QUARESIMA, C; COLUZZA, C et al.Physical review letters. 1986, Vol 57, Num 16, pp 2065-2068, issn 0031-9007Article

Spectroscopic laser scanning analysis of photo-induced current on a-Si solar cellsTAKAKURA, H; FUJIMOTO, K; OKUDA, K et al.Japanese journal of applied physics. 1983, Vol 22, Num 4, pp 569-574, issn 0021-4922Article

Ellipsometric and XPS analysis of the interface between silver and SiO₂, TiO₂ and SiN_x thin filmsMASETTI, E; BULIR, J; GAGLIARDI, S et al.Thin solid films. 2004, Vol 455-56, pp 468-472, issn 0040-6090, 5 p.Conference Paper

A study of physical properties and gas-surface interaction of vanadium oxide thin filmsRELLA, R; SICILIANO, P; CRICENTI, A et al.Thin solid films. 1999, Vol 349, Num 1-2, pp 254-259, issn 0040-6090Article

Ballistic-electron emission and secondary photoelectron microscopy of the sulfur-passivated Pt-GaP(001) interfaceALMEIDA, J; MARGARITONDO, G; RIGHINI, M et al.Surface science. 1998, Vol 402-04, pp 470-474, issn 0039-6028Conference Paper